公开(公告)号：WO2019042783A1

公开(公告)日：2019-03-07

申请号：PCT/EP2018/072237

申请日：2018-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： BARBU, Ioana, Sorina ,  BOZKURT, Murat ,  VAN DER SCHAAR, Maurits ,  DA COSTA ASSAFRAO, Alberto

IPC: G03F7/20

Abstract: Multilayered product structures are formed on substrates by a combination of patterning steps, physical processing steps and chemical processing steps. An inspection apparatus illuminates a plurality of target structures and captures pupil images (802) representing the angular distribution of radiation scattered by each target structure. The target structures have the same design but are formed at different locations on a substrate and/or on different substrates. Based on a comparison (810) of the images the inspection apparatus infers the presence of process-induced stack variations between said different locations. In one application, the inspection apparatus separately measures overlay performance (OV) of the manufacturing process based on dark-field images (840), combined with previously determined calibration information (842a, 842b). The calibration is adjusted for each target, depending on the stack variations inferred from the pupil images.

公开(公告)号：WO2018114206A1

公开(公告)日：2018-06-28

申请号：PCT/EP2017/080190

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： HUIJGEN, Ralph, Timotheus ,  KEA, Marc, Jurian ,  VAN KESSEL, Marcel, Theodorus, Maria ,  ISHIBASHI, Masashi ,  FAN, Chi-Hsiang ,  CEKLI, Hakki, Ergun ,  ZHANG, Youping ,  VAN DER SCHAAR, Maurits ,  REN, Liping

IPC: G03F9/00 ,  G03F7/20

Abstract: The present invention provides a method, system and program for determining a position of a feature referenced to a substrate. The method comprises measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate comprising the feature, or another layer of the substrate, or another layer of another substrate. The present invention also provides a method, system and program for controlling positioning of a substrate.

公开(公告)号：WO2017102327A1

公开(公告)日：2017-06-22

申请号：PCT/EP2016/079219

申请日：2016-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  ZHANG, Youping ,  DEN BOEF, Arie, Jeffrey ,  XIAO, Feng ,  EBERT, Martin

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G01N21/956

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

Abstract translation: 一种方法包括将照射的照射束投射到衬底上的度量目标上，检测从衬底上的度量目标反射的辐射，并且基于检测到的确定衬底上的特征的特征 辐射，其中检测到的辐射的偏振状态被可控地选择以优化检测到的辐射的质量。

公开(公告)号：WO2016162228A1

公开(公告)日：2016-10-13

申请号：PCT/EP2016/056662

申请日：2016-03-24

Applicant: ASML NETHERLANDS B.V.

Inventor： WILLEMS, Lotte, Marloes ,  BHATTACHARYYA, Kaustuve ,  BINTEVINOS, Panagiotis, Pieter ,  CHEN, Guangqing ,  EBERT, Martin ,  KNELISSEN, Pieter, Jacob, Mathias, Hendrik ,  MORGAN, Stephen ,  VAN DER SCHAAR, Maurits ,  VERSTAPPEN, Leonardus, Henricus, Marie ,  WANG, Jen-Shiang ,  WARDENIER, Peter, Hanzen

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046 ,  G06F2217/16

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Abstract translation: 一种方法，包括执行模拟以评估用于测量度量目标的多个度量目标和/或多个计量学方案，从所评估的多个度量目标和/或计量学中识别一个或多个测量目标和/或计量配方 接收所述一个或多个识别的度量目标和/或度量配方的测量数据，以及使用所述测量数据来调整度量目标参数或度量配方参数。

公开(公告)号：WO2011003736A1

公开(公告)日：2011-01-13

申请号：PCT/EP2010/058877

申请日：2010-06-23

Applicant: ASML NETHERLANDS B.V. ,  VAN DER HEIJDEN, Rob ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits

Inventor： VAN DER HEIJDEN, Rob ,  VAN HAREN, Richard ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70466 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70683 ,  G03F9/7076

Abstract: A method for providing temporary measurement targets during a multiple patterning process which can be removed in the completion of the process. The metrology target is defined in either the first or the second exposure of a multiple exposure process and whether or not it is temporary or made permanent is selected according to whether or not the area of the target is covered or cleared out in the other exposure. The use of temporary targets reduces the amount of space on the substrate that must be devoted to targets.

Abstract translation: 一种用于在多次图案化处理期间提供临时测量目标的方法，其可以在完成该过程时被去除。 计量目标是在多次曝光过程的第一次曝光或第二次曝光中定义的，以及根据目标的区域是否在另一曝光中被覆盖或清除而选择是临时还是永久性。 临时目标的使用减少了必须用于目标的基板上的空间。

公开(公告)号：WO2010031510A1

公开(公告)日：2010-03-25

申请号：PCT/EP2009/006518

申请日：2009-09-08

Applicant: ASML NETHERLANDS B.V. ,  BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie ,  VAN DE KERKHOF, Marcus ,  VAN DER SCHAAR, Maurits

Inventor： BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie ,  VAN DE KERKHOF, Marcus ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70625

Abstract: The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.

Abstract translation: 本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。 在本实施例中，作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。 在投影仪的光瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，衬底上的结构的临界尺寸或重叠相关。

公开(公告)号：WO2010025793A1

公开(公告)日：2010-03-11

申请号：PCT/EP2009/005419

申请日：2009-07-27

Applicant: ASML Netherlands B.V. ,  VAN DE KERKHOF, Marcus, Adrianus ,  VAN DER SCHAAR, Maurits ,  SMILDE, Hendrik, Jan, Hidde

Inventor： VAN DE KERKHOF, Marcus, Adrianus ,  VAN DER SCHAAR, Maurits ,  SMILDE, Hendrik, Jan, Hidde

IPC: G03F7/20

CPC classification number: G01N21/9501 ,  G01N21/4738 ,  G01N2201/06113 ,  G01N2201/10 ,  G02B5/1823 ,  G02B5/1861 ,  G03F7/70058 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/70 ,  G03F9/7046 ,  G03F9/7076 ,  H01L23/544 ,  H01L2924/0002 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Scatterometry for measuring overlay. A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.

Abstract translation: 用于测量覆盖层的散射测量。 第二组叠加的光栅叠加在第一组叠加的光栅上。 第二组光栅具有与第一组光栅不同的周期性或不同的取向。 因此，来自第二组叠加光栅的一阶衍射图案可以与来自第一组叠加光栅的一阶衍射图案区分开。

公开(公告)号：WO2009150089A1

公开(公告)日：2009-12-17

申请号：PCT/EP2009/056844

申请日：2009-06-04

Applicant: ASML NETHERLANDS B.V. ,  FUCHS, Andreas ,  VAN DER SCHAAR, Maurits

Inventor： FUCHS, Andreas ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (-d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation. Further, a module is configured to determine an overlay value for each first target based on at least the obtained asymmetry value and the predetermined offsets and determine a polynomial fit across a plurality of first targets of a corresponding plurality of fields of the substrate for a relationship between the obtained asymmetry value and determined overlay value of each first target.

Abstract translation: 一种装置测量分成多个场的衬底的性质，例如重叠误差。 该装置包括被配置为将辐射引导到衬底的每个场的第一靶上的辐射源。 每个第一目标（T4G）具有至少第一光栅和具有相应预定偏移的第二光栅，第一光栅的预定偏移（+ d）在与第二光栅的预定偏移（-d）相反的方向上。 检测器被配置为检测从每个第一目标反射的辐射，并且从检测到的辐射获得每个第一目标的不对称值。 此外，模块被配置为基于至少所获得的不对称值和预定偏移量来确定每个第一目标的覆盖值，并且确定跨越衬底的相应多个场的多个第一目标的多项式拟合，以获得关系 在获得的不对称值和确定的每个第一目标的覆盖值之间。

公开(公告)号：WO2021224009A1

公开(公告)日：2021-11-11

申请号：PCT/EP2021/060403

申请日：2021-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： ZWIER, Olger, Victor ,  VAN DER SCHAAR, Maurits ,  BOS, Hilko, Dirk ,  VAN DER LAAN, Hans ,  AL ARIF, S. M. Masudur Rahman ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CALADO, Victor, Emanuel ,  BHATTACHARYYA, Kaustuve ,  LIAN, Jin ,  GOORDEN, Sebastianus, Adrianus ,  LIM, Hui Quan

IPC: G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

公开(公告)号：WO2020025231A1

公开(公告)日：2020-02-06

申请号：PCT/EP2019/067533

申请日：2019-07-01

Applicant: STICHTING VU ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  UNIVERSITEIT VAN AMSTERDAM ,  ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  WARNAAR, Patrick ,  TENNER, Vasco, Tomas ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.