公开(公告)号：WO2021005067A1

公开(公告)日：2021-01-14

申请号：PCT/EP2020/069139

申请日：2020-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： JAVAHERI, Narjes ,  VAN DER SCHAAR, Maurits ,  CHANG, Tieh-Ming ,  BOS, Hilko, Dirk ,  WARNAAR, Patrick ,  BAHRAMI, Samira ,  HAJIAHMADI, Mohammadreza ,  TARABRIN, Sergey ,  SEMKIV, Mykhailo

IPC: G03F7/20 ,  G01B11/06

Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.

公开(公告)号：WO2020115125A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/083666

申请日：2019-12-04

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZWIER, Olger, Victor ,  WARNAAR, Patrick

IPC: G03F7/20 ,  G01N21/17 ,  G01N21/47 ,  H01L21/66

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

公开(公告)号：WO2020074412A1

公开(公告)日：2020-04-16

申请号：PCT/EP2019/077016

申请日：2019-10-07

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHOU, Zili ,  PANDEY, Nitesh ,  ZWIER, Olger, Victor ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  MC NAMARA, Elliott, Gerard ,  DEN BOEF, Arie, Jeffrey ,  HINNEN, Paul, Christiaan ,  BOZKURT, Murat ,  OTTENS, Joost, Jeroen ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：WO2019029933A1

公开(公告)日：2019-02-14

申请号：PCT/EP2018/068786

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  TINNEMANS, Patricius, Aloysius Jacobus ,  GRZELA, Grzegorz ,  MOS, Everhardus, Cornelis ,  TEL, Wim, Tjibbo ,  JOCHEMSEN, Marinus ,  SEGERS, Bart, Peter, Bert ,  STAALS, Frank

IPC: G03F7/20

Abstract: A method, includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distributions for use in design, control or modification of the patterning process.

公开(公告)号：WO2018108527A1

公开(公告)日：2018-06-21

申请号：PCT/EP2017/080770

申请日：2017-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  GRZELA, Grzegorz ,  KOOP, Erik, Johan ,  CALADO, Victor, Emanuel ,  ZENG, Si-Han

IPC: G03F7/20

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured W t times, where W t is an integer greater than 2 so as to obtain N*W t measurement values; and determining R property values using Q equations and the N*W t measurement values, where R t ; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.

公开(公告)号：WO2016169901A1

公开(公告)日：2016-10-27

申请号：PCT/EP2016/058582

申请日：2016-04-18

Applicant: ASML NETHERLANDS B.V.

Inventor： ZENG, Si-Han ,  PENG, Yue-Lin ,  FANG, Jen-Yu ,  DEN BOEF, Arie, Jeffrey ,  STRAAIJER, Alexander ,  HUNG, Ching-Yi ,  WARNAAR, Patrick

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

Abstract translation: 公开了用于测量光刻工艺的参数的方法，计算机程序和相关联的装置。 该方法包括以下步骤：获得包括与多个第一结构相关的结构不对称性的测量的第一测量，所述多个测量结构不对称中的每一个对应于测量辐射的不同测量组合和至少第一参数的值 ; 获得与多个目标相关的目标不对称性的多个第二测量值，所述多个测量目标不对称中的每一个对应于所述不同测量组合之一，确定描述所述第一测量和所述第二测量之间的关系的关系函数， 对于每个所述测量组合; 根据所述关系函数确定校正的重叠值，所述校正重叠值由于至少所述第一结构中的结构不对称而被校正为结构贡献。

公开(公告)号：WO2016005167A1

公开(公告)日：2016-01-14

申请号：PCT/EP2015/063828

申请日：2015-06-19

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Amandev ,  PELLEMANS, Henricus, Petrus, Maria ,  WARNAAR, Patrick

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01J3/2823 ,  G01J3/45 ,  G01N21/4788 ,  G01N2201/06113 ,  G03F7/70625 ,  G03F7/70633

Abstract: Inspection apparatus (100) is used for measuring parameters of targets on a substrate. Coherent radiation follows an illumination path (solid rays) for illuminating target (T). A collection path (dashed rays) collects diffracted radiation from the target and delivers it to a lock-in image detector (112). A reference beam following a reference path (dotted rays). An acousto-optical modulator (108) shifts the optical frequency of the reference beam so that the intensity of radiation at the lock-in detector includes a time-varying component having a characteristic frequency corresponding to a difference between the frequencies of the diffracted radiation and the reference radiation. The lock-in image detector records two-dimensional image information representing both amplitude and phase of the time-varying component. A second reference beam with a different shift (110) follows a second reference path (dot-dash rays). Interference between the two reference beams can be used for intensity normalization.

Abstract translation: 检查装置（100）用于测量基板上的目标的参数。 相干辐射遵循用于照射目标（T）的照明路径（固体光线）。 收集路径（虚线）从目标物体收集衍射辐射并将其传送到锁定图像检测器（112）。 参考光束遵循参考路径（虚线）。 声光调制器（108）移动参考光束的光频率，使得锁定检测器处的​​辐射强度包括具有与衍射辐射的频率之间的差异相对应的特征频率的时变分量，以及 参考辐射。 锁定图像检测器记录表示时变分量的幅度和相位的二维图像信息。 具有不同偏移（110）的第二参考光束遵循第二参考路径（点划线）。 两个参考光束之间的干涉可用于强度归一化。

公开(公告)号：WO2013026598A1

公开(公告)日：2013-02-28

申请号：PCT/EP2012/062555

申请日：2012-06-28

Applicant: ASML NETHERLANDS B.V. ,  WARNAAR, Patrick ,  VAN SCHIJNDEL, Mark ,  KUBIS, Michael

Inventor： WARNAAR, Patrick ,  VAN SCHIJNDEL, Mark ,  KUBIS, Michael

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F1/44 ,  G03F7/70683

Abstract: A target structure including one or more periodic structures is formed on a substrate by a lithographic process. A image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from at least one region of interest within the image are used to determine a property of the periodic structure, for example asymmetry or overlay. To locate the ROI, a processing unit recognizes locations of a plurality of boundary features in the image of the target structure. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the ROI is greater than by recognizing only the boundaries of the periodic structure(s). The boundary features can be created by providing interruptions in a boundary region of the periodic structure. Regions of interest can be located in X and Y directions simultaneously, and with diffraction in X and Y directions simultaneously.

Abstract translation: 通过光刻工艺在衬底上形成包括一个或多个周期结构的靶结构。 在用辐射束照射目标结构的同时检测目标结构的图像，该图像使用非零次衍射辐射的第一部分形成，同时排除零级衍射辐射。 使用从图像内的至少一个感兴趣区域提取的强度值来确定周期性结构的属性，例如不对称或覆盖。 为了定位ROI，处理单元识别目标结构的图像中的多个边界特征的位置。 每个方向上边界特征的数量至少是目标结构内周期性结构边界数量的两倍。 定位ROI的准确性大于仅识别周期性结构的边界。 可以通过在周期性结构的边界区域中提供中断来创建边界特征。 感兴趣区域可以同时位于X和Y方向，同时在X和Y方向衍射。

公开(公告)号：WO2009072881A1

公开(公告)日：2009-06-11

申请号：PCT/NL2008/050770

申请日：2008-12-05

Applicant: ASML Netherlands B.V. ,  VAN HAREN, Richard Johannes Franciscus ,  LALBAHADOERSING, Sanjaysingh ,  MUSA, Sami ,  WARNAAR, Patrick ,  DOYTCHEVA,, Maya Angelova

Inventor： VAN HAREN, Richard Johannes Franciscus ,  LALBAHADOERSING, Sanjaysingh ,  MUSA, Sami ,  WARNAAR, Patrick ,  DOYTCHEVA,, Maya Angelova

IPC: G03F9/00

CPC classification number: G03F9/7065 ,  G03F7/20 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  Y10T428/24909

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract translation: 本发明涉及一种用于基板的光学取向并在其上提供的标记结构。 标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。 第一级和第二级之间的间隔确定相位深度条件。 标记结构还具有另外的结构。 布置该附加结构以在标记结构的制造期间改变分离。 本发明还涉及形成这种标记结构的方法。

公开(公告)号：EP3462240A1

公开(公告)日：2019-04-03

申请号：EP17193430.0

申请日：2017-09-27

Applicant: ASML Netherlands B.V.

Inventor： TEL, Wim, Tjibbo ,  WARNAAR, Patrick ,  MASLOW, Mark, John ,  SLACHTER, Abraham ,  VAN INGEN SCHENAU, Koenraad

IPC: G03F7/20

Abstract: Disclosed herein is a method in the manufacturing process of a device on a substrate, wherein the manufacturing process comprises a lithographic process of imaging a portion of a design layout onto the substrate using a lithographic apparatus and one or more further processes in the manufacturing process of the device, the method comprising: obtaining an image of at least part of the substrate, wherein the image comprises at least one feature comprised by the device being manufactured on the substrate; calculating one or more image-related metrics in dependence on a contour determined from the image comprising the at least one feature; determining one or more control parameters of the lithographic apparatus and/or said one or more further processes in the manufacturing process of the device in dependence on the one or more image-related metrics. Advantageously, the determination of the control parameters is improved.