公开(公告)号：JP2013070037A

公开(公告)日：2013-04-18

申请号：JP2012180057

申请日：2012-08-15

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LAFARRE RAYMOND WILHELMUS LOUIS ,  DE GRAAF ROELOF FREDERIK ,  ROSET NIEK JACOBUS JOHANNES ,  MARTENS ARJAN HUBRECHT JOSEF ANNA ,  ALEXANDER NIKOLOV ZDRAVKOV ,  KORNELIS TIJMEN HOEKERD ,  DZIOMKINA NINA VLADIMIROVNA

IPC: H01L21/027

CPC classification number: G03F7/2041 ,  B08B1/00 ,  B08B3/04 ,  B08B7/0028 ,  B08B7/0035 ,  B32B3/02 ,  B32B2432/00 ,  G03F7/70341 ,  G03F7/70908 ,  G03F7/70925 ,  Y10T428/24355 ,  Y10T428/24752

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus that reduces degradation of a seal between a cover and an object, such as a substrate, and/or a table, such as a substrate table.SOLUTION: Provided is a method and apparatus to clean a cover to seal a gap between an object located in a recess and the upper surface of a table outside of the recess. In-line and off-line arrangements are disclosed. Cleaning can be carried out using abrasion, UV radiation or flushing with a cleaning fluid, for example.

Abstract translation: 要解决的问题：提供减少盖和诸如基板的物体和/或诸如基板台之间的密封件的劣化的方法和装置。 解决方案：提供一种清洁盖子以密封位于凹部中的物体与凹部外面的台面上表面之间的间隙的方法和装置。 公开了在线和离线布置。 例如，可以使用磨损，UV辐射或用清洗液冲洗来进行清洁。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012023371A

公开(公告)日：2012-02-02

申请号：JP2011152418

申请日：2011-07-11

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LAURENT THIBAUD SIMON MATTHEW ,  GERARDUS ADRIANUS ANTONIUS MARIA KUSTERS ,  KNARREN BASTIAAN ANDREAS WILHELMUS HUBERTUS ,  LAFARRE RAYMOND WILHELMUS LOUIS ,  STEFFENS KOEN ,  KANEKO TAKESHI ,  ROBERT YAN VOGT ,  GREGORY MARTIN MASON CORCORAN ,  BROOKS ROOT HENDRICKS MARTINUS ,  KUNEN JOHANN GERTRUDIX CORNELIS ,  BUDDY RAMIN

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/683

CPC classification number: G03F7/70775 ,  G03F7/70341 ,  G03F7/70483 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70875

Abstract: PROBLEM TO BE SOLVED: To provide a substrate table that can reduce or eliminate the effects of a thermal load in order to avoid deformation (e.g., expansion or contraction) of a substrate and/or substrate table.SOLUTION: There is provided a substrate table to support a substrate on a substrate supporting area, the substrate table having a heat transfer fluid channel at least under the substrate supporting area, and a plurality of heaters and/or coolers to thermally control the heat transfer fluid in the channel at a location under the substrate supporting area.

Abstract translation: 要解决的问题：提供可以减少或消除热负荷的影响的衬底台，以避免衬底和/或衬底台的变形（例如，膨胀或收缩）。 解决方案：提供了一种用于在基板支撑区域上支撑基板的基板台，该基板台具有至少在基板支撑区域下方的传热流体通道，以及用于热控制的多个加热器和/或冷却器 在衬底支撑区域下方的通道中的传热流体。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011192994A

公开(公告)日：2011-09-29

申请号：JP2011050955

申请日：2011-03-09

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： ROSET NIEK JACOBUS JOHANNES ,  KATE NICOLAAS TEN ,  SERGEI SHULEPOV ,  LAFARRE RAYMOND WILHELMUS LOUIS

IPC: H01L21/027

CPC classification number: G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a system which reduces defects by improving stability of a meniscus of immersion exposure. SOLUTION: The lithographic apparatus includes a fluid handling structure configured such that a space adjoining a substrate table and/or an upper-part surface of a substrate arranged in a recess of the substrate table includes immersion fluid, a cover 25 including a plane-shaped body extending around the substrate from the upper-part surface to a peripheral part of an upper-part principal surface of the substrate so as to cover a gap between an edge of the recess and an edge of the substrate during use, and an immersion fluid film disrupter configured to destroy formation of an immersion fluid film between an edge 143 of the cover and the immersion fluid included in the fluid handling structure during a period of movement of the substrate table relative to the fluid handling structure. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过提高浸没曝光的弯液面的稳定性来减少缺陷的系统。 解决方案：光刻设备包括流体处理结构，其被配置为使得邻近衬底台的衬底台和/或布置在衬底台的凹部中的衬底的上表面的空间包括浸没流体，盖25包括 从基板的上部表面延伸到基板的上部主表面的周边部分的平面状体，以便在使用期间覆盖凹部的边缘和基板的边缘之间的间隙，以及 浸没流体膜破坏器被配置为在衬底台相对于流体处理结构的移动期间，破坏在盖的边缘143和包括在流体处理结构中的浸没流体之间的浸没流体膜的形成。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011187954A

公开(公告)日：2011-09-22

申请号：JP2011039323

申请日：2011-02-25

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LAFARRE RAYMOND WILHELMUS LOUIS ,  RIEPEN MICHEL ,  CORTIE ROGIER HENDRIKUS MAGDALENA ,  MEIJERS RALPH JOSEPH ,  EVANGELISTA FABRIZIO

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03B27/52

Abstract: PROBLEM TO BE SOLVED: To reduce or remove the risk of focusing defects, and to maintain or increase throughput. SOLUTION: A liquid handling structure for a lithographic apparatus comprises a droplet controller configured to allow a droplet of immersion liquid to be lost from the handling structure and to prevent the droplet from colliding with the meniscus of the confined immersion liquid. The droplet controller may comprise gas knives arranged to overlap to block an incoming droplet. There may be extraction holes lined up with gaps between gas knives to extract liquid that passes through the gap. A droplet is allowed to escape through the gaps. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：减少或消除聚焦缺陷的风险，并维持或提高吞吐量。 解决方案：用于光刻设备的液体处理结构包括液滴控制器，其被配置为允许浸没液滴从处理结构中丢失并防止液滴与限制浸没液体的弯月面碰撞。 液滴控制器可以包括布置成重叠以阻挡进入的液滴的气刀。 在气刀之间可能存在排列有间隙的抽出孔，以提取通过间隙的液体。 允许液滴通过间隙逃逸。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011129914A

公开(公告)日：2011-06-30

申请号：JP2010276686

申请日：2010-12-13

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： ROSET NIEK JACOBUS JOHANNES ,  KATE NICOLAAS TEN ,  LAFARRE RAYMOND WILHELMUS LOUIS ,  ZDRAVKOV ALEXANDER NIKOLOV

IPC: H01L21/027

CPC classification number: G03F7/70716 ,  G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus for reducing the possibility of, for example, a leak of drops from an immersion space or generation of air bubbles into the immersion space. SOLUTION: An immersion lithography apparatus is disclosed. The apparatus has: a fluid handling system for supplying an immersion fluid between a projection system final component and a surface having a characteristic portion in a cross section thereof; and an adjustment fluid source for locally changing the composition of the immersion fluid such that at least surface tension of the immersion fluid locally decreases when the meniscus of the immersion fluid contacts the characteristic portion. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于降低例如从浸没空间泄漏液滴或产生气泡进入浸入空间的可能性的光刻设备。 解决方案：公开了一种浸没式光刻设备。 该装置具有：流体处理系统，用于在投影系统最终部件和具有其截面中的特征部分的表面之间提供浸没流体; 以及用于局部地改变浸没流体的组成的调节流体源，使得当浸没流体的弯月面接触特征部分时，浸入流体的至少表面张力局部减小。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010263213A

公开(公告)日：2010-11-18

申请号：JP2010104684

申请日：2010-04-30

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： VAN BOKHOVEN LAURENTIUS JOHANNES ADRIANUS ,  KATE NICOLAAS TEN ,  LAFARRE RAYMOND WILHELMUS LOUIS ,  CASTELIJNS HENRICUS JOZEF ,  ARTS PETRUS MARTINUS GERARDUS JOHANNES

IPC: H01L21/027

CPC classification number: G03F7/70716 ,  G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus capable of controlling the movement of an immersion fluid. SOLUTION: In an all wet lithography apparatus, the immersion liquid can fall from an edge of a substrate table. The immersion liquid moves with the substrate table during exposure. As a consequence of the movement of the immersion liquid, disturbance and/or dewetting may occur. A geometrical shape of the substrate table is proposed to reduce the disturbance and/or dewetting. An edge profile of a cross section of the substrate table and/or a planar shape of the substrate table are considered. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够控制浸液的运动的装置。 解决方案：在全湿式光刻设备中，浸没液体可以从基板台的边缘掉落。 浸入液体在曝光期间与衬底台一起移动。 作为浸液的运动的结果，可能发生干扰和/或去湿。 提出了衬底台的几何形状以减少干扰和/或去湿。 考虑衬底台的横截面和/或衬底台的平面形状的边缘轮廓。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：NL1036034A1

公开(公告)日：2009-04-15

申请号：NL1036034

申请日：2008-10-08

Applicant: ASML NETHERLANDS BV

Inventor： KRUIJT-STEGEMAN YVONNE WENDELA ,  KNAAPEN RAYMOND JACOBUS WILHELMUS ,  DIJKSMAN JOHAN FREDERIK ,  WUISTER SANDER FREDERIK ,  SCHRAM IVAR ,  LAFARRE RAYMOND WILHELMUS LOUIS

IPC: G03F7/00 ,  H01L21/30

公开(公告)号：NL2010817A

公开(公告)日：2013-12-02

申请号：NL2010817

申请日：2013-05-17

Applicant: ASML NETHERLANDS BV

Inventor： DONDERS SJOERD NICOLAAS LAMBERTUS ,  FIEN MENNO ,  HOOGENDAM CHRISTIAAN ALEXANDER ,  HOUBEN MARTIJN ,  JACOBS JOHANNES HENRICUS WILHELMUS ,  KOEVOETS ADRIANUS HENDRIK ,  LAFARRE RAYMOND WILHELMUS LOUIS ,  OVERKAMP JIM VINCENT ,  KATE NICOLAAS ,  WESTERLAKEN JAN STEVEN CHRISTIAAN ,  GROOT ANTONIUS FRANCISCUS JOHANNES ,  BEIJNUM MAARTEN ,  JONG ROB

IPC: G03F7/20 ,  H01L21/683

Abstract: A support apparatus for a lithographic apparatus has an object holder and an extraction body radially outward of the object holder. The object holder is configured to support an object. The extraction body includes an extraction opening configured to extract fluid from a top surface of the support apparatus. The extraction body is spaced from the object holder such that the extraction body is substantially decoupled from the object holder. The extraction body comprises a projection configured such that it surrounds the object holder and such that, in use, a layer of liquid is retained on the projection and in contact with an object supported on the object holder.

公开(公告)号：SG183603A1

公开(公告)日：2012-09-27

申请号：SG2012003877

申请日：2012-01-18

Applicant: ASML NETHERLANDS BV

Inventor： LAFARRE RAYMOND WILHELMUS LOUIS ,  TEN KATE NICOLAAS ,  DZIOMKINA NINA VLADIMIROVNA ,  KARADE YOGESH PRAMOD ,  TROMP SIEGFRIED ALEXANDER ,  LEIJSSEN JACOBUS JOSEPHUS ,  RODENBURG ELISABETH CORINNE ,  FEIJTS MAURICE WILHELMUS LEONARDUS HENDRICUS ,  HUISMAN HENDRIK

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The thin film stack comprises an (optional) isolation layer, a metal layer forming an electrode, a sensor, a heater, a transistor or a logic device, and a top isolation layer. Fig. 20