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公开(公告)号：SG11201500235XA
公开(公告)日：2015-02-27
申请号：SG11201500235X
申请日：2013-07-12
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , MONTERO PANCERA SABRINA , BAAN ZOLTAN
Abstract: A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.
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公开(公告)号：MY184912A
公开(公告)日：2021-04-30
申请号：MYPI2015000032
申请日：2013-07-01
Applicant: BASF SE
Inventor： KLIPP ANDREAS , BITTNER CHRISTIAN , OETTER GUNTER , HONCIUC ANDREI
Abstract: The use of a Gemini additive in compositions for treating semiconductor substrates is provided. The compositions are useful in processes for manufacturing integrated circuits devices, optical devices, micromachines and mechanical precision devices, in particular for developing photoresists and post etch residue removal to avoid pattern collapse.
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公开(公告)号：SG11201804636YA
公开(公告)日：2018-07-30
申请号：SG11201804636Y
申请日：2016-12-20
Applicant: BASF SE
Inventor： DÄSCHLEIN CHRISTIAN , SIEBERT MAX , LAUTER MICHAEL , PRZYBYLSKI PETER , PROELSS JULIAN , KLIPP ANDREAS , GUEVENC HACI OSMAN , LEUNISSEN LEONARDUS , BAUMANN ROELF-PETER , WEI TE YU
IPC: H01L21/321 , C11D3/00 , C11D3/37 , C11D11/00
Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly- acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, /so-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
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公开(公告)号：MY161218A
公开(公告)日：2017-04-14
申请号：MYPI2013002423
申请日：2012-01-17
Applicant: BASF SE
Inventor： KLIPP ANDREAS , MAYER DIETER
IPC: C09K13/08
Abstract: THE USE OF SURFACTANTS A, THE 1 % BY WEIGHT AQUEOUS SOLUTIONS OF WHICH EXHIBIT A STATIC SURFACE TENSION 3; AND A PHOTOLITHOGRAPHIC PROCESS MAKING USE OF THE SURFACTANTS A IN IMMERSION PHOTORESIST LAYERS, PHOTORESIST LAYERS EXPOSED TO ACTINIC RADIATION, DEVELOPER SOLUTIONS FOR THE EXPOSED PHOTORESIST LAYERS AND/OR IN CHEMICAL RINSE SOLUTIONS FOR DEVELOPED PATTERNED PHOTORESISTS COMPRISING PATTERNS HAVING LINE-SPACE DIMENSIONS BELOW 50 NM AND ASPECT RATIOS >3. BY WAY OF THE SURFACTANTS A, PATTERN COLLAPSE IS PREVENTED, LINE EDGE ROUGHNESS IS REDUCED, WATERMARK DEFECTS ARE PREVENTED AND REMOVED AND DEFECTS ARE REDUCED BY REMOVING PARTICLES.
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公开(公告)号：RU2585322C2
公开(公告)日：2016-05-27
申请号：RU2013146360
申请日：2012-02-29
Applicant: BASF SE
Inventor： KLIPP ANDREAS , ETTER GYUNTER , MONTERO PANSERA SABRINA , KHONCHUK ANDREJ , BITTNER KRISTIAN
IPC: G03F7/20
Abstract: Использование: дляполученияинтегральныхсхем, оптическихустройств, микромашини механическихвысокоточныхустройств. Сущностьизобретениязаключаетсяв том, чтоспособполученияинтегральныхсхем, оптическихустройств, микромашини механическихвысокоточныхустройств, включаетстадии: полученияподложки, имеющейслоиструктурированногоматериала, имеющиестрочныйинтервал 50 нми менееи характеристическоеотношение >2; полученияповерхностислоевструктурированногоматериалас положительнымилиотрицательнымэлектрическимзарядомпосредствомконтактаполупроводниковойподложкипоменьшеймереодинразс воднымсвободнымотфторараствором S, содержащимпоменьшеймереодносвободноеотфторакатионноеповерхностно-активноевеществоА, имеющеепоменьшеймереоднукатионнуюилипотенциальнокатионнуюгруппу, поменьшеймереодносвободноеотфтораанионноеповерхностно-активноевеществоА, имеющеепоменьшеймереоднуанионнуюилипотенциальноанионнуюгруппу, илипоменьшеймереодносвободноеотфтораамфотерноеповерхностно-активноевеществоА; выведениеводногосвободногоотфторараствора S изконтактас подложкой. Техническийрезультат: обеспечениевозможностиполученияинтегральныхсхемоптическихустройств, имеющихслоиструктурированногоматериалас характеристическимотношением >2. 11 з.п. ф-лы, 3 ил.
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Patent Agency Ranking
公开(公告)号：SG11201500098XA
公开(公告)日：2015-02-27
申请号：SG11201500098X
申请日：2013-07-01
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , OETTER GÜNTER , BITTNER CHRISTIAN
Abstract: The use of a gemini additive of the general formula I in compositions for treating semiconductor substrates: in particular for developing photoresists and post etch residue removal to avoid pattern collapse.
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公开(公告)号：SG10201402096TA
公开(公告)日：2014-10-30
申请号：SG10201402096T
申请日：2010-04-20
Applicant: BASF SE
Inventor： KLIPP ANDREAS
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公开(公告)号：SG10201402081TA
公开(公告)日：2014-07-30
申请号：SG10201402081T
申请日：2010-04-20
Applicant: BASF SE
Inventor： KLIPP ANDREAS
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公开(公告)号：SG191738A1
公开(公告)日：2013-08-30
申请号：SG2013046990
申请日：2012-01-17
Applicant: BASF SE
Inventor： KLIPP ANDREAS , MAYER DIETER
Abstract: The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension 3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresistscomprisingpatterns having line-space dimensions below 50 nm and aspect ratios >3.By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles.
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公开(公告)号：SG187756A1
公开(公告)日：2013-03-28
申请号：SG2013009360
申请日：2011-08-25
Applicant: BASF SE
Inventor： BRAUN SIMON , KLIPP ANDREAS , ROEGER-GOEPFERT CORNELIA , BITTNER CHRISTIAN , SHEN MEICHIN , LIN CHENGWEI
Abstract: An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1 ) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.
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