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    Light-emitting device
    21.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09035280B2

    公开(公告)日：2015-05-19

    申请号：US13970949

    申请日：2013-08-20

    Applicant: EPISTAR CORPORATION

    Inventor： Rong-Ren Lee ,  Chien-Fu Huang ,  Shih-Chang Lee ,  Yi-Ming Chen ,  Shiuan-Leh Lin

    IPC: H01L33/06 ,  H01L33/04

    CPC classification number: H01L33/04 ,  H01L33/06

    Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

    Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

    Light-emitting device
    22.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08941144B2

    公开(公告)日：2015-01-27

    申请号：US13901191

    申请日：2013-05-23

    Applicant: Epistar Corporation

    Inventor： Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Jhih-Sian Wang ,  Chien-Fu Huang ,  Shih-I Chen

    IPC: H01L33/22 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

    Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。 第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层 。 第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。

    Light-emitting device and the manufacturing method thereof
    23.
    发明授权
    Light-emitting device and the manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08847248B2

    公开(公告)日：2014-09-30

    申请号：US14089591

    申请日：2013-11-25

    Applicant: Epistar Corporation

    Inventor： Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

    IPC: H01L29/18 ,  H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/44 ,  H01L33/38

    CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.

    Abstract translation: 发光装置包括：载体; 形成在所述载体上的发光结构，其中所述发光结构具有面向所述载体的第一表面，与所述第一表面相对的第二表面，以及在所述第一表面和所述第二表面之间的有源层; 从所述第一表面延伸并穿过所述有源层的多个第一沟槽，以限定多个发光单元; 以及从所述第二沟槽延伸的多个第二沟槽; 所述第二沟槽中的至少一个在其侧壁上包括绝缘层。

    Light-emitting device
    24.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11088298B2

    公开(公告)日：2021-08-10

    申请号：US16883742

    申请日：2020-05-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

    IPC: H01L33/02 ,  H01L25/075 ,  H01L21/66 ,  H01L33/62 ,  H01L23/00 ,  H01L33/36

    Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

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