公开(公告)号：US20160155894A1

公开(公告)日：2016-06-02

申请号：US14901415

申请日：2013-06-26

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih Chiu

IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62

CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.

Abstract translation: 本公开提供了一种制造发光器件的方法，包括：提供第一衬底; 在所述第一衬底上提供半导体堆叠，所述半导体堆叠包括第一导电类型半导体层，所述第一导电类型半导体层上的发光层和所述发光层上的第二导电类型半导体层，其中所述半导体 堆叠被图案化并且包括彼此分离的多个半导体堆叠块，并且其中所述多个半导体堆叠块包括半导体堆叠的第一块和第二半导体堆叠块; 执行分离步骤以将第一块半导体堆叠与第一衬底分离，并且第二块半导体堆叠保留在第一衬底上; 提供永久性基板，其包括第一表面上的第一表面，第二表面和第三块半导体堆叠; 以及将所述第一半导体堆叠块和所述第二半导体堆叠块之一接合到所述第二表面。

公开(公告)号：US20160126433A1

公开(公告)日：2016-05-05

申请号：US14992785

申请日：2016-01-11

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Shiuan-Leh LIN ,  Chih-Chiang LU ,  Chia-Liang HSU

IPC: H01L33/58 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

Abstract translation: 本公开公开了一种制造发光器件的方法，包括以下步骤：提供衬底; 在基板上形成发光叠层; 在发光叠层上形成第一层; 提供永久性底物; 在永久性基板上形成第二层; 键合第一层和第二层以形成连接衬底和永久衬底的接合层; 其中所述结合层的折射率从所述发光叠层朝向所述永久基板减小。

公开(公告)号：US20160079481A1

公开(公告)日：2016-03-17

申请号：US14949414

申请日：2015-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Tzu-Chieh HSU ,  Fu-Chun TSAI ,  Yi-Wen HUANG ,  Chih-Chiang LU

IPC: H01L33/44 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。

公开(公告)号：US20150144984A1

公开(公告)日：2015-05-28

申请号：US14554488

申请日：2014-11-26

Applicant: Epistar Corporation

Inventor： Yi-Ming CHEN ,  Chun-Yu LIN ,  Tsung-Hsien YANG ,  Tzu-Chieh HSU ,  Kun-De LIN ,  Yao-Ning CHAN ,  Chih-Chiang LU

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

公开(公告)号：US20140273320A1

公开(公告)日：2014-09-18

申请号：US14293825

申请日：2014-06-02

Applicant: Epistar Corporation

Inventor： Chin-Lin YAO ,  Chih-Chiang LU

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/64

CPC classification number: H01L27/15 ,  H01L25/075 ,  H01L25/0753 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/6609 ,  H01L29/66969 ,  H01L29/861 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2924/00

Abstract: The present application discloses a method for making a light-emitting device comprising steps of: providing a light-emitting unit comprising an epitaxial structure; providing a protection layer; connecting the light-emitting unit with the protection layer by a second connecting layer; providing a heat dispersion substrate; and connecting the heat dispersion substrate with the protection layer by a first connecting layer.

Abstract translation: 本申请公开了一种制造发光器件的方法，包括以下步骤：提供包括外延结构的发光单元; 提供保护层; 通过第二连接层将发光单元与保护层连接; 提供散热基板; 以及通过第一连接层将散热基板与保护层连接。

公开(公告)号：US20190296186A1

公开(公告)日：2019-09-26

申请号：US16436544

申请日：2019-06-10

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

IPC: H01L33/02 ,  H01L23/00 ,  H01L25/075 ,  H01L33/62 ,  H01L21/66

Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

公开(公告)号：US20190103535A1

公开(公告)日：2019-04-04

申请号：US16192292

申请日：2018-11-15

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Wei-Chih PENG ,  Shiau-Huei SAN ,  Min-Hsun HSIEH

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/40 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  H01L33/00 ,  H01L33/38

Abstract: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.

公开(公告)号：US20180069157A1

公开(公告)日：2018-03-08

申请号：US15796241

申请日：2017-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

公开(公告)号：US20180062033A1

公开(公告)日：2018-03-01

申请号：US15793611

申请日：2017-10-25

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10

CPC classification number: H01L33/10 ,  H01L33/38 ,  H01L33/405

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a reflective structure formed on the first-type semiconductor layer; and a first interface and a second interface formed between light-emitting stack and the reflective structure; wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface.

公开(公告)号：US20170352782A1

公开(公告)日：2017-12-07

申请号：US15686331

申请日：2017-08-25

Applicant: Epistar Corporation

Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

IPC: H01L33/20 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.