公开(公告)号：US20170317238A1

公开(公告)日：2017-11-02

申请号：US15653038

申请日：2017-07-18

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Wen-Luh LIAO ,  Chun-Yu LIN ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/22 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/305 ,  H01L33/38 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

公开(公告)号：US20170033259A1

公开(公告)日：2017-02-02

申请号：US15295226

申请日：2016-10-17

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract translation: 半导体器件包括衬底，衬底上的第一半导体单元以及衬底和第一半导体单元之间的第一粘附结构，并且直接接触第一半导体单元和衬底，其中第一粘附结构包括粘附层和 牺牲层，并且粘合层和牺牲层由不同的材料制成，并且其中第一半导体单元和粘附层之间的粘附力与第一半导体单元和牺牲层之间的粘合不同。

公开(公告)号：US20170025567A1

公开(公告)日：2017-01-26

申请号：US14808295

申请日：2015-07-24

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping LU ,  Yi-Ming CHEN ,  Yu-Ren PENG ,  Chun-Yu LIN ,  Chun-Fu TSAI ,  Tzu-Chieh HSU

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Abstract translation: 发光装置包括载体; 以及包括第一半导体结构和第二半导体结构的第一半导体元件，其中所述第二半导体结构比所述第一半导体结构靠近所述载体更靠近所述载流子，所述第一半导体结构包括构造成发射第一半导体结构的第一半导体结构 在正常操作期间具有第一主波长的光，并且第二半导体结构包括在正常操作期间被配置为不发光的第二MQW结构。

公开(公告)号：US20160155894A1

公开(公告)日：2016-06-02

申请号：US14901415

申请日：2013-06-26

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih Chiu

IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62

CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.

Abstract translation: 本公开提供了一种制造发光器件的方法，包括：提供第一衬底; 在所述第一衬底上提供半导体堆叠，所述半导体堆叠包括第一导电类型半导体层，所述第一导电类型半导体层上的发光层和所述发光层上的第二导电类型半导体层，其中所述半导体 堆叠被图案化并且包括彼此分离的多个半导体堆叠块，并且其中所述多个半导体堆叠块包括半导体堆叠的第一块和第二半导体堆叠块; 执行分离步骤以将第一块半导体堆叠与第一衬底分离，并且第二块半导体堆叠保留在第一衬底上; 提供永久性基板，其包括第一表面上的第一表面，第二表面和第三块半导体堆叠; 以及将所述第一半导体堆叠块和所述第二半导体堆叠块之一接合到所述第二表面。

公开(公告)号：US20160079481A1

公开(公告)日：2016-03-17

申请号：US14949414

申请日：2015-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Tzu-Chieh HSU ,  Fu-Chun TSAI ,  Yi-Wen HUANG ,  Chih-Chiang LU

IPC: H01L33/44 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。

公开(公告)号：US20150144984A1

公开(公告)日：2015-05-28

申请号：US14554488

申请日：2014-11-26

Applicant: Epistar Corporation

Inventor： Yi-Ming CHEN ,  Chun-Yu LIN ,  Tsung-Hsien YANG ,  Tzu-Chieh HSU ,  Kun-De LIN ,  Yao-Ning CHAN ,  Chih-Chiang LU

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。