-
公开(公告)号：DE69427522T2
公开(公告)日：2002-03-28
申请号：DE69427522
申请日：1994-04-11
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER DR , MARTIN YVES , MEISSNER KLAUS , WEISS HELGA
Abstract: To allow faithfully the quantitative interpretation of the measuring results obtained by scanning force microscopes (STM) or atomic force microscopes (AFM) the probe tips used have to be exactly characterized before and after measuring since their size and shape may change during the measuring procedure. If the tips are cone-shaped, their diameter and their cone angle have to be known accurately. Described are calibration standards for profilometers, especially for STMs and AFMs, which are of high accuracy and which allow calibration measurements without frequently removing the probe tips. Methods of producing these calibration standards are shown and examples are given for the use of the calibration standards for measuring features in the sub-nanometer range or for calibrating profilometers.
-
公开(公告)号：DE19646120C2
公开(公告)日：2001-07-26
申请号：DE19646120
申请日：1996-11-08
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN , WEISS HELGA
-
公开(公告)号：GB2306804B
公开(公告)日：1999-07-14
申请号：GB9621500
申请日：1996-10-16
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN , MEISSNER KLAUS , STOEHR ROLAND , STEINER WERNER
Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.
-
公开(公告)号：GB2306804A
公开(公告)日：1997-05-07
申请号：GB9621500
申请日：1996-10-16
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN , MEISSNER KLAUS , STOEHR ROLAND , STEINER WERNER
Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.
-
公开(公告)号：DE19614072A1
公开(公告)日：1996-10-31
申请号：DE19614072
申请日：1996-04-09
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DIPL PHYS DR , WEISS HELGA
Abstract: A micromechanically manufactured read/write head (1) for charge coupled devices has a holder (2), a bearing arm (3) and a point (4) with a shaft (4a) and a front end (4b). The holder (2), the bearing arm (3) and the point form an integrated part (5) made of conductive material. The front end (4b) of the point (4) can directly contact the surface of a charge coupled device to read and write information. The shaft (4a) of the point (4) has a small diameter and is surrounded by a reinforcing sheath (6).
-
Patent Agency Ranking
公开(公告)号：DE69023478D1
公开(公告)日：1995-12-14
申请号：DE69023478
申请日：1990-03-05
Applicant: IBM
Inventor： BARTHA JOHANN W DR , BAYER THOMAS , GRESCHNER JOHANN DR , KRAUS GEORG , WOLTER OLAF DR
Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: a) introducing a gas mixture of silane(SiH4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; b) reacting the silane and ethylene at a temperature >400 DEG C, and in a total pressure range of about 26.6 to 266 Pa, at an RF power
-
公开(公告)号：DE69012555D1
公开(公告)日：1994-10-20
申请号：DE69012555
申请日：1990-07-25
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR
-
公开(公告)号：DE68902141D1
公开(公告)日：1992-08-20
申请号：DE68902141
申请日：1989-08-16
Applicant: IBM
Inventor： GRESCHNER JOHANN DR DIPL-PHYS , BAYER THOMAS , KRAUS GEORG , WOLTER OLAF DR DIPL PHYS , WEISS HELGA , BARTHA JOHANN DR DIPL PHYS
IPC: G01B7/34 , B44C1/22 , B81C1/00 , C03C15/00 , C23F1/00 , G01N27/00 , G01Q60/04 , G01Q70/16 , H01J37/28 , H01L21/306 , H01L41/09
Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with an insulating layer; 2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching: 3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching: 4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively; 5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and 6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask. In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 DEG C and 1000 V. Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask. The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.
-
公开(公告)号：DE19538792C2
公开(公告)日：2000-08-03
申请号：DE19538792
申请日：1995-10-18
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN , MEISSNER KLAUS , STEINER WERNER , STOEHR ROLAND
Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.
-
公开(公告)号：DE19646120A1
公开(公告)日：1997-12-18
申请号：DE19646120
申请日：1996-11-08
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , WEISS HELGA
IPC: B81B3/00 , G01B7/34 , G01L1/14 , G01Q60/16 , G01Q60/38 , G01Q70/10 , G01Q70/14 , H01J37/28 , H01J49/00 , H01L49/00
Abstract: The sensor includes a bulkhead (2) formed in a single piece of material with a probe (1) with a conical shaft (1a) and a countersunk head (1b) at the point. The cone has a side angle of between 75 and 88 degrees. The material is a rigid silicon and the probe may be covered in one or more thin layers of silicon di:oxide, silicon nitride, silicon carbide, diamond carbon or other organic or metallic material.
-
-
-
-
-
-
-
-
-
Search Results
40
records
(took 0.019 seconds)
