公开(公告)号：AT297055T

公开(公告)日：2005-06-15

申请号：AT97305987

申请日：1997-08-06

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG

IPC: H01L39/22 ,  H01L29/161 ,  H01L29/165 ,  H01L29/80 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24 ,  H01L39/00

Abstract: A structure based on strained Si/SiGe that has high temperature superconductivity is disclosed. The structure for carrying superconducting current includes a substrate (12); a first epitaxial P type semiconductor layer (14), which is under compressive strain, for transporting holes; a second epitaxial barrier layer (20) positioned on the first layer (14); and a third epitaxial N type semiconductor layer (24), which is under tensile strain, for transporting electrons. The barrier layer (30) is thick enough to restrict recombination of electrons and holes, yet the barrier layer (30) is thin enough to permit coulomb force attraction between the electrons and holes to form electron-hole pairs. The first and second layers (14,20) include SiGe, such as Si1.xGex, where x is 0.6-0.8 for the first layer (14), and 0.3-0.4 for the second layer (20). The third layer (24) includes Si.

公开(公告)号：HU0302872A2

公开(公告)日：2003-12-29

申请号：HU0302872

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LAUZEROTTI LUOIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

公开(公告)号：AU9202401A

公开(公告)日：2002-04-08

申请号：AU9202401

申请日：2001-09-27

Applicant: IBM

Inventor： CHU JACK OON ,  EMIC CHRISTOPHER D ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.

公开(公告)号：DE69209901D1

公开(公告)日：1996-05-23

申请号：DE69209901

申请日：1992-06-03

Applicant: IBM

Inventor： AKBAR SHAHZAD ,  CHU JACK OON ,  CUNNINGHAM BIRAN

IPC: C23C16/02 ,  C23C16/28 ,  C30B25/02 ,  H01L21/205 ,  C23C16/44 ,  C30B29/08 ,  H01L21/306

公开(公告)号：DE19515346A1

公开(公告)日：1995-11-23

申请号：DE19515346

申请日：1995-04-26

Applicant: IBM

Inventor： CABRAL JUN CYRIL ,  CHAN KEVIN KOK ,  CHU JACK OON ,  HARPER JAMEX MCKELL EDWIN

IPC: C30B29/06 ,  C23C14/08 ,  C23C16/04 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  C30B25/04 ,  C30B23/04

Abstract: Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium and then growing the epitaxial layer over the wafer at temperatures below 650 DEG C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650 DEG C. by providing a lower temperature process.

公开(公告)号：DE60141843D1

公开(公告)日：2010-05-27

申请号：DE60141843

申请日：2001-09-27

Applicant: IBM

Inventor： CANAPERI DONALD ,  CHU JACK OON ,  D EMIC CHRISTOPHER ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.

公开(公告)号：DE69836654T2

公开(公告)日：2007-09-27

申请号：DE69836654

申请日：1998-06-26

Applicant: IBM

Inventor： CARDONE FRANK ,  CHU JACK OON ,  ISMAIL KHALID EZZELDIN

IPC: H01L21/205 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L21/338 ,  H01L29/10 ,  H01L29/36 ,  H01L29/772 ,  H01L29/778 ,  H01L29/812

Abstract: A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

公开(公告)号：MY126089A

公开(公告)日：2006-09-29

申请号：MYPI20014195

申请日：2001-09-06

Applicant: IBM

Inventor： CANAPERI DONALD F ,  CHU JACK OON ,  EMIC CHRISTOPHER P D ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/36 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A METHOD FOR FORMING STRAINED SI OR SIGE ON RELAXED SIGE ON INSULATOR (SGOJ) IS DESCRIBED INCORPORATING GROWING EPITAXIAL SI1GE LAYERS ON A SEMICONDUCTOR SUBSTRATE, IMPLANTING HYDROGEN INTO A SELECTED SI1..GE LAYER TO FORM A HYDROGENERICH DEFECTIVE LAYER, SMOOTHING SURFACES BY CHEMO-MECHANICAL POLISHING, BONDING TWO SUBSTRATES TOGETHER VIA THEXMAL TREATMENTS AND SEPARATING TWO SUBSTRATES AT THE HYDROGEN-RICH DEFECTIVE LAYER. THE SEPARATED SUBSTRATES MAY HAVE ITS UPPER SURFACE SMOOTHED BY CMI’ FOR EPITAXIAL DEPOSITION OF RELAXED SI,GE,,, AND STRAINED SI1GE DEPENDING UPON COMPOSITION, STRAINED SI, STRAINED SIC, STRAINED GE, STRAINED GEC, AND STRAINED SI3GEC.

公开(公告)号：PL362710A1

公开(公告)日：2004-11-02

申请号：PL36271001

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

公开(公告)号：CZ20032066A3

公开(公告)日：2003-11-12

申请号：CZ20032066

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.