公开(公告)号：CA1111699A

公开(公告)日：1981-11-03

申请号：CA319302

申请日：1979-01-09

Applicant: IBM

Inventor： CANAVELLO BENJAMIN J ,  HATZAKIS MICHAEL ,  SHAW JANE M

IPC: G03C1/72 ,  G03F7/00 ,  G03F7/022 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

Abstract: METHOD OF MODIFYING THE DEVELOPMENT PROFILE OF PHOTORESISTS The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.

公开(公告)号：DE2753658A1

公开(公告)日：1978-06-22

申请号：DE2753658

申请日：1977-12-02

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: H01L21/027 ,  G03F7/039 ,  G03C1/68

Abstract: Polymethyl methacrylate methacrylic acid (P[MMA/MAA]) copolymer powder is prebaked above 200 DEG C. The prebaked powder is dissolved in a suitable casting solvent. The insoluble material produced during prebaking is removed by filtration. Then the solution remaining is applied to a substrate, post-baked at a temperature less than or equal to the prebaking temperature to drive off the solvent, exposed to electron beam radiation, and developed in a developing solvent.

公开(公告)号：FR2303379A1

公开(公告)日：1976-10-01

申请号：FR7601477

申请日：1976-01-14

Applicant: IBM

Inventor： AHN KIE Y ,  HATZAKIS MICHAEL ,  POWERS JOHN V

IPC: G11C11/14 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H01L21/3205 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38 ,  H01L21/64 ,  H01L49/02

公开(公告)号：FR2279135A1

公开(公告)日：1976-02-13

申请号：FR7518148

申请日：1975-06-03

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: H01L21/027 ,  C23F1/00 ,  G03F1/22 ,  G03F1/02 ,  H01L21/70

公开(公告)号：DE69115847T2

公开(公告)日：1996-07-11

申请号：DE69115847

申请日：1991-10-14

Applicant: IBM

Inventor： CLABES JOACHIM G ,  HATZAKIS MICHAEL ,  LEE KAM L ,  PETEK BOJAN ,  SLONCZEWSKI JOHN C

IPC: G01B7/34 ,  B81B1/00 ,  G01B7/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/54 ,  G01Q70/12 ,  G01R1/067 ,  G01R1/07 ,  H01J37/28 ,  G01N27/00 ,  G01R31/315

公开(公告)号：DE69024452T2

公开(公告)日：1996-07-11

申请号：DE69024452

申请日：1990-10-08

Applicant: IBM

Inventor： BABICH EDWARD DARKO ,  GELORME JEFFREY DONALD ,  HATZAKIS MICHAEL ,  SHAW JANE MARGARET ,  STEWART KEVIN JAY ,  WITMAN DAVID FRANK

IPC: G03F7/031 ,  C08F2/50 ,  C08G59/68 ,  C08G77/14 ,  C08G77/22 ,  C08G85/00 ,  C08L83/04 ,  C08L83/06 ,  G03F7/027 ,  G03F7/029 ,  G03F7/075

Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: wherein X is CH=CH2 or -(-CH2-)-n0-(-R) with R being H or wherein each R , R and R individually is selected from the group of alkyl, alkenyl, aryl, wherein each R , R and R individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

公开(公告)号：DE69115847D1

公开(公告)日：1996-02-08

申请号：DE69115847

申请日：1991-10-14

Applicant: IBM

Inventor： CLABES JOACHIM G ,  HATZAKIS MICHAEL ,  LEE KAM L ,  PETEK BOJAN ,  SLONCZEWSKI JOHN C

IPC: G01B7/34 ,  B81B1/00 ,  G01B7/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/54 ,  G01Q70/12 ,  G01R1/067 ,  G01R1/07 ,  H01J37/28 ,  G01N27/00 ,  G01R31/315

公开(公告)号：DE69024452D1

公开(公告)日：1996-02-08

申请号：DE69024452

申请日：1990-10-08

Applicant: IBM

Inventor： BABICH EDWARD DARKO ,  GELORME JEFFREY DONALD ,  HATZAKIS MICHAEL ,  SHAW JANE MARGARET ,  STEWART KEVIN JAY ,  WITMAN DAVID FRANK

IPC: G03F7/031 ,  C08F2/50 ,  C08G59/68 ,  C08G77/14 ,  C08G77/22 ,  C08G85/00 ,  C08L83/04 ,  C08L83/06 ,  G03F7/027 ,  G03F7/029 ,  G03F7/075

Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: wherein X is CH=CH2 or -(-CH2-)-n0-(-R) with R being H or wherein each R , R and R individually is selected from the group of alkyl, alkenyl, aryl, wherein each R , R and R individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

公开(公告)号：DE3679434D1

公开(公告)日：1991-07-04

申请号：DE3679434

申请日：1986-03-11

Applicant: IBM

Inventor： BABICH EDWARD DARKO ,  HATZAKIS MICHAEL ,  JACOBS SCOTT LAURENCE ,  PARASCZCAK JURI ROSTYSLAV ,  SHAW JANE MARGARET ,  WITMAN DAVID FRANK

IPC: C08L61/00 ,  C08K5/549 ,  C08L33/00 ,  C08L33/02 ,  C08L61/04 ,  C08L61/06 ,  G03C1/00 ,  G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  G03F7/075

公开(公告)号：DE3066410D1

公开(公告)日：1984-03-08

申请号：DE3066410

申请日：1980-09-15

Applicant: IBM

Inventor： AVIRAM ARI ,  HOFER DONALD CLIFFORD ,  KAUFMAN FRANK BENJAMIN ,  KRAMER STEVEN ROBERT ,  HATZAKIS MICHAEL ,  JONES FLETCHER ,  SHAW JANE MARGARET

IPC: G03F7/038 ,  G03C1/72 ,  G03C5/16