公开(公告)号：DE102004057759A1

公开(公告)日：2006-06-08

申请号：DE102004057759

申请日：2004-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  PFORR RAINER ,  KAMM FRANK-MICHAEL ,  ZIEBOLD RALF ,  HENNIG MARIO

IPC: G03F7/20 ,  G03F1/00 ,  G03F1/36

Abstract: Reducing critical dimension (CD) variations caused by scattered light in functional structures formed in a photoresist by photolithographic imaging through a mask comprises separating a target layout into two partial layouts, providing two masks (M1, M2) according to the partial layouts, where M1 has a reduced bright-field content; imaging the structures of M1 in the photoresist; and imaging the structures of M2 in the photoresist. Reducing critical dimension (CD) variations caused by scattered light in functional structures formed in a photoresist by photolithographic imaging through a mask, where the structures are arranged according to a target layout in sections of the mask adjacent to bright-field sections, comprises separating the target layout into two partial layouts, providing two masks (M1, M2) according to the partial layouts, where M1 has a reduced bright-field content and M2 has an arrangement of structures that will result in the target layout at the end of the process; imaging the structures of M1 in the photoresist, whereby CD variations in the structures are reduced because of the reduced bright-field content; and imaging the structures of M2 in the photoresist. Independent claims are also included for: (1) mask M1 for carrying out the above process, where the bright-field sections (21) adjacent to the sections (2) with the functional structures (3) are provided with opaque or semitransparent auxiliary sections (31); (2) mask M2 for carrying out the above process, where the structures in M2 are formed by opaque sections in or on a transparent support.

公开(公告)号：DE102004025203A1

公开(公告)日：2005-12-15

申请号：DE102004025203

申请日：2004-05-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  PFORR RAINER ,  LAESSIG ANTJE ,  ELIAN KLAUS ,  HENNIG MARIO ,  NOELSCHER CHRISTOPH ,  KOESTLER WOLFRAM

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38

Abstract: Photolithographic production of a photomask by the standard steps of coating the substrate with a photolacquer, heating for solvent removal, illumination, heating and finally developing with a basic medium is such that the photolacquer is coated with an acid at a stage between the solvent removal and the final development step.

公开(公告)号：DE10310136A1

公开(公告)日：2004-09-16

申请号：DE10310136

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14

Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

公开(公告)号：DE10160616A1

公开(公告)日：2003-06-05

申请号：DE10160616

申请日：2001-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  KUNKEL GERHARD ,  HENNIG MARIO ,  KOEHLE RODERICK ,  VOIGT INA

IPC: G03F1/00 ,  G03F1/14

Abstract: Phase shift mask (8) comprises a first structure (1) and a second structure (2) arranged as a pair on a quartz support material with a light-impermeable chromium layer surrounding the two structures. The first structure has a phase shift for a light entering the structures which is different by 180 deg from the second structure. An Independent claim is also included for a process for the production of the phase shift mask. Preferred Features: The phase shift mask has a number of regularly arranged pairs of first and second structures. The structure pairs form pairs of trench capacitors on a semiconductor wafer in a storage cell field.