公开(公告)号：MY124608A

公开(公告)日：2006-06-30

申请号：MYPI9902512

申请日：1999-06-18

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: C23C14/00 ,  H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: DISCLOSED IS A SYSTEM FOR PROCESSING A SEMICONDUCTOR WAFER THROUGH PLASMA ETCHING OPERATIONS. THE SYSTEM HAS A PROCESS CHAMBER THAT INCLUDES A SUPPORT CHUCK FOR HOLDING THE SEMICONDUCTOR WAFER AND PAIR OF RF POWER SOURCES. IN ANOTHER CASE, THE SYSTEM CAN BE CONFIGURED SUCH THAT THE ELECTRODE IS GROUNDED AND THE PAIR OF RF FREQUENCIES ARE FED TO THE SUPPORT CHUCK (BOTTOM ELECTRODE). THE SYSTEM THEREFORE INCLUDES AN ELECTRODE THAT IS POSITIONED WITHIN THE SYSTEM AND OVER THE SEMICONDUCTOR WAFER. THE ELECTODE HAS A CENTER REGION, A FIRST SURFACE AND A SECOND SURFACE. THE FIRST SURFACE IS CONFIGURED TO RECEIVE PROCESSING GASES FROM A SOURCE THAT IS EXTERNAL TO THE SYSTEM AND FLOW THE PROCESSING GASES INTO THE CENTER REGION. THE SECOND SURFACE HAS A PLURALITY OF GAS FEED HOLES (228) THAT ARE CONTINUOUSLY COUPLED TO A CORRESPONDING PLURALITY OF ELECTRODE OPENINGS (202B) THAT HAVE ELECTRODE OPENING DIAMETERS THE ARE GREATER THAN GAS FEED HOLE DIAMETERS OF THE PLURALITY OF GAS FEED HOLES. THE PLURALITY OF ELECTRODE OPENINGS ARE CONFIGURED TO DEFINE AN ELECTRODE SURFACE (234) THAT IS DEFINED OVER A WAFER SURFACE (236) OF THE SEMICONDUCTOR WAFER.THE ELECTRODE SURFACE ASSISTS IN INCREASING AN ELECTRODE PLASMA SHEATH AREA IN ORDER TO CAUSE A SHIFT IN BIAS VOLTAGE ONTO THE WAFER SURFACE, THEREBY INCREASING THE ION BOMBARDMENT ENERGY OVER THE WAFER WITHOUT INCREASING THE PLASMA DENSITY.(FIG 2E)

公开(公告)号：AU2003228799A8

公开(公告)日：2003-11-11

申请号：AU2003228799

申请日：2003-05-01

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  BAILEY ANDREW D III ,  HOWALD ARTHUR M ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

公开(公告)号：PL345159A1

公开(公告)日：2001-12-03

申请号：PL34515999

申请日：1999-06-15

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  LI LUMIN

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: Disclosed is an electrode used for processing a semiconductor wafer through plasma etching operations. The electrode is disposed within a process chamber that includes a support chuck for holding the semiconductor wafer and a pair of RF power sources. The electrode has a center region, a first surface and a second surface. The first surface is configured to receive processing gases from a source and to flow the processing gases into the center region. The second surface has a plurality of gas feed holes that are continuously coupled to a corresponding plurality of electrode openings. Electrode opening diameters are greater than gas feed hole diameters. The plurality of electrode openings define an electrode surface that is over a wafer surface. The electrode surface assists in defining an electrode plasma sheath surface area which causes an increase in bias voltage onto the wafer surface, thereby increasing the ion bombardment energy over the wafer without increasing the plasma density.

公开(公告)号：AU4902801A

公开(公告)日：2001-06-25

申请号：AU4902801

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065 ,  H01J37/00

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

公开(公告)号：AU1918801A

公开(公告)日：2001-05-30

申请号：AU1918801

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

公开(公告)号：SG179482A1

公开(公告)日：2012-04-27

申请号：SG2012017695

申请日：2008-02-14

Applicant: LAM RES CORP

Inventor： SEXTON GREGORY S ,  BAILEY ANDREW D ,  KUTHI ANDRAS ,  KIM YUNSANG

Abstract: OF THE DISCLOSURE The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate. Figure 1A

公开(公告)号：DE60033312T2

公开(公告)日：2007-11-22

申请号：DE60033312

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY D ,  SCHOEPP M ,  HEMKER J ,  WILCOXSON H ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

公开(公告)号：DE60036107D1

公开(公告)日：2007-10-04

申请号：DE60036107

申请日：2000-06-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  KADKHODAYAN BABAK ,  KUTHI ANDRAS

IPC: H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：AU2003299889A1

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： ANDERSON THOMAS W ,  BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

公开(公告)号：AU2002322547A1

公开(公告)日：2003-02-17

申请号：AU2002322547

申请日：2002-07-18

Applicant: LAM RES CORP

Inventor： SCHOEPP ALAN M ,  WILCOXSON MARK H ,  BAILEY III ANDREW D ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.