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    Method for Producing a Micromechanical Component, and Corresponding Micromechanical Component
    22.
    发明申请
    Method for Producing a Micromechanical Component, and Corresponding Micromechanical Component 有权
    微机械部件的生产方法和相应的微机械部件

    公开(公告)号：US20160023895A1

    公开(公告)日：2016-01-28

    申请号：US14774799

    申请日：2014-03-12

    Applicant: ROBERT BOSCH GMBH

    Inventor： Friedjof Heuck ,  Christoph Schelling

    IPC: B81C1/00

    CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

    Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

    Abstract translation: 微机械部件的制造方法包括向基板提供暴露在结构化区域中的单晶起始层。 结构化区域具有上表面和侧面，其中在上表面上设置适合于促进结构单晶起始层暴露的上表面的硅外延生长的催化剂层，并且不提供催化剂层 在侧面。 该方法还包括在反应气体气氛中使用催化剂层在单晶起始层的上表面上进行选择性外延生长工艺，以形成微机械功能层。

    METHOD OF FABRICATING A MEMS/NEMS ELECTROMECHANICAL COMPONENT
    23.
    发明申请
    METHOD OF FABRICATING A MEMS/NEMS ELECTROMECHANICAL COMPONENT 有权
    制造MEMS / NEMS电子元件的方法

    公开(公告)号：US20100029031A1

    公开(公告)日：2010-02-04

    申请号：US12488898

    申请日：2009-06-22

    Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

    Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

    IPC: H01L21/18

    CPC classification number: B81C1/00507 ,  B81B2201/0271 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0177 ,  B81C2203/0136 ,  B81C2203/0145 ,  H03H3/0072 ,  H03H9/175 ,  H03H9/2436 ,  Y10S438/933

    Abstract: The invention relates to a method of fabricating and electromechanical device on at least one substrate, the device including at least one active element and wherein the method comprises: a) making a heterogeneous substrate comprising a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between a said cavity and said interface layer; and wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.

    Abstract translation: 本发明涉及在至少一个基板上制造和机电装置的方法，所述装置包括至少一个有源元件，并且其中所述方法包括：a）制造包含第一部分，界面层和第二部分 ，所述第一部分包括被夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，所述第一区域延伸到所述第一部分的表面，并且所述第二区域延伸到所述界面层，所述第二区域延伸至所述界面层， 区域至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地被破坏; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述空腔和所述界面层之间的所述第二区域的至少一部分; 并且其中所述基底的第一和第二部分分别由通过粘合而组装在一起的第一和第二基底构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

    Episeal pressure sensor and method for making an episeal pressure sensor
    24.
    发明申请
    Episeal pressure sensor and method for making an episeal pressure sensor 有权
    Episeal压力传感器和制造episeal压力传感器的方法

    公开(公告)号：US20040163476A1

    公开(公告)日：2004-08-26

    申请号：US10375645

    申请日：2003-02-26

    Inventor： Aaron Partridge ,  Markus Lutz

    IPC: G01L009/00

    CPC classification number: B81C1/00047 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0177 ,  B81C2203/0145 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073

    Abstract: A method for making a pressure sensor by providing a wafer including a base silicon layer, a buried sacrificial layer, and a top silicon layer. The top silicon layer is arranged over the buried sacrificial layer and the buried sacrificial layer is arranged over the base silicon layer. Etching vents through the top silicon layer to the buried sacrificial layer and removing a portion of the buried sacrificial layer. Depositing silicon to seal the vents and arranging a strain gauge or a capacitance contact on the wafer. A method for making a pressure sensor including providing a bulk wafer and depositing a sacrificial layer on the bulk wafer. Depositing silicon on the sacrificial layer and the bulk wafer to form an encapsulation layer. Etching vents through the encapsulation layer to the sacrificial layer and removing the sacrificial layer. Closing the vents with a silicon deposition and arranging a strain gauge or a capacitance contact on the encapsulation layer. A pressure sensing device including a substrate, an encapsulation layer with vents, and voids between the substrate and the encapsulation layer. A portion of the encapsulation layer above the voids forms a membrane and deposited silicon plugs fill the vents. A strain gauge or a top capacitive contact arranged on the membrane.

    Abstract translation: 一种通过提供包括基底硅层，掩埋牺牲层和顶部硅层的晶片来制造压力传感器的方法。 顶层硅层布置在掩埋牺牲层上方，掩埋牺牲层布置在基底硅层上。 蚀刻通孔通过顶部硅层到掩埋牺牲层并去除一部分掩埋牺牲层。 沉积硅以密封通风口并在晶片上布置应变计或电容接触。 一种用于制造压力传感器的方法，包括提供体晶片并在体晶片上沉积牺牲层。 在牺牲层和体晶片上沉积硅以形成封装层。 蚀刻通过封装层到达牺牲层并去除牺牲层。 用硅沉积封闭通风口，并在封装层上布置应变计或电容接触。 一种压力感测装置，包括基底，通气孔的封装层以及基底和封装层之间的空隙。 空隙之上的封装层的一部分形成膜并且沉积的硅塞填充通风口。 布置在膜上的应变计或顶部电容接触。

    METHOD FOR FABRICATING SUSPENDED MEMS STRUCTURES
    26.
    发明公开
    METHOD FOR FABRICATING SUSPENDED MEMS STRUCTURES 审中-公开
    制造悬挂MEMS结构的方法

    公开(公告)号：EP3237326A1

    公开(公告)日：2017-11-01

    申请号：EP16780394.9

    申请日：2016-01-05

    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

    Inventor： MEYER, David J. ,  DOWNEY, Brian P.

    IPC: B81C1/00 ,  B81B7/00 ,  B81B7/02 ,  H01L27/04

    CPC classification number: B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

    Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

    Abstract translation: 一种用于制造包括部分或完全悬置在衬底上的外延半导体功能层的悬置微机电系统（MEMS）结构的工艺。 牺牲释放层和功能器件层形成在衬底上。 对功能器件层进行蚀刻以在功能器件层中形成窗口，从而界定将从功能器件层形成的悬置MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲释放层以去除由窗口限定的区域中的功能层下面的牺牲释放层以形成悬浮的MEMS结构。

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