公开(公告)号：KR1020070098643A

公开(公告)日：2007-10-05

申请号：KR1020070030756

申请日：2007-03-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토나오키 ,  고시미즈치시오 ,  하야카와요시노부 ,  하나오카히데토시 ,  이와타마나부 ,  다나카사토시

IPC: H01L21/205

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A plasma processing apparatus and a plasma processing method are provided to improve uniformity of a process by arbitrarily controlling a spatial distribution characteristic of the plasma density while completely preventing formation of an undesired film on an opposed electrode. A plasma processing apparatus includes a capacitively coupled(parallel plate type) plasma etching device using a lower dual frequency superimposed application method. A substrate(W) is mounted on a susceptor(16). A primary high frequency for generating plasma is applied to the susceptor(16) from a high-frequency power source(30) and a secondary high-frequency for injecting ion is applied to the susceptor(16) from a high-frequency power source(70). An upper electrode(34) is attached to a chamber(10) via a ring-shaped insulator(35). The upper electrode(34) is connected to a ground potential via an inductor(54) and a conducting wire(56).

Abstract translation: 提供等离子体处理装置和等离子体处理方法，以通过任意地控制等离子体密度的空间分布特性来改善工艺的均匀性，同时完全防止在相对电极上形成不期望的膜。 等离子体处理装置包括使用较低双重叠加应用方法的电容耦合（平行板型）等离子体蚀刻装置。 衬底（W）安装在基座（16）上。 用于产生等离子体的初级高频从高频电源（30）施加到基座（16），并且用于注入离子的次级高频从高频电源施加到基座（16） 70）。 上电极（34）通过环形绝缘体（35）附接到室（10）。 上电极（34）经由电感器（54）和导线（56）连接到接地电位。

公开(公告)号：KR1020070098587A

公开(公告)日：2007-10-05

申请号：KR1020070030130

申请日：2007-03-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토나오키 ,  하야카와요시노부 ,  하나오카히데토시 ,  고다마노리아키 ,  고시미즈치시오 ,  이와타마나부 ,  다나카사토시

IPC: H01L21/3065

CPC classification number: H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

Abstract: An apparatus for processing plasma and a method for processing the plasma are provided to improve the uniformity inside a surface of a process by voluntarily controlling the spatial distribution of plasma density. An apparatus for processing plasma includes a processing container(10), a first electrode, a second electrode, a processing gas supplying unit, and a first high frequency feeding power unit. The processing container(10) forms a vacuum by being exhausted. The first electrode is attached in a state of electrically floating through an insulator and a space inside the processing container(10). The second electrode supports a substrate to be processed by being opposite to the first electrode. The processing gas supplying unit supplies processing gas to a processing space between the first electrode and a side wall of the second electrode and the processing container(10). The first high frequency feeding power unit applies a first high frequency to the second electrode to generate the plasma of the processing gas on the processing space.

Abstract translation: 提供了一种用于处理等离子体的设备和用于处理等离子体的方法，以通过主动地控制等离子体密度的空间分布来改善工艺表面内部的均匀性。 一种用于处理等离子体的设备包括处理容器（10），第一电极，第二电极，处理气体供应单元和第一高频馈电功率单元。 处理容器（10）通过排出而形成真空。 第一电极通过绝缘体和处理容器（10）内部的空间电浮动的状态附接。 第二电极通过与第一电极相对的方式支撑要处理的衬底。 处理气体供给单元将处理气体供给到第一电极和第二电极的侧壁与处理容器（10）的处理空间。 第一高频馈电功率单元向第二电极施加第一高频以在处理空间上产生处理气体的等离子体。

公开(公告)号：KR1020070020142A

公开(公告)日：2007-02-16

申请号：KR1020077001688

申请日：2005-06-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고시이시아키라 ,  스기모토마사루 ,  히나타구니히코 ,  고바야시노리유키 ,  고시미즈치시오 ,  오타니류지 ,  기비가즈오 ,  사이토마사시 ,  마츠모토나오키 ,  오오야요시노부 ,  이와타마나부 ,  야노다이스케 ,  야마자와요헤이 ,  하나오카히데토시 ,  하야미도시히로 ,  야마자키히로키 ,  사토마나부

IPC: H05H1/18

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J2237/3342 ,  H01L21/31138

Abstract: There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma. ® KIPO & WIPO 2007

Abstract translation: 提供了一种用于在上电极（34）和下电极（16）之间产生等离子体作为处理气体并对晶片（W）进行等离子体蚀刻的等离子体蚀刻装置。 上电极（34）包括用于施加直流电压的可变直流电源（50），使得上电极（34）的表面上的自偏压Vdc的绝对值变得足够大以获得适当的溅射效应 上电极（34）上的等离子体护套的表面和厚度变得足够厚以形成期望的小型化等离子体。 ®KIPO＆WIPO 2007