公开(公告)号：US20180108808A1

公开(公告)日：2018-04-19

申请号：US15821147

申请日：2017-11-22

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Chiu-Lin YAO

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

公开(公告)号：US20170263818A1

公开(公告)日：2017-09-14

申请号：US15605524

申请日：2017-05-25

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/42

CPC classification number: H01L33/36 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42

Abstract: A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.

公开(公告)号：US20160043277A1

公开(公告)日：2016-02-11

申请号：US14874077

申请日：2015-10-02

Applicant: EPISTAR CORPORATION

Inventor： Yi Lin GUO ,  Chen OU ,  Chi Ling LEE ,  Wei Han WANG ,  Hung Chih YANG ,  Chi Hung WU

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: An LED manufacturing method includes steps of: providing a substrate including a first surface; forming a first portion of a first semiconductor layer on the first surface in a first atmosphere including a first carrier gas; and forming a second portion of the first semiconductor layer on the first portion in a second atmosphere including a second carrier gas; wherein a plurality of first cavities is formed on a surface of the first portion during forming the first portion; and wherein the plurality of first cavities is transformed to a plurality of second cavities during forming the second portion, and one of the second cavities includes a first inclined surface and a second inclined surface above the first inclined surface.

Abstract translation: LED制造方法包括以下步骤：提供包括第一表面的基板; 在包括第一载气的第一气氛中，在所述第一表面上形成第一半导体层的第一部分; 以及在包括第二载气的第二气氛中在所述第一部分上形成所述第一半导体层的第二部分; 其中在形成所述第一部分期间，在所述第一部分的表面上形成多个第一空腔; 并且其中所述多个第一空腔在形成所述第二部分期间被变换为多个第二空腔，并且所述第二空腔中的一个包括第一倾斜表面和位于所述第一倾斜表面上方的第二倾斜表面。

公开(公告)号：US20140202627A1

公开(公告)日：2014-07-24

申请号：US14220060

申请日：2014-03-19

Applicant: Epistar Corporation

Inventor： Chen-Ke HSU ,  Liang Sheng CHI ,  Chun-Chang CHEN ,  Win-Jim SU ,  Hsu-Cheng LIN ,  Mei-Ling TSAI ,  Yi Lung LIU ,  Chen OU

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L21/67005 ,  H01L21/67132 ,  H01L21/67271 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1111 ,  Y10T156/1116 ,  Y10T156/1158 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1917 ,  Y10T156/1933 ,  Y10T156/1983

Abstract: A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.

Abstract translation: 一种芯片分选方法包括：提供具有第一表面的芯片保持器; 在第一表面上提供多个芯片; 提供具有第二表面的芯片接收器，其中所述第二表面面向所述第一表面; 将多个芯片附接到第二表面; 降低多个芯片和第一表面之间的粘合力; 以及在减少所述多个芯片与所述第一表面之间的粘合力的步骤之后，从所述第一表面分离所述多个芯片。

公开(公告)号：US20250169238A1

公开(公告)日：2025-05-22

申请号：US19031651

申请日：2025-01-18

Applicant: EPISTAR CORPORATION

Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

IPC: H10H20/83 ,  H01L25/075 ,  H10H20/819 ,  H10H20/824 ,  H10H20/825 ,  H10H20/831 ,  H10H20/841

Abstract: The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure. The second electrode pad is located on the second-conductivity-type contact structure. The second-conductivity-type contact structure includes a bonding portion, an extension portion, and a connection portion.

公开(公告)号：US20230395765A1

公开(公告)日：2023-12-07

申请号：US18230119

申请日：2023-08-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20230361248A1

公开(公告)日：2023-11-09

申请号：US18223898

申请日：2023-07-19

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/32 ,  H01L33/0075 ,  H01L33/62 ,  H01L33/20 ,  H01L33/145 ,  H01L2933/0016

Abstract: A light-emitting device, includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, comprising a second core region under the second pad electrode and an extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the second core region; wherein in a top view, a contour of the second pad electrode has a circular shape and a contour of the second core region has a shape which is different from the circular shape and selected from square, rectangle, rounded rectangle, rhombus, trapezoid and polygon.

公开(公告)号：US20230134581A1

公开(公告)日：2023-05-04

申请号：US17979563

申请日：2022-11-02

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming LIU ,  Chen OU ,  Jing-Jie DAI ,  Shih-Wei WANG ,  Chih-Ciao YANG ,  Feng-Wen HUANG ,  Dian-Ying HU ,  Yu-Hsiang YEH

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

公开(公告)号：US20220037556A1

公开(公告)日：2022-02-03

申请号：US17389467

申请日：2021-07-30

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Li-Yu SHEN ,  Yu-Yi HUNG ,  Chen OU ,  Li-Ming CHANG

IPC: H01L33/20 ,  H01L33/10 ,  H01L27/15 ,  H01L33/38

Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the stack, including a first surface facing the stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked, and a portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees, the second directional part has a second angle with the normal direction of the second surface in a range of 0-30 degrees, and the second FWHM is smaller than the first FWHM.

公开(公告)号：US20210020817A1

公开(公告)日：2021-01-21

申请号：US16985945

申请日：2020-08-05

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62 ,  H01L33/20

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.