公开(公告)号：US20240136463A1

公开(公告)日：2024-04-25

申请号：US18391644

申请日：2023-12-20

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  A61B5/021 ,  A61B5/024 ,  A61B5/145 ,  A61B5/1455 ,  G01J3/10 ,  H01L25/16 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.

公开(公告)号：US20220173292A1

公开(公告)日：2022-06-02

申请号：US17456858

申请日：2021-11-29

Applicant: EPISTAR CORPORATION

Inventor： Ching-Hsing SHEN ,  Wen-Luh LIAO ,  Chen OU ,  Shih-Chang LEE ,  Hui-Fang KAO ,  Yun-Chung CHOU

IPC: H01L33/62

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an epitaxial stack including a mesa region and a lower region; a first pad on the lower region and a second pad on the mesa region; a first contact between the epitaxial stack and the first pad; a passivation structure covering the epitaxial stack and including a first opening; and a first metal structure in the first opening and disposed between the first contact and the first pad; wherein the first metal structure includes a first top surface away from the epitaxial stack, and the passivation structure including a second top surface at a position corresponding to the lower region and away from the epitaxial stack, and a first height difference between the first top surface and the second top surface is less than 3 μm and larger than zero; and wherein the first metal structure includes a first width adjacent to the first contact and a second width adjacent to the first pad, and the second width is larger than the first width.

公开(公告)号：US20220102582A1

公开(公告)日：2022-03-31

申请号：US17550449

申请日：2021-12-14

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Fan-Lei WU ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Hung-Ta CHENG ,  Chih-Chaing YANG ,  Yao-Ru CHANG ,  Yi HSIAO ,  Hsiang CHANG

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

公开(公告)号：US20210408311A1

公开(公告)日：2021-12-30

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC: H01L31/055 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/12 ,  H01L25/16 ,  H01L31/101

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US20200212261A1

公开(公告)日：2020-07-02

申请号：US16725708

申请日：2019-12-23

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang LEE ,  Meng-Yang CHEN

IPC: H01L33/30 ,  H01L33/06 ,  H01L33/14

Abstract: A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer substantially does not contain aluminum.

公开(公告)号：US20180277590A1

公开(公告)日：2018-09-27

申请号：US15926708

申请日：2018-03-20

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chan CHUNG ,  Wen-Luh LIAO ,  Shih-Chang LEE

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

Abstract: A light-emitting device includes: a substrate comprising a first side and a second side opposite to the first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area and an electrode pad area connected to the light extraction area; multiple electrode pads, wherein each of the multiple electrode pads is on one of the electrode pad areas; and a blocking layer between one of the semiconductor stacks and the substrate.

公开(公告)号：US20170331001A1

公开(公告)日：2017-11-16

申请号：US15591544

申请日：2017-05-10

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng YU ,  Ching-Yuan TSAI ,  Yao-Ru CHANG ,  Hsin-Chan CHUNG ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Cheng-Hsing CHIANG ,  Kuo-Feng HUANG ,  Hsu-Hsuan TENG ,  Hung-Ta CHENG ,  Yung-Fu CHANG

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/002 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20140217359A1

公开(公告)日：2014-08-07

申请号：US14166642

申请日：2014-01-28

Applicant: EPISTAR CORPORATION

Inventor： Chien-Ming WU ,  Wu-Tsung LO ,  Shih-Chang LEE

IPC: H01L33/30

CPC classification number: H01L33/10 ,  H01L33/04 ,  H01L33/14

Abstract: The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer.

Abstract translation: 本申请公开了一种包括第一发光半导体堆叠，形成在第一发光半导体堆叠上的第一中间层和形成在第一中间层上的第二发光半导体堆叠的发光装置。 第一中间层包括第一导电半导体层，第二导电半导体层和中间区域。 中间区域具有位于第一导电半导体层和第二导电半导体层之间的不连续结构。

公开(公告)号：US20140048768A1

公开(公告)日：2014-02-20

申请号：US13970949

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Chien-Fu HUANG ,  Shih-Chang LEE ,  Yi-Ming CHEN ,  Shiuan-Leh LIN

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。