公开(公告)号：DE102010060831A1

公开(公告)日：2011-07-21

申请号：DE102010060831

申请日：2010-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEINRICH ALEXANDER ,  JORDAN STEFFEN ,  RIEDL EDMUND ,  SCHARF THORSTEN

IPC: H01L21/58 ,  H01L23/488

Abstract: Bondmaterial (30), das ein schmelzbares Verbindungsmaterial (36) und eine Vielzahl von Heterostrukturen (40), die in dem gesamten schmelzbaren Verbindungsmaterial (36) verteilt sind, enthält, wobei die Heterostrukturen (40) mindestens ein erstes Material (42) und ein zweites Material (44) aufweisen, die in der Lage sind, bei Initiierung durch eine externe Energie eine selbstständig ablaufende exotherme Reaktion durchzuführen, um Wärme zu erzeugen, die ausreichend ist, um das schmelzbare Verbindungsmaterial (36) zu schmelzen.

公开(公告)号：DE102009040632A1

公开(公告)日：2010-04-01

申请号：DE102009040632

申请日：2009-09-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  NIKITIN IVAN ,  LODERMEYER JOHANNES ,  BERGMANN ROBERT ,  GUTH KARSTEN

IPC: H01L21/58 ,  H01L21/60 ,  H01L23/48

Abstract: A method of fabricating a semiconductor device. One embodiment provides a metal carrier. A semiconductor chip is provided. A porous layer is produced at a surface of at least one of the carrier and the semiconductor chip. The semiconductor chip is placed on the carrier. The resulting structure is heated until the semiconductor chip is attached to the carrier.

公开(公告)号：DE112006003861T5

公开(公告)日：2009-04-02

申请号：DE112006003861

申请日：2006-05-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  JORDAN STEFAN ,  SCHILZ CHRISTOF MATTHIAS ,  WONG FEE HOON

IPC: C25D7/12 ,  H01L23/31

Abstract: A semiconductor package includes a semiconductor component including a circuit carrier with a plurality of inner contact pads, a semiconductor chip, and a plurality of electrical connections. An adhesion promotion layer is disposed on at least areas of the semiconductor component and a plastic encapsulation material encapsulates at least the semiconductor chip, the plurality of electrical connections and the plurality of the inner contact pads. Surface regions of the semiconductor component are selectively activated.

公开(公告)号：DE102008028942A1

公开(公告)日：2009-01-02

申请号：DE102008028942

申请日：2008-06-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEEGANS MANFRED ,  LEICHT MARKUS ,  WOEHLERT STEFAN ,  RIEDL EDMUND

IPC: H01L23/488 ,  H01L21/60

Abstract: A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.

公开(公告)号：DE10330192B4

公开(公告)日：2008-11-13

申请号：DE10330192

申请日：2003-07-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  SCHOBER WOLFGANG

IPC: H01L21/56 ,  H01B1/00 ,  H01B1/02 ,  H01L23/28

公开(公告)号：DE10124047B4

公开(公告)日：2006-12-14

申请号：DE10124047

申请日：2001-05-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  SEWALD RAINER ,  RIEDL EDMUND

IPC: H01L23/50 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495

公开(公告)号：DE102004058878A1

公开(公告)日：2006-06-14

申请号：DE102004058878

申请日：2004-12-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOSSEINI KHALIL ,  GALESIC IVAN ,  ROESL KONRAD ,  MAHLERL JOACHIM ,  RIEDL EDMUND

IPC: H01L23/13 ,  H01L21/58

Abstract: The invention relates to a semiconductor component (4) with at least one chip (2) and one substrate (7). The chip (2) has a rear side (6) that is connected to a first surface (8) of the substrate (7) by means of diffusion soldering. To this end, recesses (11) are made in the first surface (8) of the substrate (7) whereby having intermetallic phases that are formed during the diffusion soldering. The invention also relates to methods for producing a semiconductor component (4) involving the following steps: coating a rear side (6) of a chip (2) with a soldering metal that is suited for diffusion soldering; manufacturing the substrate (7) with a first surface (8) that is made of a material suited for diffusion soldering; making recesses (11) in the first surface (8) of the substrate (7), and; connecting the rear side (6) of the chip (2) to the first surface (8) of the substrate (7) by diffusion soldering.

公开(公告)号：DE102004021633B4

公开(公告)日：2006-04-06

申请号：DE102004021633

申请日：2004-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  OTREMBA RALF ,  GALESIC IVAN

IPC: H01L21/58 ,  H01L21/44 ,  H01L21/60 ,  H01L21/603 ,  H01L23/12 ,  H01L23/13 ,  H01L23/488

公开(公告)号：DE102004021633A1

公开(公告)日：2005-12-01

申请号：DE102004021633

申请日：2004-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  OTREMBA RALF ,  GALESIC IVAN

IPC: H01L21/44 ,  H01L21/58 ,  H01L21/60 ,  H01L21/603 ,  H01L23/12 ,  H01L23/13 ,  H01L23/488

公开(公告)号：DE10147378A1

公开(公告)日：2003-02-20

申请号：DE10147378

申请日：2001-09-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND

IPC: B23K35/26 ,  C22C12/00 ,  B23K35/24

Abstract: Soft solder, especially electronic solder, contains 20-99.8 wt.% bismuth, 0.1-50 wt.% silver and 0.1-30 wt.% copper as alloying components. Preferably the soft solder contains 63-77 wt.% bismuth, 20-30 wt.% silver, and 0.1-10 wt.% copper as alloying components, especially 68-72 wt.% bismuth, 24-26 wt.% silver, and 4.8-5.2 wt.% copper as alloying components.