公开(公告)号：MY145206A

公开(公告)日：2012-01-13

申请号：MYPI20101395

申请日：2005-06-15

Applicant: LAM RES CORP

Inventor： DORDI YEZDI N ,  REDEKER FRED C ,  BOYD JOHN M ,  MARASCHIN ROBERT ,  WOODS CARL

IPC: C25D21/12

Abstract: AN ELECTROPLATING APPARATUS FOR ELECTROPLATING A SURFACE OF A WAFER IS PROVIDED. THE WAFER IS CAPABLE OF BEING ELECTRICALLY CHARGED AS A CATHODE. THE ELECTROPLATING APPARATUS INCLUDES A PLATING HEAD CAPABLE OF BEING POSITIONED EITHER OVER OR UNDER THE SURFACE OF A WAFER AND CAPABLE OF BEING ELECTRICALLY CHARGED AS AN ANODE. THE PLATING HEAD IS CAPABLE OF ENABLING METALLIC PLATING BETWEEN THE SURFACE OF THE WAFER AND THE PLATING HEAD WHEN THE WAFER AND PLATING HEAD ARE CHARGED. THE PLATING HEAD FURTHER COMPRISES A VOLTAGE SENSOR PAIR CAPABLE OF SENSING A VOLTAGE PRESENT BETWEEN THE PLATING HEAD AND THE SURFACE OF THE WAFER, AND A CONTROLLER CAPABLE OF RECEIVING DATA FROM THE VOLTAGE SENSOR PAIR. THE DATA RECEIVED FROM THE VOLTAGE SENSOR PAIR IS USED BY THE CONTROLLER TO MAINTAIN A SUBSTANTIALLY CONSTANT VOLTAGE TO BE APPLIED BY THE ANODE WHEN THE PLATING HEAD IS PLACED IN POSITIONS OVER THE SURFACE OF THE WAFER. A METHOD OF ELECTROPLATING A WAFER IS ALSO PROVIDED.

公开(公告)号：SG175593A1

公开(公告)日：2011-11-28

申请号：SG2011072816

申请日：2007-09-11

Applicant: LAM RES CORP

Inventor： THIE WILLIAM ,  BOYD JOHN M ,  DORDI YEZDI ,  REDEKER FRITZ C

Abstract: OF THE DISCLOSUREAn electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.Figure 2C

公开(公告)号：SG174751A1

公开(公告)日：2011-10-28

申请号：SG2011062189

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

Abstract: OF THE DISCLOSURE[109] The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.Figure 9A

公开(公告)号：MY144403A

公开(公告)日：2011-09-15

申请号：MYPI20083826

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/306

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：MY144080A

公开(公告)日：2011-08-15

申请号：MYPI20055992

申请日：2005-12-19

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRED C

IPC: B23K26/00 ,  B23K26/02 ,  B23K26/16

Abstract: A SUBSTRATE PROCESSING SYSTEM INCLUDES A FIRST, MOVABLE SURFACE TENSION GRADIENT DEVICE (106, 800), A DICING DEVICE (1010) AND A SYSTEM CONTROLLER. THE FIRST, MOVABLE SURFACE TENSION GRADIENT DEVICE IS CAPABLE OF SUPPORTING A FIRST PROCESS WITHIN A FIRST MENISCUS (116, 900). THE FIRST MENISCUS BEING SUPPORTED BETWEEN THE FIRST SURFACE TENSION GRADIENT DEVICE AND A FIRST SURFACE OF THE SUBSTRATE (108). THE FIRST MOVABLE SURFACE TENSION GRADIENT DEVICE CAPABLE OF BEING MOVED RELATIVE TO THE FIRST SURFACE OF THE SUBSTRATE. THE DICING DEVICE IS ORIENTED TO A DESIRED DICING LOCATION (1050C). THE DESIRED DICING LOCATION BEING ENCOMPASSED BY THE MENISCUS. THE SYSTEM CONTROLLER IS COUPLED TO THE DICING DEVICE AND THE SURFACE TENSION GRADIENT DEVICE. THE SYSTEM CONTROLLER INCLUDES A PROCESS RECIPE. A METHOD FOR DICING A SUBSTRATE IS ALSO DESCRIBED.

公开(公告)号：MY140300A

公开(公告)日：2009-12-31

申请号：MYPI20060643

申请日：2006-02-15

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  BOYD JOHN M ,  WILCOXSON MARK ,  LARIOS JOHN DE

IPC: B08B1/02 ,  H01L21/00

Abstract: A METHOD FOR REMOVING POST-PROCESSING RESIDUES IN A SINGLE WAFER CLEANING SYSTEM IS PROVIDED. THE METHOD INITIATES WITH PROVIDING (640) A FIRST HEATED FLUID TO A PROXIMITY HEAD (106) DISPOSED OVER A SUBSTRATE (108). THEN, A MENISCUS (116) OF THE FIRST FLUID IS GENERATED BETWEEN A SURFACE OF THE SUBSTRATE AND AN OPPOSING SURFACE OF THE PROXIMITY HEAD. THE SUBSTRATE IS LINEARLY MOVED UNDER THE PROXIMITY HEAD. A SINGLE WAFER CLEANING SYSTEM IS ALSO PROVIDED.

公开(公告)号：AU2003220308A8

公开(公告)日：2003-10-20

申请号：AU2003220308

申请日：2003-03-13

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA

IPC: B08B3/10 ,  B08B3/12 ,  B08B7/04

公开(公告)号：AU2002241637A1

公开(公告)日：2002-07-16

申请号：AU2002241637

申请日：2001-12-13

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  KISTLER ROD ,  GOTKIS YEHIEL

IPC: B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

公开(公告)号：MY152899A

公开(公告)日：2014-11-28

申请号：MYPI20063849

申请日：2006-08-09

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

IPC: B08B3/00 ,  B08B3/04 ,  H01L21/00

Abstract: A FIRST PROXIMITY HEAD (103) IS CONFIGURED TO DEFINE A MENISCUS (111) OF A PHOTORESIST DEVELOPER SOLUTION ON A SUBSTRATE (101). THE MENISCUS IS TO BE DEFINED BETWEEN A BOTTOM OF THE FIRST PROXIMITY HEAD AND THE SUBSTRATE. A SECOND PROXIMITY HEAD (105) IS CONFIGURED TO DEFINE A RINSING MENISCUS (121) ON THE SUBSTRATE AND REMOVE THE RINSING MENISCUS FROM THE SUBSTRATE. THE SECOND PROXIMITY HEAD IS POSITIONED TO FOLLOW THE FIRST PROXIMITY HEAD RELATIVE TO A TRAVERSAL DIRECTION OF THE FIRST AND SECOND PROXIMITY HEADS OVER THE SUBSTRATE. EXPOSURE OF THE SUBSTRATE TO THE MENISCUS OF PHOTORESIST DEVELOPER SOLUTION CAUSES PREVIOUSLY IRRADIATED PHOTORESIST MATERIAL ON THE SUBSTRATE TO BE DEVELOPED TO RENDER A PATTERNED PHOTORESIST LATER. THE FIRST AND SECOND PROXIMITY HEADS ENABLE PRECISE CONTROL OF A RESIDENCE TIME OF THE PHOTORESIST DEVELOPER SOLUTION ON THE SUBSTRATE DURING THE DEVELOPMENT PROCESS.

公开(公告)号：MY150143A

公开(公告)日：2013-11-29

申请号：MYPI20063116

申请日：2006-06-29

Applicant: LAM RES CORP

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

IPC: H01L21/00

Abstract: A PRESSURE IS MAINTAINED WITHIN A VOLUME WITHIN WHICH A SEMICONDUCTOR WAFER (101) RESIDES AT A PRESSURE THAT IS SUFFICIENT TO MAINTAIN A LIQUID STATE OF A PRECURSOR FLUID (301) TO A NON- NEWTONIAN FLUID (303). THE PRECURSOR FLUID IS DISPOSED PROXIMATE TO A MATERIAL (103B, 104) TO BE REMOVED FROM THE SEMICONDUCTOR WAFER (101) WHILE MAINTAINING THE PRECURSOR FLUID (301) IN THE LIQUID STATE. THE PRESSURE IS REDUCED IN THE VOLUME WITHIN WHICH THE SEMICONDUCTOR WAFER (101) RESIDES SUCH THAT THE PRECURSOR FLUID (301) DISPOSED ON THE WAFER WITHIN THE VOLUME IS TRANSFORMED INTO THE NON-NEWTONIAN FLUID (303). AN EXPANSION OF THE PRECURSOR FLUID (301) AND MOVEMENT OF THE PRECURSOR FLUID RELATIVE TO THE WAFER (101) DURING TRANSFORMATION INTO THE NON-NEWTONIAN FLUID (303) CAUSES THE RESULTING NON-NEWTONIAN FLUID TO REMOVE THE MATERIAL (103B, 104) FROM THE SEMICONDUCTOR WAFER (101).