公开(公告)号：EP1611599A4

公开(公告)日：2007-06-13

申请号：EP04719319

申请日：2004-03-10

Applicant: LAM RES CORP

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III ,  HEMKER DAVID ,  COOK JOEL M

IPC: H01L21/321 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32135 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/7684

Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.

公开(公告)号：EP1604393A4

公开(公告)日：2009-11-11

申请号：EP04719313

申请日：2004-03-10

Applicant: LAM RES CORP

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III ,  HEMKER DAVID ,  COOK JOEL M

IPC: B44C1/22 ,  H01L20060101 ,  H01L21/302 ,  H01L21/304 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/4763 ,  H01L21/768 ,  H01L33/00

CPC classification number: H01L21/7684 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136

公开(公告)号：EP1632006A4

公开(公告)日：2008-11-26

申请号：EP04710690

申请日：2004-02-12

Applicant: LAM RES CORP

Inventor： WILCOXSON MARK H ,  BAILEY ANDREW D III

IPC: H01J7/24 ,  H01J37/32 ,  H01Q1/36 ,  H01Q7/00

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement (210) for generating an electric field inside a process chamber (202) through a window (212). Generally, the antenna arrangement (210) comprises an outer loop (610), comprising a first outer loop turn (618) disposed around an antenna axis (614), an inner loop (606), comprising a first inner loop turn (616) disposed around the antenna axis (614), wherein the inner loop (606) is closer to the antenna axis (614) than the outer loop (610) is to the antenna axis (614) in each azimuthal direction, and a radial connector (640) radially electrically connecting the outer loop (610) to the inner loop (606), wherein the radial connector (640) is placed a large distance from the window (212).

公开(公告)号：SG187256A1

公开(公告)日：2013-03-28

申请号：SG2013007901

申请日：2011-06-22

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

公开(公告)号：AU5758101A

公开(公告)日：2001-10-08

申请号：AU5758101

申请日：2001-03-13

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III

IPC: H01J37/32 ,  H01J37/00

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed inside of the chamber. The magnetic array has a plurality of magnetic elements that are disposed around a plasma region within the process chamber.

公开(公告)号：AU1606101A

公开(公告)日：2001-05-30

申请号：AU1606101

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: C23C16/507 ,  B05D7/24 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：SG11201401989UA

公开(公告)日：2014-09-26

申请号：SG11201401989U

申请日：2012-11-01

Applicant: LAM RES CORP

Inventor： DHINDSA RAHINDER ,  MARAKHTANOV ALEXEI ,  DELGADINO GERARDO ,  HUDSON ERIC ,  YEN BI MING ,  BAILEY ANDREW D III

IPC: H01L21/306

公开(公告)号：MY147419A

公开(公告)日：2012-12-14

申请号：MYPI20080850

申请日：2006-09-22

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  WILLIAM THIE ,  YEZDI DORDI ,  BAILEY ANDREW D III

IPC: B23K10/00

Abstract: 17 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR ABSTRACT OF THE DISCLOSURE AN APPARATUS GENERATING A PLASMA FOR REMOVING METAL OXIDE FROM A SUBSTRATE IS 5 DISCLOSED. THE EMBODIMENT INCLUDES A POWERED ELECTRODE ASSEMBLY, INCLUDING A POWERED ELECTRODE, A FIRST DIELECTRIC LAYER, AND A FIRST WIRE MESH DISPOSED BETWEEN THE POWERED ELECTRODE AND THE FIRST DIELECTRIC LAYER. THE EMBODIMENT ALSO INCLUDES A GROUNDED ELECTRODE ASSEMBLY DISPOSED OPPOSITE THE POWERED ELECTRODE ASSEMBLY SO AS TO FORM A CAVITY WHEREIN THE PLASMA IS GENERATED, THE FIRST WIRE MESH BEING SHIELDED FROM THE PLASMA BY THE FIRST DIELECTRIC LAYER WHEN 10 THE PLASMA IS PRESENT IN THE CAVITY, THE CAVITY HAVING AN OUTLET AT ONE END FOR PROVIDING THE PLASMA TO REMOVE THE METAL OXIDE.

公开(公告)号：AU1767401A

公开(公告)日：2001-05-30

申请号：AU1767401

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：SG2014013858A

公开(公告)日：2014-07-30

申请号：SG2014013858

申请日：2008-01-24

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SEXTON GREGORY ,  KIM YUNSANG ,  KENNEDY WILLIAM S

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.