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31.
公开(公告)号:IT1405794B1
公开(公告)日:2014-01-24
申请号:ITTO20100942
申请日:2010-11-26
Applicant: ST MICROELECTRONICS SRL
Inventor: POZZATI ENRICO , VIGNA BENEDETTO , BOTTINELLI FABIO
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32.
公开(公告)号:ITTO20120515A1
公开(公告)日:2013-12-15
申请号:ITTO20120515
申请日:2012-06-14
Applicant: ST MICROELECTRONICS NV , ST MICROELECTRONICS SRL
Inventor: CONTI SEBASTIANO , VIGNA BENEDETTO
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公开(公告)号:DE69932516T2
公开(公告)日:2007-02-15
申请号:DE69932516
申请日:1999-09-10
Applicant: ST MICROELECTRONICS SRL
Inventor: ZERBINI SARAH , VIGNA BENEDETTO , GARAVAGLIA MASSIMO , TOMESI GIANLUCA
IPC: G01P15/10 , B81B3/00 , G01P15/00 , G01P15/097 , G01P15/125 , G01P21/00 , H01L29/84
Abstract: The inertial sensor (1) comprises an inner stator (2) and an outer rotor (3) which are electrostatically coupled together by means of mobile sensor arms (5) and fixed sensor arms (9a, 9b). The rotor (3) is connected to a calibration microactuator (12) comprising four sets (27) of actuator elements (13) arranged one for each quadrant of the inertial sensor. There are two actuator elements (13) making up each set, which are identical to each other, are angularly equidistant, and each of which comprises a mobile actuator arm (15) connected to the rotor (3) and bearing a plurality of mobile actuator electrodes (16), and a pair of fixed actuator arms (17a, 17b) which are set on opposite sides with respect to the corresponding mobile actuator arm and bear a plurality of fixed actuator electrodes (19a, 19b). The mobile actuator electrodes (16) and fixed actuator electrodes (19a, 19b) are connected to a driving unit (20) which biases them so as to cause a preset motion of the rotor (3), the motion being detected by a sensing unit (24) connected to the fixed sensor arms (9a, 9b).
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公开(公告)号:DE69831659D1
公开(公告)日:2006-02-02
申请号:DE69831659
申请日:1998-07-22
Applicant: ST MICROELECTRONICS SRL
Inventor: CINI DARIO , VIGNA BENEDETTO
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公开(公告)号:DE69632950T2
公开(公告)日:2005-08-25
申请号:DE69632950
申请日:1996-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor: FORONI MARIO , FERRARI PAOLO , VIGNA BENEDETTO , VILLA FLAVIO
IPC: G01L1/18 , B81B3/00 , B81B7/02 , B81C1/00 , G01L9/00 , G01P15/02 , G01P15/08 , H01L21/306 , H01L21/764 , H01L29/84 , H01L21/00 , H01L21/762
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公开(公告)号:DE69924964D1
公开(公告)日:2005-06-02
申请号:DE69924964
申请日:1999-02-23
Applicant: ST MICROELECTRONICS SRL
Inventor: VIGNA BENEDETTO
Abstract: The hard disk read/write unit (30) is formed in a monolithic body (31) of semiconductor material, including a suspension structure (44), a coupling (36) integral with the suspension structure, and a microactuator (37), integral with the coupling. The monolithic body (31) has a first portion (31a) accommodating integrated electronic components (33), and a second portion (31b), accommodating the coupling (36) and the microactuator (37). The coupling (36) is formed from a central region (40), accommodating the microactuator (37); an annular region (41), separated from the central region (40) by a first trench (45), and from the suspension (44) by a second trench (46); a first pair of suspension arms (42), extending between the central region (40) and the annular region (41), along a first axis; and a second pair of suspension arms (43), extending between the annular region (41) and the suspension (44), along a second axis perpendicular to the first axis. The first and second pair of arms (42, 43), with a reduced thickness, impart to the coupling (36) yielding for rotations around the first and second axes of the central region.
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公开(公告)号:DE69731604D1
公开(公告)日:2004-12-23
申请号:DE69731604
申请日:1997-01-31
Applicant: ST MICROELECTRONICS SRL
Inventor: MASTROMATTEO UBALDO , VIGNA BENEDETTO
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公开(公告)号:DE69726718T2
公开(公告)日:2004-10-07
申请号:DE69726718
申请日:1997-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor: FERRARI PAOLO , VIGNA BENEDETTO , MONTANINI PIETRO , FERRERA MARCO
IPC: G01P9/04 , B81B3/00 , G01C19/56 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L41/08
Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).
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公开(公告)号:ITMI20022769A1
公开(公告)日:2004-06-25
申请号:ITMI20022769
申请日:2002-12-24
Applicant: ST MICROELECTRONICS SRL
Inventor: COMBI CHANTAL , VIGNA BENEDETTO
IPC: H01H20060101 , H01H59/00 , H01L21/44
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公开(公告)号:DE69725123D1
公开(公告)日:2003-10-30
申请号:DE69725123
申请日:1997-07-04
Applicant: ST MICROELECTRONICS SRL
Inventor: MURARI BRUNO , VIGNA BENEDETTO , FERRARI PAOLO
Abstract: An electromagnetic head (130) for a storage device comprises a magnetic core (205) forming a magnetic circuit, the magnetic core (205) being interrupted by a first air-gap (230) for magnetic coupling with a memory cell of the device, and by at least one second air-gap (235) which separates a first pole (240) and a second pole (245) of the magnetic core (205), and magnetoresistive means (250) disposed in the region of the second air-gap (235) for reading the memory cell; the magnetoresistive means (250) are connected to the magnetic core (205) in the region of the first pole (240) and of the second pole (245) so as to be connected in the magnetic circuit.
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