公开(公告)号：US20110068675A1

公开(公告)日：2011-03-24

申请号：US12957576

申请日：2010-12-01

Applicant: Artush A. Abgaryan ,  Eli Levi

Inventor： Artush A. Abgaryan ,  Eli Levi

IPC: H01J29/46

CPC classification number: H01J29/62 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/18 ,  H01J35/14 ,  H01J37/063 ,  H01J37/065 ,  H01J37/3174 ,  H01J2237/0492 ,  H01J2237/0656 ,  H01J2237/28

Abstract: System that focuses electron beams in an electro-static area to a laminar flow of electrons with uniform distribution of current density and extraordinary demagnification includes a housing having a first interior portion and a second interior portion electrically insulated from the first interior portion. The second interior portion has an electric field-free space. An electrode system is disposed in the first interior portion and includes a cathode assembly and at least one anode assembly. The cathode assembly generates an electron beam that passes through each anode assembly and then into the electric field-free space in the second interior portion. The system parameters may be calculated and created due to the CGMR conceptual method.

Abstract translation: 将静电区域中的电子束聚焦到具有均匀分布的电流密度和非常缩小的电子层流的系统包括具有与第一内部部分电绝缘的第一内部部分和第二内部部分的壳体。 第二内部部分具有无电场的空间。 电极系统设置在第一内部部分中并且包括阴极组件和至少一个阳极组件。 阴极组件产生通过每个阳极组件然后进入第二内部部分中的无电场空间的电子束。 由于CGMR概念方法，系统参数可能会被计算和创建。

公开(公告)号：US20240062986A1

公开(公告)日：2024-02-22

申请号：US18270937

申请日：2021-03-01

Applicant: Hitachi High-Tech Corporation

Inventor： Naho TERAO ,  Toshiyuki YOKOSUKA ,  Hideyuki KOTSUJI ,  Tomohito NAKANO ,  Hajime KAWANO

IPC: H01J37/02 ,  H01J37/28 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/026 ,  H01J37/28 ,  H01J37/244 ,  H01J37/222 ,  H01J2237/2817 ,  H01J2237/0656 ,  H01J2237/30483

Abstract: The purpose of the present invention is to provide a charged particle beam device that can specify irradiation conditions for primary charged particles that can obtain a desired charged state without adjusting the acceleration voltage. The charged particle beam device according to the present invention specifies the irradiation conditions for a charged particle beam in which the charged state of a sample is switched between a positive charge and a negative charge, and adjusts the irradiation conditions according to the relationship between the specified irradiation conditions and the irradiation conditions when an observation image of the sample has been acquired (see FIG. 8).

公开(公告)号：US20170125216A1

公开(公告)日：2017-05-04

申请号：US14932416

申请日：2015-11-04

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu

IPC: H01J37/32 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32165 ,  H01J37/32422 ,  H01J2237/0656 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308

Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.

公开(公告)号：US08319193B2

公开(公告)日：2012-11-27

申请号：US12999075

申请日：2009-06-10

Applicant: Keigo Kasuya ,  Takashi Ohshima ,  Souichi Katagiri ,  Shigeru Kokubo ,  Hideo Todokoro

Inventor： Keigo Kasuya ,  Takashi Ohshima ,  Souichi Katagiri ,  Shigeru Kokubo ,  Hideo Todokoro

IPC: H01J27/26

CPC classification number: H01J1/304 ,  H01J37/073 ,  H01J37/265 ,  H01J2237/022 ,  H01J2237/06325 ,  H01J2237/0653 ,  H01J2237/0656

Abstract: Provided is a charged particle beam apparatus, which can emit a stable electron beam, having high brightness and a narrow energy width. The charged particle beam apparatus comprises a field emission electron source, electrodes for applying an electric field to the field emission electron source, and a vacuum exhaust unit for keeping the pressure around the field emission electron source at 1 10−8 Pa or less. The apparatus is so constituted as to use such one of the electron beams emitted as has an electron-beam-center radiation angle of 1×10−2sr or less, and to use the electric current thereof, the second order differentiation of which is negative or zero with respect to the time, and which reduces at a rate of 10% or less per hour. The charged particle beam apparatus further comprises a heating unit for the field emission electron source, and a detection unit for the electric current of the electron beam. The field emission electron source is repeatedly heated to keep the electric current of the electron beam to be emitted, at a predetermined value or higher.

Abstract translation: 提供一种带电粒子束装置，其能够发射具有高亮度和窄能量宽度的稳定电子束。 带电粒子束装置包括场发射电子源，用于向场发射电子源施加电场的电极和用于将场致发射电子源周围的压力保持在10×10 8 Pa以下的真空排气单元。 该装置构成为使用发射的电子束中心辐射角为1×10-2sr以下的电子束，并使用其电流，其二阶微分为负 或相对于时间为零，并以每小时10％或更少的速率减少。 带电粒子束装置还包括用于场发射电子源的加热单元和用于电子束电流的检测单元。 重复加热场致发射电子源以使电子束的电流保持在规定值以上。

公开(公告)号：US20120126697A1

公开(公告)日：2012-05-24

申请号：US13332732

申请日：2011-12-21

Applicant: Artush A. ABGARYAN ,  Eli LEVI

Inventor： Artush A. ABGARYAN ,  Eli LEVI

IPC: H01J29/56

CPC classification number: H01J29/62 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/18 ,  H01J35/14 ,  H01J37/063 ,  H01J37/065 ,  H01J37/3174 ,  H01J2237/0492 ,  H01J2237/0656 ,  H01J2237/28

Abstract: System that focuses electron beams in an electro-static area to a laminar flow of electrons with uniform distribution of current density and extraordinary demagnification includes a housing having a first interior portion and a second interior portion electrically insulated from the first interior portion. The second interior portion has an electric field-free space. An electrode system is disposed in the first interior portion and includes a cathode assembly and at least one anode assembly. The cathode assembly generates an electron beam that passes through each anode assembly and then into the electric field-free space in the second interior portion. A position of a crossover point on a longitudinal axis maybe regulated by varying dimensions of a substantially cylindrical portion of the anode assembly and a substantially cylindrical portion of a near-cathode electrode assembly.

Abstract translation: 将静电区域中的电子束聚焦到具有均匀分布的电流密度和非常缩小的电子层流的系统包括具有与第一内部部分电绝缘的第一内部部分和第二内部部分的壳体。 第二内部部分具有无电场的空间。 电极系统设置在第一内部部分中并且包括阴极组件和至少一个阳极组件。 阴极组件产生通过每个阳极组件然后进入第二内部部分中的无电场空间的电子束。 横轴上的交叉点的位置可以通过阳极组件的基本圆柱形部分的大小和近阴极电极组件的基本上圆柱形的部分来调节。

公开(公告)号：US08084929B2

公开(公告)日：2011-12-27

申请号：US12769393

申请日：2010-04-28

Applicant: Artush A. Abgaryan ,  Eli Levi

Inventor： Artush A. Abgaryan ,  Eli Levi

IPC: H01J29/46

CPC classification number: H01J29/62 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/18 ,  H01J35/14 ,  H01J37/063 ,  H01J37/065 ,  H01J37/3174 ,  H01J2237/0492 ,  H01J2237/0656 ,  H01J2237/28

Abstract: System that focuses electron beams in an electro-static area to a laminar flow of electrons with uniform distribution of current density and extraordinary demagnification includes a body that defines a boundary for an electric field, a field-forming cathode electrode system, a focusing electrode system, and at least one anode electrode system in the electro-static section and a second electric field-free section including an adjustable screen system arranged in an interior of the body. The field-forming near-cathode electrode system includes a cathode electrically connected to a flat part and a curvilinear part electrically connected to a cylindrical part. The anode electrode system includes an opening part, an anode electrically connected to a flat part and a curvilinear part electrically connected to a cylindrical part which is similar or identical to and symmetrical with the cathode electrode system. The system parameters are calculated and created due to the CGMR conceptual method.

Abstract translation: 将静电区域中的电子束聚焦到具有均匀分布的电流密度和非常缩小的电子层流的系统包括限定电场边界的体，场形成阴极电极系统，聚焦电极系统 以及电静电部分中的至少一个阳极电极系统和包括布置在主体内部的可调节屏幕系统的第二无电场部分。 场形成阴极电极系统包括电连接到平坦部分的阴极和与圆筒部分电连接的曲线部分。 阳极电极系统包括开口部分，电连接到平坦部分的阳极和电连接到与阴极电极系统相似或相似的圆柱形部分的曲线部分。 由于CGMR的概念方法，系统参数被计算和创建。

公开(公告)号：US20030191899A1

公开(公告)日：2003-10-09

申请号：US10103583

申请日：2002-03-21

Inventor： Louis Edward Evans

IPC: G01K011/30

CPC classification number: H01J37/243 ,  H01J37/02 ,  H01J2237/0656 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30433 ,  H01J2237/31701

Abstract: A method determines ion beam emittance, i.e., the beam current density based on position and angle, in a charged particle transport system. The emittance is determined from variations in the current measured in a slot Faraday or sample cup as a straight-edged mechanism traverses the beam upstream of the sample cup in a direction perpendicular to the orientation of the slot Faraday and the straight-edged mechanism, which also can be the direction in which the emittance is determined. An expression in terms of the beam current density can be determined for the derivative of the sample current with respect to position of the mechanism. Depending on the angular spread of the beam reaching the sample cup, the density can be determined directly from the derivative, or can be determined using a least squares analysis of the derivative over a range of mechanism positions.

Abstract translation: 一种方法在带电粒子传输系统中基于位置和角度确定离子束发射率，即束电流密度。 发射率是根据在法拉第槽或样品杯中测量的电流的变化来确定的，因为直边机构沿垂直于槽法拉第方向和直边机构的方向穿过样品杯上游的光束，其中 也可以是确定发光度的方向。 关于束流电流密度的表达式可以针对机构位置的样本电流的导数来确定。 取决于到达样品杯的光束的角度扩展，密度可以直接从导数确定，或者可以使用衍生物在机械位置范围内的最小二乘法分析来确定。

公开(公告)号：WO2012047882A3

公开(公告)日：2012-06-14

申请号：PCT/US2011054759

申请日：2011-10-04

Applicant: VEECO INSTR INC ,  KAMEYAMA IKUYA

Inventor： KAMEYAMA IKUYA

IPC: C23C14/46 ,  C23C14/34

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: An ion beam system (100) includes a grid assembly (300) having a substantially elliptical pattern of holes to steer an ion beam (108) comprising a plurality of beamlets to generate an ion beam (108), wherein the ion current density profile (700, 900, 1100, 1200) of a cross-section of the ion beam (108) is non-elliptical. The ion current density profile (700, 900, 1100, 1200) may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam (108). Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam (108). In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section of the ion beam (108). Directing the ion beam (108) on a rotating destination work-piece (104) generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece (104).

Abstract translation: 一种离子束系统（100）包括具有大致椭圆形孔图案的栅格组件（300），以操纵包括多个小束的离子束（108）以生成离子束（108），其中离子电流密度分布 所述离子束（108）的横截面的横截面（700,700,900,1100,1200）是非椭圆形的。 离子电流密度分布图（700,900,1100,1200）可以具有关于离子束（108）的横截面的两个正交轴中的一个对称的单个峰。 或者，关于离子束（108）的横截面的两个正交轴中的另一个，单峰可以是不对称的。 在另一个实施方式中，离子电流密度分布可以在离子束（108）的横截面的两个正交轴中的一个的相对侧上具有两个峰。 将离子束（108）引导到旋转目标工件（104）上产生与目标工件（104）的中心等距的每个点处的基本均匀的旋转集成平均离子电流密度。

公开(公告)号：WO2012047914A2

公开(公告)日：2012-04-12

申请号：PCT/US2011/054800

申请日：2011-10-04

Applicant: VEECO INSTRUMENTS, INC. ,  KAMEYAMA, Ikuya

Inventor： KAMEYAMA, Ikuya

IPC: C23C14/46 ,  C23C14/34

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: A grid assembly (114, 300) coupled to a discharge chamber of an ion beam source (102) is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly 114, 300) includes at least a first and a second grid (302, 304) with a substantially circular pattern of holes, wherein each grid (302, 304) comprises holes positioned adjacent to one another. A plurality of the holes of the second grid (304) is positioned with offsets relative to corresponding holes in the first grid (302). Due to the offsets in the holes in the second grid (304), ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids 302, 304), and the distance between the grids (302, 304).

Abstract translation: 耦合到离子束源（102）的放电室的栅格组件（114,300）被配置用于以圆形不对称地确定的转向角度控制从放电室发射的离子束。 网格组件114,300）包括具有基本圆形图案的孔的至少第一和第二格栅（302,304），其中每个格栅（302,304）包括彼此相邻定位的孔。 所述第二格栅（304）的多个孔相对于所述第一格栅（302）中的对应的孔以偏移定位。 由于第二格栅（304）中的孔中的偏移，穿过偏移孔的离子被静电吸引到下游偏移孔的最近的圆周部分。 因此，通过偏移孔的离子的轨迹被改变。 小梁通过预定的不对称角度转向。 预定的转向角取决于孔偏移，施加到网格302,304的电压）和网格（302,304）之间的距离。

公开(公告)号：US20230352272A1

公开(公告)日：2023-11-02

申请号：US18013145

申请日：2021-10-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Juline SHOEB ,  Alexander Miller PATERSON

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32724 ,  H01J37/32091 ,  H01J2237/2007 ,  H01J2237/0656 ,  H01L21/6833

Abstract: A substrate processing system includes a substrate support, N RF sources and a controller. The substrate support is arranged in a processing chamber, supports a substrate on an upper surface thereof, and includes: a baseplate made of electrically conductive material and M electrodes disposed in the baseplate. Each of the N RF sources supplies a respective RF signal to one or more of the M electrodes, where: M and N are integers greater than or equal to two; each of the respective RF signals is supplied to a different set of the M electrodes; and each of the sets includes a different one or more of the M electrodes. The controller causes one or more coils to strike and maintain plasma in the processing chamber independently of the N RF sources and separately controls voltage outputs of the N RF sources to adjust the plasma in the processing chamber.