公开(公告)号：KR101689916B1

公开(公告)日：2016-12-26

申请号：KR1020127006016

申请日：2010-08-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 자오지안핑 ,  첸리 ,  펑크메리트 ,  노자와도시히사

IPC: H01L21/3213 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32192 ,  H01L21/31116 ,  H01L21/32137

Abstract: 본발명은, 중력에의한가스확산분리기술을통하여플라즈마를발생하는것을이용하는기판처리장치및 기판처리방법을제공할수 있다. 이러한기판처리장치및 기판처리방법에서는, 중력값(즉, 가스상성분의분자량과기준분자량간의비)이서로다른불활성가스와프로세스가스를포함하는가스를추가하고사용함으로써, 2구역혹은다구역플라즈마가형성될수 있고, 이 2구역혹은다구역플라즈마에서는, 중력에의한확산이서로다르기때문에, 한종류의가스가플라즈마발생영역부근에많이구속될수 있으며, 다른종류의가스가상기한 종류의가스로부터크게분리될수 있고상기한 종류의가스보다웨이퍼프로세스영역에더 근접하게구속되어있다.

Abstract translation: 本发明可以提供使用通过重力引起的气体扩散分离技术的等离子体生成来处理衬底的装置和方法。 通过添加或使用气体，包括不同重量的惰性气体和工艺气体（即气态成分的分子量与参考分子量之间的比例），可以形成两区或多区等离子体，其中一种 气体可以在等离子体产生区域附近受到高度约束，并且由于差分重力感应扩散，另一种气体可以与前述气体大大分离，并且比上述气体更为接近晶片处理区域。

公开(公告)号：KR1020120117872A

公开(公告)日：2012-10-24

申请号：KR1020127021404

申请日：2011-01-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 첸리 ,  펑크메리트

IPC: H05H3/00 ,  H01L21/205 ,  H01J37/32

CPC classification number: H01L21/32139 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28123 ,  G03F7/2065 ,  H05H1/46

Abstract: 본 발명은, 포토레지스트층의 에칭 내성을 향상시키기 위해 스위쳐블 준중성빔 시스템을 이용하여 실시간으로 기판을 처리하는 장치 및 방법을 제공할 수 있다. 또한, 게이트 및/또는 스페이서 임계 치수(CDs)를 더 정밀하게 제어하고, 게이트 및/또는 스페이서 CD 균일성을 제어하며, 선 에지 조도(LER) 및 선폭 조도(LWR)를 제거하기 위해, 개선된 포토레지스트층이 에칭 절차에서 이용될 수 있다.

Abstract translation: 本发明可以提供使用可切换的准中性束系统实时地处理衬底以提高光致抗蚀剂层的耐蚀刻性的装置和方法。 此外，改进的光致抗蚀剂层可以用于蚀刻过程中以更准确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线 宽度粗糙度（LWR）。

公开(公告)号：KR101098141B1

公开(公告)日：2011-12-26

申请号：KR1020077007996

申请日：2005-08-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 첸리 ,  티안케이즈홍 ,  마츠모토나오키

IPC: H05H1/24 ,  H05H1/34 ,  H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32192

Abstract: 본발명의표면파플라즈마(SWP) 소스는플라즈마에인접한전자기파방사부(launcher)의플라즈마표면에표면파를발생시킴으로써소정의전자기파모드의전자기에너지를플라즈마에결합하도록구성된전자기(EM)파방사부를구비한다. 파워결합시스템이상기전자기파방사부에결합되고, 상기전자기에너지를상기전자기파방사부에공급하여상기플라즈마를형성하도록구성된다. 상기전자기파방사부의상기플라즈마표면에결합된커버플레이트가상기전자기파방사부를상기플라즈마로부터보호한다.

公开(公告)号：KR1020100015515A

公开(公告)日：2010-02-12

申请号：KR1020097021283

申请日：2008-03-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 순다라라잔라드하 ,  첸리 ,  펑크메릿

IPC: H01L21/00 ,  H01L21/687 ,  C23C16/458

CPC classification number: H01L21/68735 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/68714

Abstract: Control of radial or non-radial temperature distribution is controlled across a substrate during processing to compensate for non-uniform effects, including non-uniformities arising from system or process. Temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck (substrate support table 20, 20a) to vary heat conduction across the wafer. Ports (26, 26a) in the support table (20, 20a) are grouped, and gas to or from the groups is separately controlled by different valves (32) responsive to a controller (35) that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities. Wafer deformation is affected by separately controlling the pressure of the backside gas at different ports (26, 26a) to control the local force exerted on the backside of the substrate, by separately dynamically controlling valves (32) affecting gas flow to a port (26, 26a) and ports (26, 26a) surrounding said port (26, 26a).

Abstract translation: 径向或非径向温度分布的控制在处理过程中跨越衬底进行控制，以补偿不均匀的影响，包括由系统或过程产生的不均匀性。 通过在晶片支撑卡盘（衬底支撑台20,20a）上的不同区域上不同地流动背面气体来改变温度，优选动态地改变，以改变横跨晶片的热传导。 在支撑台（20,20a）中的端口（26,26a）被分组，并且响应于控制器（35），单独地由不同的阀（32）控制到组或从组中的气体，控制器控制每个区域中的气体压力 在空间上优选地动态地控制晶片温度以补偿系统和工艺的不均匀性。 通过分别控制不同端口（26,2b）处的背侧气体的压力来控制施加在基板的背面上的局部力，通过分别动态地控制影响到端口（26）的气体流动的阀（32）来影响晶片变形 ，26a）和围绕所述端口（26,2a）的端口（26,26a）。

公开(公告)号：KR1020080101794A

公开(公告)日：2008-11-21

申请号：KR1020080045722

申请日：2008-05-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 티안카이중 ,  첸리 ,  펑크머릿

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

Abstract: A method and system for introducing process fluid through a chamber component are provided to prevent the electrical failure or discharge within the dielectric member by introducing the process gas through the dielectric member. The chamber component comprises the chamber device which has the second side on the process side and the first side on the supply side of the chamber device. The process side is faced with the supply side. The chamber component comprises the conduit extended from the supply side through the chamber device as the process side. The conduit comprises the entrance which accommodates the process fluid and the exit which distribute the process fluid. The conduit is helix.

Abstract translation: 提供了一种用于通过腔室部件引入过程流体的方法和系统，以通过将工艺气体引入电介质构件来防止电介质构件内的电气故障或放电。 腔室部件包括腔室装置，其在处理侧具有第二侧，在腔室装置的供给侧具有第一侧。 处理方面面临着供应方面。 腔室部件包括作为加工侧的从供给侧延伸穿过腔室装置的导管。 导管包括容纳过程流体的入口和分配过程流体的出口。 导管是螺旋。

公开(公告)号：KR1020060028636A

公开(公告)日：2006-03-30

申请号：KR1020057022970

申请日：2004-05-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 첸리 ,  감바라히로미츠 ,  이와마노부히로 ,  코메이키 ,  모치키히로마사 ,  하기하라마사아키

IPC: H01L21/3065

CPC classification number: H01L21/31122

Abstract: A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise Hf02. The method comprises elevating the temperature of the substrate above 200 C (i.e., typically of order 400 C), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of Hf02 relative to Si and Si02.

Abstract translation: 描述了在等离子体处理系统中蚀刻衬底上的高k电介质层的方法。 高k电介质层可以例如包括HfO 2。 该方法包括将衬底的温度升高到高于200℃（即，典型地为400℃），引入包含含卤素气体的工艺气体，从处理气体点燃等离子体，以及将衬底暴露于等离子体。 工艺气体可以进一步包括还原气体，以便提高HfO 2相对于Si和SiO 2的蚀刻速率。