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公开(公告)号：KR1020110049641A
公开(公告)日：2011-05-12
申请号：KR1020100053243
申请日：2010-06-07
Applicant: 한국전자통신연구원
IPC: H01L33/02
Abstract: PURPOSE: A GaN type led device and manufacturing method thereof are provided to control an area where an amorphous layer is formed, thereby reducing stress which can occur in the amorphous layer. CONSTITUTION: An amorphous layer(200) is formed on a substrate. A unit LED cell area is defined on the amorphous layer. A width pattern separates the unit LED cell area on the amorphous layer. An amorphous layer is etched according to the width pattern. A light emitting structure(500) is formed on a substrate from which the amorphous layer is etched. A buffer layer(400) is formed on the substrate before the light emitting structure is formed to form a light emitting structure on the buffer layer.
Abstract translation: 目的：提供一种GaN型LED器件及其制造方法，以控制形成非晶层的区域，从而减少可能在非晶层中发生的应力。 构成：在衬底上形成非晶层（200）。 在非晶层上定义单位LED电池区域。 宽度图案分离非晶层上的单元LED单元面积。 根据宽度图案蚀刻非晶层。 在非晶层被蚀刻的基板上形成发光结构（500）。 在形成发光结构之前在衬底上形成缓冲层（400）以在缓冲层上形成发光结构。
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公开(公告)号：KR1020080050942A
公开(公告)日：2008-06-10
申请号：KR1020070046618
申请日：2007-05-14
Applicant: 한국전자통신연구원
IPC: H01L33/16
Abstract: A nitride semiconductors based light emitting device is provided to improve the uniformity of light emitting at a light emitting surface of a light emitting device by effectively using a quasi-2-dimensional free electron and free hole gas. A buffer layer(120) is grown on a substrate(110). A first p-type contact layer(130a) is grown on the buffer layer. A second p-type contact layer(130b) is grown on the first p-type contact layer. A first hole diffusion layer(140a) is formed on the second p-type contact layer. A second hole diffusion layer(140b) is grown on the first hole diffusion layer. A light emitting active region is grown on the second hole diffusion layer. A second electron diffusion layer(160a) is grown on the light emitting active region. A first electron diffusion layer(160b) is grown on the second electron diffusion layer. A second n-type contact layer(170a) is grown on the first electron diffusion layer. A first n-type contact layer(170b) is grown on the second n-type contact layer.
Abstract translation: 提供了一种基于氮化物半导体的发光器件，以通过有效地使用准二维自由电子和自由空穴气体来改善发光器件的发光表面发光的均匀性。 在衬底（110）上生长缓冲层（120）。 在缓冲层上生长第一p型接触层（130a）。 在第一p型接触层上生长第二p型接触层（130b）。 在第二p型接触层上形成第一孔扩散层（140a）。 在第一孔扩散层上生长第二孔扩散层（140b）。 在第二孔扩散层上生长发光有源区。 在发光有源区域上生长第二电子扩散层（160a）。 第一电子扩散层（160b）在第二电子扩散层上生长。 在第一电子扩散层上生长第二n型接触层（170a）。 在第二n型接触层上生长第一n型接触层（170b）。
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公开(公告)号：KR100696194B1
公开(公告)日：2007-03-20
申请号：KR1020050111276
申请日：2005-11-21
Applicant: 한국전자통신연구원
Inventor： 배성범
IPC: H01L33/20
Abstract: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to enhance external quantum efficiency and to reduce the area of a metal electrode by forming a through hole in a P-type electrode. An n-type electrode(112), an active layer(113) and a p-type electrode(114) are sequentially stacked on a substrate(110). An open region is formed for contacting an n-type metal contact layer to the n-type electrode. A hole(118) is formed to elongate the n-type electrode through the p-type electrode and the active layer. A reflective layer(119) is formed at the bottom of the hole. An n-type metal contact layer is formed on the open region. A transparent metal film is formed on the p-type electrode. A p-type metal contact layer is formed on the transparent metal film.
Abstract translation: 提供一种氮化物半导体发光器件及其制造方法，以通过在P型电极中形成通孔来提高外部量子效率和减小金属电极的面积。 依次将n型电极（112），有源层（113）和p型电极（114）层叠在基板（110）上。 形成用于使n型金属接触层与n型电极接触的开放区域。 形成孔（118）以通过p型电极和有源层来延长n型电极。 反射层（119）形成在孔的底部。 在开放区域上形成n型金属接触层。 在p型电极上形成透明金属膜。 在透明金属膜上形成p型金属接触层。
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公开(公告)号：KR100466543B1
公开(公告)日：2005-01-15
申请号：KR1020020074420
申请日：2002-11-27
Applicant: 한국전자통신연구원
IPC: H01L29/772
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of embodying a SAW filter using an Sl(Semi Insulating)-GaN layer of an HEMT(High Electron Mobility Transistor) for integrating the devices on a unit wafer. CONSTITUTION: An HEMT device is manufactured by depositing an SI GaN layer(12) and an AlxGa1-xN layer(13) on a semiconductor substrate(11). The first predetermined region of the AlxGa1-xN layer is etched. An FET(Field Effect Transistor) device is manufactured by forming FET electrodes(14a,14b) on the predetermined region of the AlxGa1-xN layer. The second predetermined region of the AlxGa1-xN layer is etched for exposing the SI GaN layer. Then, a SAW filter is manufactured by forming SAW filter electrodes(15) on the exposed SI-GaN layer.
Abstract translation: 目的：提供一种用于制造半导体器件的方法，其能够体现使用HEMT（高电子迁移率晶体管）的S1（半绝缘）-GaN层的SAW滤波器，用于将器件集成在单元晶片上。 构成：通过在半导体衬底（11）上沉积SI GaN层（12）和Al x Ga 1-x N层（13）来制造HEMT器件。 AlxGa1-xN层的第一预定区域被蚀刻。 通过在AlxGa1-xN层的预定区域上形成FET电极（14a，14b）来制造FET（场效应晶体管）器件。 蚀刻Al x Ga 1-x N层的第二预定区域以暴露SI GaN层。 然后，通过在暴露的SI-GaN层上形成SAW滤波器电极（15）来制造SAW滤波器。
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公开(公告)号：KR1020040049744A
公开(公告)日：2004-06-12
申请号：KR1020020077599
申请日：2002-12-07
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: A HFET(hetero-structure field effect transistor) is provided to improve mobility and saturation velocity of free electrons by decreasing a possibility that the free electrons exist in an AlGaN layer while not greatly varying the density of free electrons induced to a quasi two-dimensional electron channel. CONSTITUTION: The first semiconductor layer(104) is formed on a substrate(100). The second semiconductor layer(106) is formed on the first semiconductor substrate, having a band gap different from that of the first semiconductor layer. The third semiconductor layer(108) is formed on the second semiconductor layer, having a band gap different from that of the second semiconductor layer. A gate(110) is formed on the third semiconductor layer. A source/drain electrode(112) ohmic-contacted by metal is formed on the third semiconductor layer at both sides of the gate. The second semiconductor layer has a band gap greater than the first semiconductor layer. The third semiconductor layer has a band gap that is greater than the first semiconductor layer and is smaller than the second semiconductor layer.
Abstract translation: 目的：提供HFET（异质结构场效应晶体管），通过降低自由电子存在于AlGaN层中而不会大大改变自由电子的密度，从而提高自由电子的迁移率和饱和速度 三维电子通道。 构成：第一半导体层（104）形成在基板（100）上。 第二半导体层（106）形成在第一半导体衬底上，具有与第一半导体层的带隙不同的带隙。 第三半导体层（108）形成在第二半导体层上，具有与第二半导体层的带隙不同的带隙。 在第三半导体层上形成栅极（110）。 在栅极两侧的第三半导体层上形成由金属欧姆接触的源极/漏极（112）。 第二半导体层具有大于第一半导体层的带隙。 第三半导体层具有比第一半导体层大的带隙，并且小于第二半导体层。
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Patent Agency Ranking
公开(公告)号：KR102261735B1
公开(公告)日：2021-06-09
申请号：KR1020160090997
申请日：2016-07-18
Applicant: 한국전자통신연구원
IPC: H01L29/737 , H01L29/08 , H01L29/66 , H01L29/417
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公开(公告)号：KR101878931B1
公开(公告)日：2018-07-17
申请号：KR1020150088941
申请日：2015-06-23
Applicant: 한국전자통신연구원
IPC: H01L29/872 , H01L29/47
CPC classification number: H01L21/0228 , H01L23/291 , H01L23/3178 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L29/872
Abstract: 반도체소자의제1 질화물반도체층은기판상에제공되고, 제2 질화물반도체층은제1 질화물반도체층상에제공되고, 제1 오믹메탈및 제2 오믹메탈은제2 질화물반도체층상에제공되고, 리세스영역은제1 오믹메탈과제2 오믹메탈사이의제2 질화물반도체층내에제공되고, 패시베이션층은제1 오믹메탈의측면및 리세스영역의하부면과측면을덮고, 쇼트키전극은제1 오믹메탈상에제공되고, 리세스영역의내부로연장된다.
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公开(公告)号：KR1020170043985A
公开(公告)日：2017-04-24
申请号：KR1020160025207
申请日：2016-03-02
Applicant: 한국전자통신연구원
Abstract: 발광다이오드를제조하는방법이제공된다. 상기발광다이오드의제조방법은성장기판상에버퍼층, 초격자층, n형반도체층, 활성층, 및 p형반도체층을차례로형성하되, 상기초격자층은교대로그리고반복적으로적층된제1 및제2 서브층들을포함하는것, 상기성장기판의하면으로부터상기초격자층까지연장되는비아홀을형성하는것, 및상기비아홀 내에 n형전극을형성하는것을포함한다. 나아가, 상기비아홀을형성하는것은유도플라즈마분광법을이용하여상기비아홀의바닥면의위치를파악하는것을포함한다.
Abstract translation: 提供了一种制造发光二极管的方法。 用于制造发光二极管的方法是生长衬底的缓冲层，所述超晶格层，所述n型半导体层，有源层和p型，但半导体层，然后，将基础网格层交替和重复的层叠体在第一mitje第二子 形成从生长衬底的表面延伸到栅格层下面的相的通孔以及在通孔中形成n型电极。 此外，形成通孔包括使用感应等离子体光谱来定位通孔的底面。
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公开(公告)号：KR101695306B1
公开(公告)日：2017-01-11
申请号：KR1020130152420
申请日：2013-12-09
Applicant: 한국전자통신연구원
IPC: H01L33/00 , H01L33/32 , H01L21/205 , H01L21/02 , H01L21/28
Abstract: 본발명은질화물반도체의제조방법에관한것으로, 반응기내에기판을준비하는것 및상기기판상에에피층을형성하는것을포함하고, 상기에피층을형성하는것은펄스플로우성장법을수행하는것을포함하되, 상기펄스플로우성장법은상기기판상에 5족소스물질을공급하는것 및상기기판상에 3족소스물질을공급하는것을포함하고, 상기 5족및 3족소스물질들은상기반응기내에교대로공급되되, 상기 5족소스물질은히드라진(hydrazine) 계열의물질을포함하는질화물반도체의제조방법에제공된다.
Abstract translation: 本发明涉及一种用于制造氮化物半导体的方法，包括在反应器中制备衬底并在衬底上形成外延层的步骤。 形成外延层时进行脉冲流生长方法; 脉冲流生长方法包括在基板上提供3-5组源材料; 将组3-5材料交替地供应到反应器的内部; 5组源材料包括肼类材料。
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