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公开(公告)号：KR100803950B1
公开(公告)日：2008-02-18
申请号：KR1020060093970
申请日：2006-09-27
Applicant: 한국화학연구원
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01L21/02554 , C23C16/513 , H01L21/0262
Abstract: A method for forming a p-type zinc oxide layer using plasma enhanced metal organic chemical vapor deposition is provided to adjust a doping concentration by controlling a dose of an organic metal compound of a group-V element. After a substrate(20) is put in a reactor(10) and then an oxygen source and an argon gas are inputted to the reactor, an RF power is applied to the reactor to produce a plasma in the reactor. A zinc precursor and a group-V precursor as a dopant are inputted to the reactor to form a p-type zinc oxide layer on the substrate. The heat treatment is performed on a substrate with the p-type zinc oxide layer. When the p-type zinc oxide layer is formed, a temperature of the substrate is in the range of 200 to 400 degrees centigrade.
Abstract translation: 提供了使用等离子体增强金属有机化学气相沉积形成p型氧化锌层的方法，通过控制V族元素的有机金属化合物的剂量来调节掺杂浓度。 将基板（20）放入反应器（10）中，然后将氧源和氩气输入到反应器中，向反应器施加RF功率以在反应器中产生等离子体。 将锌前体和作为掺杂剂的V族前体输入到反应器中，以在衬底上形成p型氧化锌层。 在具有p型氧化锌层的基板上进行热处理。 当形成p型氧化锌层时，基板的温度在200至400摄氏度的范围内。
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公开(公告)号：KR100774614B1
公开(公告)日：2007-11-12
申请号：KR1020060042840
申请日：2006-05-12
Applicant: 한국화학연구원
IPC: H01L21/205 , B82B3/00 , B82Y40/00
CPC classification number: H01L21/02603 , H01L21/02554 , H01L21/0262
Abstract: A method for manufacturing a zinc oxide nano needle structure is provided to grow the zinc oxide nano needle structure without using a catalyst by changing a temperature of a substrate in two steps in a chemical vapor deposition process. An SAM(Self-Assembled Molecule) film is patterned on a substrate. A zinc source and an oxygen source are introduced on the substrate and a CVD(Chemical Vapor Deposition) process is performed on the substrate except for a region for the SAM, so that a zinc oxide seed layer is formed. A CVD process is performed on the zinc oxide seed layer, so that a zinc oxide nano needle is vertically grown on the zinc oxide seed layer. The SAM is performed by a micro-contact printing scheme.
Abstract translation: 提供了一种制造氧化锌纳米针结构的方法，用于通过在化学气相沉积工艺中两步改变衬底的温度来生长氧化锌纳米针结构而不使用催化剂。 将SAM（自组装分子）膜图案化在衬底上。 在基板上引入锌源和氧源，在除了SAM的区域之外的基板上进行CVD（化学气相沉积）处理，形成氧化锌种子层。 在氧化锌种子层上进行CVD处理，使氧化锌纳米针在氧化锌种子层上垂直生长。 SAM通过微接触打印方案执行。
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公开(公告)号：KR1020070024883A
公开(公告)日：2007-03-08
申请号：KR1020050080464
申请日：2005-08-31
Applicant: 한국화학연구원
Inventor： 이영국
IPC: C30B29/22
Abstract: A method for fabricating a manganese-implanted zinc oxide single crystal is provided to increase the quantity of manganese implanted into a zinc oxide single crystal by adding water-soluble salt of manganese to a conventional solution used to be used as a mineralizer. Under the existence of a mixed hydrothermal solution including KOH, LiOH and Mn as a mineralizer, a Mn-implanted zinc oxide single crystal is fabricated by a hydrothermal method while using manganese oxide, a zinc oxide powder sintering material and a zinc oxide seed crystal. A solution having saturated zinc oxide can be used as a mineralizer.
Abstract translation: 提供了一种制造锰注入的氧化锌单晶的方法，以通过将锰的水溶性盐添加到用作矿化剂的常规溶液中来增加注入到氧化锌单晶中的锰的量。 在含有KOH，LiOH和Mn作为矿化剂的混合水热溶液的存在下，通过水热法制造Mn注入的氧化锌单晶，同时使用氧化锰，氧化锌粉末烧结材料和氧化锌晶种。 可以使用具有饱和氧化锌的溶液作为矿化剂。
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公开(公告)号：KR1020060130976A
公开(公告)日：2006-12-20
申请号：KR1020050050745
申请日：2005-06-14
Applicant: 한국화학연구원
IPC: H01L21/205
CPC classification number: H01L21/02189 , H01L21/02271
Abstract: A method for manufacturing a ZrO thin film is provided to prevent carbon contamination and to restrain the generation of a silicon oxide layer by using Zr alone without an additional supply of oxygen source. A ZrO thin film is formed by performing an MOCVD(Metal Organic Chemical Vapor Deposition) using Zr compound as a precursor material. The predetermined Zr compound is represented by a predetermined chemical formula. The predetermined Zr compound is used for forming the ZrO thin film without an additional oxygen source. The predetermined Zr compound is kept in a predetermined temperature range of room temperature to 90 ‹C.
Abstract translation: 提供一种制造ZrO薄膜的方法，以防止碳污染，并且通过单独使用Zr而不需要额外的氧源供应来抑制氧化硅层的产生。 通过使用Zr化合物作为前体材料进行MOCVD（金属有机化学气相沉积）来形成ZrO薄膜。 预定的Zr化合物由预定的化学式表示。 预定的Zr化合物用于形成不含附加氧源的ZrO薄膜。 将预定的Zr化合物保持在室温至90℃的预定温度范围内。
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45.发明授权
公开(公告)号：KR100643637B1
公开(公告)日：2006-11-10
申请号：KR1020050006774
申请日：2005-01-25
Applicant: 한국화학연구원
IPC: C01G53/04
Abstract: 본 발명은 하기 화학식 1의 니켈 아미노알콕사이드 선구 물질을 니켈의 원료 화합물로 사용하여 원자층 침착법 (atomic layer deposition, ALD)으로 니켈 산화물 박막을 제조하는 방법에 관한 것으로, 본 발명의 방법에 따르면 기존의 원자층 침착법에 비해 더 온화한 공정 조건에서 품질이 좋은 니켈 산화물 박막을 얻을 수 있다.
상기 식에서, m은 1 내지 3 범위의 정수고, R
1 ,
R
2 ,
R
3 및 R
4 는 각각 독립적으로 C
1 -C
4 선형 또는 분지형 알킬기다.-
Patent Agency Ranking
公开(公告)号：KR100627633B1
公开(公告)日：2006-09-25
申请号：KR1020050058349
申请日：2005-06-30
Applicant: 한국화학연구원
IPC: H01L21/20
Abstract: 본 발명은 니켈 산화물 박막을 원자층 침착법으로 제조하여 차세대 비휘발성 메모리 소자인 RRAM의 니켈 산화막 층을 형성하는 방법에 관한 것으로, 본 발명의 방법에 따르면 기존의 물리적 침착 방법으로 제조하는 니켈 산화물 박막에 비하여 우수한 박막 특성과 저항 전환(resistance switching) 현상을 보이는 품질이 좋은 니켈 산화물 박막을 얻을 수 있어 이를 RRAM 소자로 잘 응용할 수 있다.
니켈 산화막, RRAM, 원자층 침착법Abstract translation: 本发明已经制备，氧化镍薄膜的原子层沉积方法的方法用于形成RRAM，下一代的非易失性存储器件的氧化镍层，根据本发明的方法中，通过常规的物理沉积方法制备的氧化镍薄膜 可以获得表现出优异的薄膜特性和电阻切换现象并且可以很好地应用于RRAM器件的优质氧化镍薄膜。
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公开(公告)号：KR100582921B1
公开(公告)日：2006-05-24
申请号：KR1020030071026
申请日：2003-10-13
Applicant: 한국화학연구원
Abstract: 본 발명은 구리 및 니켈 금속 나노 입자를 제조하는 방법에 관한 것으로, 본 발명에 따르면 자체 열분해가 가능한 아미노알콕시 금속 착화합물을 선구 물질로 사용하여, 외부로부터 환원제를 넣지 않고, 녹는점이 낮고 비등점이 높으며 배위 가능한 원소를 포함하는 덮개 리간드를 이용하여, 금속 입자의 크기 및 형상을 제어할 수 있다.
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公开(公告)号：KR1020050033737A
公开(公告)日：2005-04-13
申请号：KR1020030069585
申请日：2003-10-07
Applicant: 한국화학연구원
IPC: C07F15/04
CPC classification number: C07F15/045 , C23C16/18
Abstract: Volatile nickel aminoalkoxide complexes, a preparation method thereof and a process for formation of a nickel thin film by using the same compounds are provided, which compounds have high volatility and sufficient thermal stability, and are reduced to nickel by self-pyrolysis without a reducing agent. so that the compounds are useful as a MOCVD(metal organic chemical vapor deposition) precursor for formation of the nickel thin film. The volatile nickel aminoalkoxide complexes represented by formula (1) are provided, wherein m is an integer of 1 to 3; and R and R' are C1-C4 linear or branched alkyl. The volatile nickel aminoalkoxide complexes represented by formula (2) are provided, wherein m is an integer of 1 to 3; n is an integer of 2 to 4; and R and R' are C1-C4 linear or branched alkyl. The method for preparing the volatile nickel aminoalkoxide complexes of formula (1) or (2) comprises a halogenized hexamine nickel compound of Ni(NH3)6X2 with an alkali metal salt of aminoalkoxide of MOCR'2(CH2)mNR2 or MOCR'2(CH2)mO(CH2)nNR2, wherein X is Cl, Br or I; and M is Li or Na. The process for formation of the nickel thin film comprises growing the nickel thin film by using the volatile nickel aminoalkoxide complexes of formula (1) or (2) as a precursor at 250 to 350 deg. C.
Abstract translation: 提供挥发性镍氨基醇氧化物络合物，其制备方法和通过使用相同化合物形成镍薄膜的方法，该化合物具有高挥发性和足够的热稳定性，并且通过自热解而不用还原剂还原成镍 。 使得这些化合物可用作用于形成镍薄膜的MOCVD（金属有机化学气相沉积）前体。 提供由式（1）表示的挥发性镍氨基醇氧化物络合物，其中m为1至3的整数; 并且R和R'是C 1 -C 4直链或支链烷基。 提供由式（2）表示的挥发性镍氨基醇盐络合物，其中m为1至3的整数; n为2〜4的整数， 并且R和R'是C 1 -C 4直链或支链烷基。 制备式（1）或（2）的挥发性镍氨基醇氧化物配合物的方法包括Ni（NH 3）6 X 2的卤化六甲基镍化合物与MOCR'2（CH2）mNR2或MOCR'2（CH2）mNR2的氨基醇盐的碱金属盐 CH2）mO（CH2）nNR2，其中X是Cl，Br或I; M为Li或Na。 形成镍薄膜的方法包括使用式（1）或（2）的挥发性镍氨基醇氧化物配合物作为前体在250至350℃下生长镍薄膜。 C。
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49.发明公开
公开(公告)号：KR1020050019400A
公开(公告)日：2005-03-03
申请号：KR1020030057134
申请日：2003-08-19
Applicant: 한국화학연구원
IPC: C23C16/00
CPC classification number: C23C16/409 , C07F3/003 , C07F7/28 , C23C16/4485 , C23C16/56 , Y10S261/65
Abstract: PURPOSE: To provide a method for preparing stoichiometric barium strontium titanate thin films of high quality by direct liquid injection metal organic chemical vapor deposition under the milder conditions using organic complexes of Ba, Sr and Ti that are capable of being vaporized together as raw materials for mixing since they have similar thermal stability, decomposition characteristics and solubility. CONSTITUTION: In a method for preparing barium strontium titanate(BaxSr1-xTiO3) thin films by direct liquid injection metal organic chemical vapor deposition, the method is characterized in that a mixture of Ba(th)2(tmeea), Sr(thd)2(tmeea) and Ti(thd)2(O¬i Pr)2 $ûthd=2,2,6,6-tetramethylheptanedionate, tmeea=tris£2-(2-methoxyethoxy)ethyl|amine, O¬i Pr=isoproxy$ý is used as raw materials of barium, strontium and titanium, wherein the method comprises the steps of: dissolving the raw materials of barium, strontium and titanium into an organic solvent; transferring the solution to an instantaneous vaporizer heated to a temperature of 200 to 250 deg.C so that the solution is vaporized; and injecting the vaporized solution into a deposition container having pressure of 0.5 to 2.0 torr so that the vaporized solution is deposited on a matrix heated to a temperature of 300 to 500 deg.C, wherein the method further comprises a step of heat treating the deposited matrix in a temperature range of 600 to 800 deg.C, and wherein the raw materials of barium, strontium and titanium are mixed in a ratio of 1 ¢¦ 2:1:5 ¢¦ 10.
Abstract translation: 目的：提供一种通过直接液体注入金属有机化学气相沉积在较温和的条件下制备化学计量的钛酸锶钛酸盐薄膜的方法，使用能够作为原料蒸发的Ba，Sr和Ti的有机络合物 因为它们具有相似的热稳定性，分解特性和溶解度。 构成：在通过直接液体注入金属有机化学气相沉积制备钛酸锶钡（BaxSr1-xTiO3）薄膜的方法中，该方法的特征在于Ba（th）2（tmeea），Sr（thd）2 （tmeea）和Ti（thd）2（OiI Pr）2 $ûth= 2,2,6,6-四甲基庚二酮，tmeea =三（2-甲氧基乙氧基）乙基|胺，O-Pr =异丙氧基 ý用作钡，锶和钛的原料，其中所述方法包括以下步骤：将钡，锶和钛的原料溶解在有机溶剂中; 将溶液转移到加热至200〜250℃的瞬时蒸发器，使溶液蒸发; 并将蒸发的溶液注入具有0.5至2.0托的压力的沉积容器中，使得蒸发的溶液沉积在加热至300至500℃的基质上，其中该方法还包括热沉处理沉积 基质在600〜800℃的温度范围内，其中钡，锶和钛的原料以1¢| 2：1：5¢| 10的比例混合。
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公开(公告)号：KR100158264B1
公开(公告)日：1998-11-16
申请号：KR1019950031860
申请日：1995-09-26
Applicant: 한국화학연구원
IPC: C30B7/10
Abstract: [목적] 본원 발명은 균열이 발생하지 않고 종자결정과 성장영역 계면에 불균질한 성장충의 발생의 억제 및 불순물을 저하시키는 자수정의 제조방법을 제공하는 것을 목적으로 한다.
[구성] 분쇄한 천연수정과 천연철광석을 용기에 넣은 것을 오토크레이브하단부(원료 용액부)에 장착하고 그 위에 개공된 대류조절관을 얹은 후 +X축 방향을 30° 절단한(0111)방향의 판상 종자결정을 상단부(결정육성부)에 장착하고 탄산칼슘 수용액에 질산리튬을 첨가하여 조제한 액을 오토클레이브에 채운 후 이를 밀봉하고, 전기 상단부 및 하단부를 고온으로 가열한 상태에서 수열에칭 및 결정을 육성하여 자수정을 얻는다.
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