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公开(公告)号：DE68925459T2
公开(公告)日：1996-09-05
申请号：DE68925459
申请日：1989-10-19
Applicant: IBM
Inventor： BREZOCZKY BLASIUS , CUOMO JEROME J , GUARNIERI C RICHARD , RAMANATHAN KUMBAKONAM V
Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrOx film forming layer. The process is carried out at approximately room temperature. The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown fillm to about 500 DEG C. The rapid thermal anneal step preferably comprises a series of at least five separate pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.
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公开(公告)号：DE69106956D1
公开(公告)日：1995-03-09
申请号：DE69106956
申请日：1991-06-11
Applicant: IBM
Inventor： CUOMO JEROME J , GELORME JEFFREY D , HATZAKIS MICHAEL , LEWIS DAVID A , SHAW JANE M , WHITEHAIR STANLEY J
Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance. The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material. In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity (2) that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.
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公开(公告)号：HU172031B
公开(公告)日：1978-05-28
申请号：HUIE000717
申请日：1975-10-17
Applicant: IBM
Inventor： CUOMO JEROME J , WOODALL JERRY M , ZIEGLER JAMES F
Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.
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公开(公告)号：FR2346821A1
公开(公告)日：1977-10-28
申请号：FR7525826
申请日：1975-08-11
Applicant: IBM
Inventor： CUOMO JEROME J , WOODALL JERRY M , ZIEGLER ET JAMES F
Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.
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公开(公告)号：CA1017435A
公开(公告)日：1977-09-13
申请号：CA193606
申请日：1974-02-27
Applicant: IBM
Inventor： BRASLAU NORMAN , CUOMO JEROME J , HARRIS ERIK P , HOVEL HAROLD J
Abstract: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.
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Patent Agency Ranking
公开(公告)号：CA969436A
公开(公告)日：1975-06-17
申请号：CA83262
申请日：1970-05-21
Applicant: IBM
Inventor： CUOMO JEROME J , MAYADAS ASHOK F , ROSENBERG ROBERT
IPC: C23C14/24 , C04B41/00 , H01L21/00 , H01L21/285 , H01L21/3205 , H01L23/29
Abstract: 1301529 Metallizing non-conductors INTERNATIONAL BUSINESS MACHINES CORP 3 June 1970 [30 June 1969] 26714/70 Heading C7F A substrate of non-conductive material having a first cation and a first anion has introduced into the surface thereof a material having a second cation of valency different from that of the first cation to provide in said surface sites containing unbound ions, and a conductive material having a third cation different from said second cation and having an affinity for the first anion is deposited thereon. The substrate is preferably an oxide, nitride or carbide of Si or Ge, but sulphides, selenides, tellurides, phosphides, and oxidized Si are also referred to. The said second cation may be introduced as a metal or compound by ion-implantation or by forming a few monolayers on the substrate surface, e.g. by vapour deposition, and heating to cause diffusion thereinto; the second cation may be Al, P, Fe, Cr, Mg, Ta, Zr, Be or B. The conductive material with the third cation may be deposited by sputtering, vacuum deposition, or chemical vapour deposition at less than 600C. and may be Mo, V, W, Nb or Ta. Typically, SiO 2 is implanted with Al and then coated with W, e.g. from WF 6 and H 2 .
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公开(公告)号：DE2243153A1
公开(公告)日：1973-04-05
申请号：DE2243153
申请日：1972-09-01
Applicant: IBM
Inventor： CUOMO JEROME J , HOVEL HAROLD J
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公开(公告)号：DE69333604T2
公开(公告)日：2005-09-15
申请号：DE69333604
申请日：1993-02-01
Applicant: IBM
Inventor： JOSHI RAJIV V , CUOMO JEROME J , DALAL HORMAZDYAR M , HSU LOUIS L
IPC: H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L23/485 , H01L21/60
Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.
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公开(公告)号：DE69329663D1
公开(公告)日：2000-12-21
申请号：DE69329663
申请日：1993-02-01
Applicant: IBM
Inventor： JOSHI RAJIV V , CUOMO JEROME J , DALAL HORMAZDYAR M , HSU LOUIS L
IPC: H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L23/485 , H01L21/60
Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.
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公开(公告)号：ES2148373T3
公开(公告)日：2000-10-16
申请号：ES95106597
申请日：1995-05-02
Applicant: IBM
Inventor： CALI MATTHEW F , CUOMO JEROME J , MIKALSEN DONALD JOSEPH , RUTLEDGE JOSEPH DELA , SELKER EDWIN JOSEPH
Abstract: A strain sensitive columnar transducer for a data entry keyboard contains a column upstanding from the keyboard. Strain sensitive orthogonally oriented patterns are formed on a single flexible planar sheet which is sliced to place each of the patterns on a separate tab. The planar sheet is forced over the column so that the patterns lie up against the sides of the column to measure force exerted on the column.
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