公开(公告)号：DE10361715A1

公开(公告)日：2005-08-04

申请号：DE10361715

申请日：2003-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  NEUGSCHWANDTNER GERHARD ,  POELZL MARTIN

IPC: H01L21/336 ,  H01L21/762 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

Abstract: Production of transition region between a trench (3) and a semiconductor region adjacent to it in a trench/semiconductor component by:application of an oxide barrier layer (15) on the upper part (UP) of the trench inner wall, and production of a first oxidation layer (7) on a lower part (U) of the inner wall not coated by the oxidation barrier layer (15) by thermal oxidation of this uncoated part. An independent claim is included for a trench/semiconductor component (1).

公开(公告)号：DE10210272B4

公开(公告)日：2005-08-04

申请号：DE10210272

申请日：2002-03-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS

IPC: H01L21/336 ,  H01L29/78

公开(公告)号：DE10122362A1

公开(公告)日：2002-11-21

申请号：DE10122362

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  WILLMEROTH ARMIN ,  AUERBACH FRANZ ,  DEBOY GERALD ,  AHLERS DIRK ,  WEBER HANS

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36

Abstract: Semiconductor element arranged in a semiconductor body (1) and controlled by field effect comprises a source zone (6) and a drain zone (4a, 4b) of first conductivity; a body zone (5) arranged between the source and drain zones; and a gate electrode (8) via which a current-introducing channel zone (10) is formed in the body zone by applying a gate potential to the gate electrode. The body zone has a first dopant and a second dopant (16) of second conductivity which are partially ionized at room temperature and have a degree of ionization which increases with increasing temperature. Preferred Features: A first region with the first dopant is provided within the body zone and a second region with a second dopant with the second dopant is provided within the body zone.

公开(公告)号：DE10061310A1

公开(公告)日：2002-06-27

申请号：DE10061310

申请日：2000-12-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  STENGL JENS-PEER ,  DEBOV GERALD ,  WILLMEROTH ARMIN ,  RUEB MICHAEL ,  MARION MIGUEL CUADRON

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/739

Abstract: The device has an active structure and an edge structure with edge compensation areas and floating edge compensation areas with edge compensation zones. Certain areas are fully depleted of charge carriers before reaching breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. The device has an active structure (AS) with a blocking pn-junction in a semiconducting substrate, a first zone (6) of a first conductor type connected to a first electrode (S) and bounding on a zone of opposite type forming the junction blocking zone (7) also connected to the first electrode, a second zone (1) of first type connected to a second electrode (D) and compensation areas (3') nested between the first and second zones. An edge structure (RS) has a number of first edge compensation areas (2) of the first type and a number of floating edge compensation areas (3) of the second type with edge compensation zones (4) and nested with the first areas so that the second areas are fully depleted of charge carriers before reaching the breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. Independent claims are also included for the following: a method of manufacturing a semiconducting component.

公开(公告)号：DE10002323A1

公开(公告)日：2001-08-02

申请号：DE10002323

申请日：2000-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  SCHMIDT THOMAS

IPC: H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/331 ,  H01L21/336

Abstract: Activating electrical doping and siliciding materials which can be inserted into a semiconductor body comprises radiating the doping and siliciding materials with a laser whose wavelength corresponds to the band gap of the semiconductor body. Preferred Features: The laser is an excimer laser, preferably a KrF, ArF or XeF laser, especially an Nd:YAG laser. The laser releases a pulsed laser beam.

公开(公告)号：DE102014117700A1

公开(公告)日：2015-06-11

申请号：DE102014117700

申请日：2014-12-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  WEBER HANS ,  JANTSCHER WOLFGANG ,  STRACK HELMUT ,  SCHUSTEREDER WERNER

IPC: H01L21/66 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78

Abstract: Ein Verfahren zum Herstellen einer Halbleitervorrichtung umfasst ein Bilden einer Ladungskompensationsvorrichtungsstruktur in einem Halbleitersubstrat (105). Das Verfahren umfasst weiterhin ein Messen eines Wertes einer elektrischen Eigenschaft (αi), die auf die Ladungskompensationsvorrichtung bezogen ist. Wenigstens ein Parameter aus Protonenbestrahlungsund Ausheilparametern wird aufgrund des gemessenen Wertes eingestellt. Aufgrund des wenigstens einen Parameters der eingestellten Protonenbestrahlungs- und Ausheilparameter wird das Halbleitersubstrat (105) mit Protonen bestrahlt, und danach wird das Halbleitersubstrat (105) ausgeheilt.

公开(公告)号：DE10361715B4

公开(公告)日：2010-07-29

申请号：DE10361715

申请日：2003-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  NEUGSCHWANDTNER GERHARD ,  POELZL MARTIN

IPC: H01L21/762 ,  H01L21/336 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

公开(公告)号：DE102007041885B4

公开(公告)日：2009-12-24

申请号：DE102007041885

申请日：2007-09-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  ZUNDEL MARKUS

IPC: H01L21/301 ,  H01L21/784

Abstract: A method for dividing a semiconductor substrate involves providing a semiconductor substrate. At least one separating trench is produced at a front side of the semiconductor substrate. A layer is produced at least at the bottom of the at least one separating trench. The semiconductor substrate is thinned at a rear side of the semiconductor substrate at least as far as the layer at the bottom of the at least one separating trench. The layer is severed in order to divide the semiconductor substrate into individual pieces.

公开(公告)号：DE10235000B4

公开(公告)日：2007-01-04

申请号：DE10235000

申请日：2002-07-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  WAHL UWE ,  TIHANYI JENOE ,  WILLMEROTH ARMIN

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

Abstract: Production of a channel zone (12a, 12b) in a transistor comprises structuring a polysilicon layer (11) via the channel zone to be formed and using as a mask substrate for the following doping of the channel zone. An Independent claim is also included for a PMOS field effect transistor cell having a channel zone lying below a polysilicon layer.

公开(公告)号：AT334480T

公开(公告)日：2006-08-15

申请号：AT99929017

申请日：1999-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  STENGL JENS-PEER ,  STRACK HELMUT ,  WEBER HANS ,  GRAF HEIMO ,  RUEB MICHAEL ,  AHLERS DIRK

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.