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    41.
    发明专利
    未知

    公开(公告)号：DE10006738C2

    公开(公告)日：2002-01-17

    申请号：DE10006738

    申请日：2000-02-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： EISERT DOMINIK ,  HAERLE VOLKER ,  KUEHN FRANK ,  MUNDBROD-VANGEROW MANFRED ,  STRAUS UWE ,  ZEHNDER ULRICH

    IPC: H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

    Abstract: A radiation-emitting semiconductor component has a multiple layer structure (4) containing a radiation-emitting active layer (5), and a radiation-permeable window (1) having main surfaces (2, 3) and a recess (8) for forming radiation coupling surfaces running diagonally to the first main surface (2). At least one side surface of the window and/or recess limiting the second main surface (3) is provided with a first contact surface (11). An independent claim is also included for the production of a radiation-emitting semiconductor component comprising preparing a window layer with main surfaces; applying a semiconductor layer structure on the first main surface; structuring the window layer to form a recess in the second main surface; forming a contact surface on the side of the second main surface of the window layer; and finishing the semiconductor component. Preferred Features: The window is made from sapphire, quartz glass, diamond, ITO, tin oxide, zinc oxide, indium oxide, silicon carbide or gallium phosphide. The multiple layer structure is based on gallium nitrides.

    43.
    发明专利
    未知

    公开(公告)号：DE10008584A1

    公开(公告)日：2001-09-13

    申请号：DE10008584

    申请日：2000-02-24

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： LELL ALFRED ,  LUFT JOHANN ,  HAERLE VOLKER ,  HAHN BERTHOLD

    IPC: H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

    Abstract: According to the invention, a semiconductor component is produced for the emission of electromagnetic radiation, in particular, light, which is characterised by comprising an active layer for production of radiation, a p contact, electrically connected to the active layer, an n contact, electrically connected to the active layer and a current limiting structure for the definition of a current path, whereby the current limiting structure is provided between the n contact and the active layer.

    Radiation-emitting semiconductor component used in semiconductor devices has multiple layer structure, and radiation-permeable window
    44.
    发明专利
    Radiation-emitting semiconductor component used in semiconductor devices has multiple layer structure, and radiation-permeable window 未知

    公开(公告)号：DE10006738A1

    公开(公告)日：2001-09-13

    申请号：DE10006738

    申请日：2000-02-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： EISERT DOMINIK ,  HAERLE VOLKER ,  KUEHN FRANK ,  MUNDBROD-VANGEROW MANFRED ,  STRAUS UWE ,  ZEHNDER ULRICH

    IPC: H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

    Abstract: A radiation-emitting semiconductor component has a multiple layer structure (4) containing a radiation-emitting active layer (5), and a radiation-permeable window (1) having main surfaces (2, 3) and a recess (8) for forming radiation coupling surfaces running diagonally to the first main surface (2). At least one side surface of the window and/or recess limiting the second main surface (3) is provided with a first contact surface (11). An independent claim is also included for the production of a radiation-emitting semiconductor component comprising preparing a window layer with main surfaces; applying a semiconductor layer structure on the first main surface; structuring the window layer to form a recess in the second main surface; forming a contact surface on the side of the second main surface of the window layer; and finishing the semiconductor component. Preferred Features: The window is made from sapphire, quartz glass, diamond, ITO, tin oxide, zinc oxide, indium oxide, silicon carbide or gallium phosphide. The multiple layer structure is based on gallium nitrides.

    THIN-FILM LED COMPRISING A CURRENT-DISPERSING STRUCTURE
    46.
    发明申请
    THIN-FILM LED COMPRISING A CURRENT-DISPERSING STRUCTURE 审中-公开
    薄膜的电流散布结构的LED

    公开(公告)号：WO2005071763A2

    公开(公告)日：2005-08-04

    申请号：PCT/DE2005000099

    申请日：2005-01-25

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  OBERSCHMID RAIMUND ,  WEIMAR ANDREAS

    Inventor： BAUR JOHANNES ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  OBERSCHMID RAIMUND ,  WEIMAR ANDREAS

    IPC: H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

    CPC classification number: H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a thin-film LED comprising an active layer (7) consisting of a nitride compound semiconductor that emits electromagnetic radiation (19) in a main radiation direction (15), a current-dispersing layer (9) succeeding the active layer (7) in the main radiation direction and consisting of a first nitride compound semiconductor material, a main surface (14) through which the radiation emitted in the main radiation direction (15) is decoupled, and a first contact layer (11, 12, 13) located on the main surface (14). According to the invention, the transversal conductivity of the current-dispersing layer (9) is increased by the formation of a two-dimensional electron or hole gas. The two-dimensional electron or hole gas is advantageously formed by embedding at least one layer (10) consisting of a second nitride compound semiconductor material in the current-dispersing layer (9).

    Abstract translation: 发射在薄膜LED具有有源层（7）由氮化物化合物半导体的，在主辐射方向上的电流扩散层以下的电磁辐射（19）（15），在所述主辐射方向上的有源层（7）中的一个（15）（9）由一个 第一氮化物半导体材料，一主表面（14），通过该主辐射方向发射的光（15）的辐射被耦合，和一个第一接触层（11，12，13），其被布置在所述主表面（14）上，所述电流扩展层的横向导电性 （9）增加通过形成二维电子或空穴气。 二维电子或空穴气的形成是通过嵌入至少一个层（10）制成在所述电流扩展层（9）的第二氮化物化合物半导体的有利地进行。

    THIN-LAYER LIGHT-EMITTING DIODE CHIP AND METHOD FOR THE PRODUCTION THEREOF
    47.
    发明申请
    THIN-LAYER LIGHT-EMITTING DIODE CHIP AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    薄膜LED芯片及其制造方法

    公开(公告)号：WO2005024962A2

    公开(公告)日：2005-03-17

    申请号：PCT/DE2004001854

    申请日：2004-08-19

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  HAHN BERTHOLD ,  HAERLE VOLKER

    Inventor： BAUR JOHANNES ,  HAHN BERTHOLD ,  HAERLE VOLKER

    IPC: H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/00

    CPC classification number: H01L33/44 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0083 ,  H01L2933/0091

    Abstract: A thin-layer light-emitting diode chip (5) comprising a sequence of epitaxial layers (6) which are arranged on a carrier element (2) and which are provided with an active area (8) producing electromagnetic radiation, in addition to a reflecting layer (3) which is arranged on a main surface of the sequence of epitaxial layers (6) oriented towards the carrier element (2) and which reflects at least one part of the electromagnetic radiation produced in the sequence of epitaxial layer (6) back to said layer, wherein a structured layer (1) is arranged on a radiation decoupling surface (7) of the epitaxial layer facing away from the carrier element (2), said structured layer containing glass material and being provided with structuring which comprises projections (5) which are tapered in the direction of the radiation decoupling surface (7) and which have a lateral grid size which is smaller than the wavelength of electromagnetic radiation emitted from the sequence of epitaxial layers (6). The structured layer (1) is advantageously applied as spin-on glass and is structured by grey tone lithography.

    Abstract translation: 它是一种薄膜发光二极管芯片（5）布置有一个支承元件（2）上外延层（6），其具有电磁辐射产生活性区（8）和朝向所述外延层的主表面上形成一个面对承载元件（2） 布置（6）反射层（3），所述电磁辐射至少生成的外延层（6）的一部分被反射回它，权利，其中背向一个从所述支撑元件（2）辐射耦合（7）的外延层（6）的 布置（1）含有的玻璃材料和具有结构化的结构化层，在辐射的方向上并置（7）的距离锥形凸起（5），其是比（一横向间隔的从所述外延层的波长更小的 具有6）发射的电磁辐射。 图案化的层（1）有利地应用于为旋涂玻璃，并通过灰度光刻图案化。

    RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
    48.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    辐射半导体部件与方法研究

    公开(公告)号：WO2004032248A2

    公开(公告)日：2004-04-15

    申请号：PCT/DE0303157

    申请日：2003-09-23

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER

    Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER

    IPC: H01L33/20 ,  H01L33/00

    CPC classification number: H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a radiation-emitting semiconductor component with a radiation-permeable substrate (1) having a radiation-emitting layer (2) arranged on the lower side thereof, wherein said substrate (1) has inclined side surfaces (3), wherein the index of refraction of the substrate (1) is greater than the index of refraction of the radiation-producing layer, wherein a non-illuminated substrate area (4) results from the difference in the index of refraction and into which no photons can be directly injected from the radiation-producing layer, and wherein the substrate (1) is provided with essentially perpendicular side surfaces (5) in the non-illuminated area thereof. One advantage of the component is that it can be produced with a better surface yield from a wafer.

    Abstract translation: 本发明涉及一种具有辐射透明基板发射辐射的半导体器件（1），下侧，其中一个辐射产生层（2）被布置，其中，所述衬底（1）的倾斜侧表面（3），其特征在于，所述基板的折射率（1）大于 比产生辐射的层的折射率，从而导致其从成没有光子从放射线产生层直接耦合折射率（4），并且其中，所述差的未照亮的基板区中的衬底（1）大致垂直的侧表面（在非照射区域5 ）了。 该组件具有它可以与从晶片更好的区域收率制造的优点。

    METHOD FOR PRODUCING SEMICONDUCTOR ELEMENTS
    49.
    发明申请
    METHOD FOR PRODUCING SEMICONDUCTOR ELEMENTS 审中-公开
    的生产方法的半导体元件

    公开(公告)号：WO9963582A2

    公开(公告)日：1999-12-09

    申请号：PCT/DE9901556

    申请日：1999-05-25

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  HAERLE VOLKER

    Inventor： HAERLE VOLKER

    IPC: H01L21/20 ,  H01L21/205 ,  H01L21/306 ,  H01S5/02 ,  H01S5/026 ,  H01L21/00

    CPC classification number: H01L21/30604

    Abstract: A method for producing semiconductor elements by means of epitaxy, comprising the following steps: a) an HF- soluble mask coating with epitaxial windows is applied to an epitaxial substrate, b) a semiconductor layer or series of layers is/are epitaxially deposited on the areas of the epitaxial substrate that are kept free by said epitaxial windows in an epitaxial reactor, and c) the masking material is removed using a fluorine compound that is introduced into the epitaxial reactor.

    Abstract translation: 通过外延来制造半导体器件的方法，下面的方法步骤：a）应用具有Epitaxiefenstern一个HF可溶掩模层的外延衬底，b）中外延沉积在外延反应器中的暴露的保持由外延衬底的Epitaxiefenstern区域的半导体层或层序列 和c）通过其被引入外延反应器的氟化合物的方法去除掩模材料。

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