公开(公告)号：DE10253160A1

公开(公告)日：2004-03-11

申请号：DE10253160

申请日：2002-11-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  PIETZONKA INES ,  KARNUTSCH CHRISTIAN

IPC: H01L33/14 ,  H01L33/30 ,  H01L33/00

Abstract: Electromagnetic radiation-emitting semiconductor component comprises a semiconductor sequence (14) having an active layer (22) emitting photons, and an electrically conducting covering layer (16) made from InxGayAl1-x-yP (where y = 0-1; x = 0-1; and x + y = not more than 1), especially GaP, arranged on the layer sequence and permeable for the photons emitted by the active layer. The covering layer is p-doped using carbon to produce good electrical conductivity. An Independent claim is also included for a process for the production of an electromagnetic radiation-emitting semiconductor component.

公开(公告)号：DE10147887C2

公开(公告)日：2003-10-23

申请号：DE10147887

申请日：2001-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEGLEITER WALTER ,  STREUBEL KLAUS

IPC: H01J1/62 ,  H01L29/22 ,  H01L33/38 ,  H01L33/00

Abstract: In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.

公开(公告)号：DE10147887A1

公开(公告)日：2003-04-30

申请号：DE10147887

申请日：2001-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEGLEITER WALTER ,  STREUBEL KLAUS

IPC: H01J1/62 ,  H01L29/22 ,  H01L33/38 ,  H01L33/00

Abstract: In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.

公开(公告)号：DE10059532A1

公开(公告)日：2002-06-06

申请号：DE10059532

申请日：2000-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH ,  ILLEK STEFAN

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01S5/022

Abstract: A recess (8) made in an active layer (2) from a fastening side (11) breaks up an active zone (3). A number of recesses form elevations (4) on a connection layer (5) for the active layer. The connection layer has a contact point (7) formed by a metallized layer. Rear side elevations formed by the recesses are covered with a reflective layer made up of a dielectric insulating layer (9) and a metallized layer (10) applied to it.

公开(公告)号：DE10038671A1

公开(公告)日：2002-02-28

申请号：DE10038671

申请日：2000-08-08

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH ,  ILLEK STEFAN

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/30

Abstract: An active layer (2) having a photo-emitting zone (3) has a carrier layer (1) formed on its bonding side. Recesses (8) formed in the active layer, have cross-sectional area which decreases with increasing depth of the recesses into the active layer, from the bonding side.

公开(公告)号：DE19947030A1

公开(公告)日：2001-04-19

申请号：DE19947030

申请日：1999-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  STREUBEL KLAUS

IPC: H01L33/02 ,  H01L33/14 ,  H01L33/22 ,  H01L33/42 ,  H01L33/00

Abstract: Structured-surface light-emitting diode having a light generating layer and a relatively thick, transparent current-spreading layer, vertical structuring of the top surface of the current-spreading layer serves to improve the decoupling of light, while at the same time, a second electrical contact layer with a distributed, lateral structure operates to achieve substantially uniform coupling of electrical current into the current-spreading layer.

公开(公告)号：DE102004057802B4

公开(公告)日：2011-03-24

申请号：DE102004057802

申请日：2004-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  WIRTH RALPH ,  STREUBEL KLAUS

IPC: H01S5/183 ,  H01L33/04 ,  H01L33/10 ,  H01L33/46 ,  H01S5/14

公开(公告)号：DE102007025092A1

公开(公告)日：2008-12-04

申请号：DE102007025092

申请日：2007-05-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  WIRTH RALPH

IPC: G02B27/09 ,  G02B27/42 ,  G02F1/01 ,  G02F1/25 ,  G02F2/02 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50

Abstract: A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.

公开(公告)号：DE502005003172D1

公开(公告)日：2008-04-24

申请号：DE502005003172

申请日：2005-08-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  STREUBEL KLAUS ,  LINDER NORBERT

IPC: H01S5/183 ,  H01S5/14

公开(公告)号：DE102005061797A1

公开(公告)日：2007-07-05

申请号：DE102005061797

申请日：2005-12-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  WIRTH RALPH ,  HAHN BERTHOLD ,  AHLSTEDT MAGNUS ,  ALBRECHT TONY ,  ILLEK STEFAN

IPC: H01L33/14 ,  H01L33/42

Abstract: A luminescence diode chip has a semiconductor layer sequence suitable for generation of electromagnetic radiation, and at least one current barrier which is formed of semiconductor material of the epitaxial semiconductor layer sequence and of material of the current expansion layer and/or by a boundary surface between the semiconductor layer sequence and the current expansion layer. An independent claim is included for a method for fabricating a luminescence diode chip.