公开(公告)号：KR1020110131273A

公开(公告)日：2011-12-06

申请号：KR1020117023704

申请日：2010-02-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히와겐지 ,  고지마야스히코

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/52

CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 상대적으로 높은 제 1 온도로 유지된, 성막 하지막으로서의 Ru막을 갖는 웨이퍼에, Cu 착체로 이루어지는 성막 원료를 공급하여 웨이퍼 상에 Cu의 초기 핵을 생성하고, 그 후, 상대적으로 낮은 제 2 온도로 유지된 웨이퍼에, Cu 착체로 이루어지는 성막 원료를 공급하여 Cu의 초기 핵이 생성된 웨이퍼 상에 Cu를 퇴적시킨다.

公开(公告)号：KR1020110056455A

公开(公告)日：2011-05-30

申请号：KR1020107026850

申请日：2010-08-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고지마야스히코 ,  아즈모슈지

IPC: C25D7/12 ,  C25D21/12 ,  H01L21/288

CPC classification number: C25D7/123 ,  C25D3/38 ,  C25D5/34 ,  C25D17/001 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/76873

Abstract: 성막 방법은, 표면에 시드층으로서 Co막이 형성된 기판을 준비하는 것과, 기판에 대하여 Co의 표면 전위가 Co의 산화 전위보다 낮아지는 부(負)의 전압을 인가하는 것과, 그 후 기판에 부의 전압을 인가한 상태에서 상기 Co막에 황산 구리 용액을 주체로 하는 도금액을 침지시켜, 전해 도금에 의해 상기 기판의 Co막 상에 Cu막을 성막하는 것을 갖는다.

公开(公告)号：KR1020110046389A

公开(公告)日：2011-05-04

申请号：KR1020107026851

申请日：2010-08-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고지마야스히코 ,  아즈모슈지

IPC: H01L21/205

CPC classification number: C23C16/18 ,  C23C16/45525 ,  C23C16/52 ,  C23C16/56 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/166 ,  C23C18/1678 ,  C23C18/1696 ,  C23C18/34 ,  C23C28/023 ,  H01L21/28562 ,  H01L21/76843

Abstract: 처리 용기 내에 기판을 수용하고, 처리 용기 내에 코발트아미디네이트를 포함하는 성막 원료와 카본산을 포함하는 환원제를 기상(vapor phase) 상태에서 도입하여, 기판 상에 Co막을 성막한다.

Abstract translation: 将基板容纳在处理容器中，并将包含用于形成含酞酸钴和碳酸的膜的原料的还原剂以气相状态引入处理容器中，以在基板上形成Co膜。

公开(公告)号：KR1020100017521A

公开(公告)日：2010-02-16

申请号：KR1020097025010

申请日：2006-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시이나오키 ,  마츠자와고우메이 ,  고지마야스히코

IPC: H01L21/205 ,  H01L21/28

CPC classification number: H01L21/76846 ,  C23C16/0209 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76864

Abstract: There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of undercoat material of the substrate. The substrate treatment method includes: a preparation step for preparing a substrate on which a Cu film is to be formed; and a treatment step for performing a predetermined treatment on the substrate so that the crystal on the surface of the undercoat of the substrate exhibits such an orientation that the grating mismatch between the crystal and the Cu film is small.

Abstract translation: 提供在基板的底涂层材料的表面上形成Cu膜之前在基板上进行的基板处理方法。 基板处理方法包括：准备要在其上形成Cu膜的基板的制备步骤; 以及对衬底进行预定处理以使得衬底的底涂层表面上的晶体呈现出晶体与Cu膜之间的光栅失配小的取向的处理步骤。

公开(公告)号：KR100811906B1

公开(公告)日：2008-03-10

申请号：KR1020037007935

申请日：2001-12-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고지마야스히코 ,  아리마스스무 ,  야마사키히데아키 ,  가와노유미코

IPC: H01L21/205

CPC classification number: H01L21/68721 ,  C23C16/4585 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6835 ,  H01L2924/3025

Abstract: After a thin film is deposited on a treatment surface of a wafer and the wafer is transferred out of a treatment chamber, a contact projection of a clamp is brought into contact with a susceptor to heat the clamp. Next, a wafer is disposed on the susceptor by elevating the clamp when the wafer, on which a thin film is not deposited, is transferred in. Thereafter, the clamp is brought into contact with the wafer and the wafer is stabilized to a predetermined temperature. Thereafter, a thin film is deposited on a treatment surface of the wafer.

公开(公告)号：KR1020070058667A

公开(公告)日：2007-06-08

申请号：KR1020077009588

申请日：2005-10-03

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고지마야스히코 ,  요시이나오키

IPC: H01L21/28 ,  H01L21/205

CPC classification number: H01L21/76877 ,  C23C16/0272 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846

Abstract: Bonding between a Cu diffusion preventing film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming a bonding film on the Cu diffusion preventing film formed on the substrate to be processed, and a second process of forming a Cu film on the bonding film. The bonding film includes Pd.

Abstract translation: 半导体装置中的Cu扩散防止膜与Cu配线之间的接合得到改善，提高了半导体器件的可靠性。 在被处理基板上形成Cu膜的成膜方法具有在形成在被处理基板上的Cu扩散防止膜上形成接合膜的第一工序，以及将Cu膜形成在第二工序上 接合膜。 接合膜包括Pd。

公开(公告)号：KR1020060123607A

公开(公告)日：2006-12-01

申请号：KR1020067017740

申请日：2005-02-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시이나오키 ,  고지마야스히코

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285

CPC classification number: H01L21/76841 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/28562

Abstract: A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.

Abstract translation: 提供了一种成膜方法，用于通过交替地向衬底提供包括金属和还原气体的成膜材料来在衬底上形成包括金属的薄膜。 至少一部分成膜材料通过等离子体在气相中解离或分解并供给到基底上。

公开(公告)号：KR1020050108395A

公开(公告)日：2005-11-16

申请号：KR1020057017183

申请日：2004-03-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이시자카다다히로 ,  요시이나오키 ,  가와무라고헤이 ,  후쿠다유키오 ,  시게오카다카시 ,  고지마야스히코 ,  오시마야스히로 ,  아라미주니치 ,  고미아츠시

IPC: H01L21/205 ,  H01L21/02

CPC classification number: C23C16/45542 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45561 ,  Y10T137/86558 ,  Y10T137/86566 ,  Y10T137/86638 ,  Y10T137/86726 ,  Y10T137/86743 ,  Y10T137/86751 ,  Y10T137/86871

Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

Abstract translation: 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

公开(公告)号：KR1020040020820A

公开(公告)日：2004-03-09

申请号：KR1020030060523

申请日：2003-08-30

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 간난히로시 ,  이시자카다다히로 ,  고지마야스히코 ,  오시마야스히로 ,  시게오카다카시

IPC: H01L21/205

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45557

Abstract: PURPOSE: To provide a treatment apparatus and treatment method capable of shortening the time for switching gaseous raw materials by shortening the time required for evacuation of the gaseous raw materials and of maintaining the temperature on a substrate surface under treatment constant. CONSTITUTION: The treating gases containing gaseous raw materials(TiCl4 and NH3) and inert gas(N2) are supplied into a treating vessel 2. The pressure in the treating vessel 2 is detected by a pressure gage 6 and the flow rate of the treating gases supplied into the treating vessel 2 is controlled in accordance with the result of the detection. Purging of the gaseous raw materials is performed by the inert gas. The flow rate as the entire part of the gaseous raw materials is controlled and the pressure in the treating vessel 2 is maintained constant by maintaining the flow rate of the treating gaseous raw material constant and by controlling the flow rate of the inert gas.

Abstract translation: 目的：提供一种处理装置和处理方法，其能够缩短气态原料的切换时间，缩短气体原料抽真空所需的时间，并将处理温度保持在处理常数上。 构成：将含有气态原料（TiCl 4和NH 3）和惰性气体（N 2）的处理气体供给到处理容器2.处理容器2中的压力由压力计6检测，处理气体的流量 根据检测结果来控制供应到处理容器2中。 气态原料的清除是通过惰性气体进行的。 通过保持处理气态原料的流量恒定并控制惰性气体的流量，控制作为气态原料的整个部分的流量，并且处理容器2中的压力保持恒定。