公开(公告)号：SG177201A1

公开(公告)日：2012-01-30

申请号：SG2011091790

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Abstract: Abstract COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OFSILICON NITRIDECompositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100°C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 A min -1Figure 1

公开(公告)号：SG161280A1

公开(公告)日：2010-05-27

申请号：SG2010026391

申请日：2006-04-10

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  VISINTIN PAMELA M ,  BAUM THOMAS H

Abstract: REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF-ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS A method and self-assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon- containing layer(s) in a one step process.

公开(公告)号：CA2599727A1

公开(公告)日：2005-09-15

申请号：CA2599727

申请日：2005-03-02

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  BERNHARD DAVID D ,  RATH MELISSA K ,  MINSEK DAVID

IPC: G03F7/32 ,  A61K31/44 ,  C11D1/62

Abstract: A composition and process for removing photoresist and/or sacrificial anti- reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or c o- solvent species, to achieve high-efficiency removal of photoresist and/or SA RC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in th e semiconductor architecture.

公开(公告)号：AU2003284931A8

公开(公告)日：2004-06-07

申请号：AU2003284931

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： GHENCIU ELIODOR G ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  XU CHONGYING

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42 ,  B05D1/00 ,  H01L21/00

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

公开(公告)号：AU2002367291A1

公开(公告)日：2003-07-24

申请号：AU2002367291

申请日：2002-12-13

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  MINSEK DAVID W ,  ROEDER JEFFREY F ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D3/02 ,  C11D3/43 ,  C11D7/02 ,  C11D11/00 ,  G03F7/40 ,  G03F7/42 ,  C11D1/02 ,  C11D3/44 ,  D06L1/02 ,  C25F3/12 ,  C25F3/30

Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

公开(公告)号：EP2342738A4

公开(公告)日：2013-04-17

申请号：EP09818502

申请日：2009-10-01

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  JIANG PING ,  BEALL CHARLES ,  BJELOPAVLIC MICK

IPC: C09K13/08 ,  C23F1/18 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31111 ,  C09K13/08 ,  C11D1/00 ,  C11D1/008 ,  C11D1/72 ,  C11D1/78 ,  C11D3/0026 ,  C11D3/042 ,  C11D3/2068 ,  C11D3/37 ,  C11D3/3707 ,  C11D11/0047 ,  C23F1/18 ,  H01L21/02032 ,  H01L21/32134

公开(公告)号：EP2094825A4

公开(公告)日：2012-03-21

申请号：EP07864023

申请日：2007-11-07

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

IPC: C11D1/00 ,  C11D3/00 ,  C11D3/37 ,  C11D7/08 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/02 ,  C11D3/042 ,  C11D3/046 ,  C11D3/06 ,  C11D3/08 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/5004 ,  H01L21/02074 ,  H01L21/02101 ,  H01L21/31111 ,  H01L27/10844

公开(公告)号：EP1733001A4

公开(公告)日：2008-08-13

申请号：EP05727221

申请日：2005-03-14

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: H01L21/311 ,  C11D3/00 ,  C11D3/02 ,  C11D3/20 ,  C11D3/39 ,  C11D3/43 ,  C11D11/00 ,  G03F7/09 ,  G03F7/42 ,  H01L21/44 ,  H01L21/4763

CPC classification number: H01L21/31133 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2075 ,  C11D3/3947 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/091 ,  G03F7/422 ,  G03F7/425 ,  H01L21/31111

Abstract: A method and composition for removing a bottom anti-reflection coating (BARC) layer from semiconductor substrates having such BARC layers is described. The removal composition includes a supercritical fluid, a co-solvent, an etchant and a surfactant. Such removal compositions overcome the intrinsic deficiency of SCCO2 as a removal reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that must be removed from the semiconductor substrate.

公开(公告)号：EP2288965A4

公开(公告)日：2011-08-10

申请号：EP09739904

申请日：2009-05-01

Applicant: ADVANCED TECH MATERIALS

Inventor： COOPER EMANUEL ,  CISSELL JULIE ,  ZHOU RENJIE ,  KORZENSKI MICHAEL B

IPC: G03F7/42 ,  H01L21/311

CPC classification number: G03F7/423 ,  H01L21/31133

公开(公告)号：EP1730600A4

公开(公告)日：2010-07-28

申请号：EP05724288

申请日：2005-03-02

Applicant: ADVANCED TECH MATERIALS

Inventor： RATH MELISSA K ,  BERNHARD DAVID D ,  MINSEK DAVID ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: G03F7/32 ,  A61K31/44 ,  C11D1/62 ,  G03F7/42

CPC classification number: C11D3/044 ,  C11D3/30 ,  C11D3/3947 ,  C11D7/06 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425