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公开(公告)号：US11699774B2
公开(公告)日：2023-07-11
申请号：US17333611
申请日：2021-05-28
Applicant: EPISTAR CORPORATION
Inventor： Tzu-Chieh Hsu , Yi-Wen Huang , Shou-Lung Chen , Hsin-Kang Chen
IPC: H01L33/10 , H01S5/42 , H01L33/60 , H01L33/20 , H01L33/62 , H01L33/38 , H01S5/02 , H01S5/042 , H01S5/183
CPC classification number: H01L33/10 , H01L33/20 , H01L33/385 , H01L33/60 , H01L33/62 , H01S5/0216 , H01S5/0425 , H01S5/04254 , H01S5/04256 , H01S5/423 , H01S5/0217 , H01S5/04257 , H01S5/18305 , H01S5/18311 , H01S2301/176
Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.
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公开(公告)号：US10651335B2
公开(公告)日：2020-05-12
申请号：US16405240
申请日：2019-05-07
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Chih Chiu , Chih-Chiang Lu , Chun-Yu Lin , Ching-Huai Ni , Yi-Ming Chen , Tzu-Chieh Hsu , Ching-Pei Lin
Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
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公开(公告)号：US09997687B2
公开(公告)日：2018-06-12
申请号：US15401710
申请日：2017-01-09
Applicant: EPISTAR CORPORATION
Inventor： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/38 , H01L33/46 , H01L33/60 , H01L33/62 , H01L27/15 , H01L33/42 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/44 , H01L33/48 , H01L25/075 , H01L33/32 , H01L33/40
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.
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公开(公告)号：USD818974S1
公开(公告)日：2018-05-29
申请号：US29570832
申请日：2016-07-12
Applicant: EPISTAR CORPORATION
Designer： Hui-Fang Kao , Tzu-Chieh Hsu , Yao-Ning Chan , Yi-Ming Chen
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公开(公告)号：US09590143B2
公开(公告)日：2017-03-07
申请号：US14949414
申请日：2015-11-23
Applicant: EPISTAR CORPORATION
Inventor： Chun-Yu Lin , Tzu-Chieh Hsu , Fu-Chun Tsai , Yi-Wen Huang , Chih-Chiang Lu
Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.
Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。
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Patent Agency Ranking
公开(公告)号：US09577170B2
公开(公告)日：2017-02-21
申请号：US14663544
申请日：2015-03-20
Applicant: Epistar Corporation
Inventor： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/62 , H01L27/15 , H01L33/42 , H01L33/46 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/44 , H01L33/48 , H01L33/32 , H01L33/38 , H01L33/40
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.
Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。
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公开(公告)号：US20170005227A1
公开(公告)日：2017-01-05
申请号：US15266249
申请日：2016-09-15
Applicant: EPISTAR CORPORATION
Inventor： Yu-Ren Peng , Tzu-Chieh Hsu , Shih-I Chen , Rong-Ren Lee , Hsin-Chan Chung , Wen-Luh Liao , Yi-Chieh Lin
CPC classification number: H01L33/105 , H01L33/10 , H01L33/12 , H01L33/30 , H01L33/38 , H01L33/42 , H01L33/46
Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.
Abstract translation: 发光二极管包括用于发射光线的有源层; 在所述有源层上的上半导体堆叠，其中所述上半导体堆叠包括窗口层; 反射器 以及在所述有源层和所述反射器之间的下半导体堆叠; 其中所述窗口层的厚度小于或等于3μm，并且所述下半导体叠层的厚度小于或等于1μm。
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公开(公告)号：US09337394B2
公开(公告)日：2016-05-10
申请号：US14554488
申请日：2014-11-26
Applicant: Epistar Corporation
Inventor： Yi-Ming Chen , Chun-Yu Lin , Tsung-Hsien Yang , Tzu-Chieh Hsu , Kun-De Lin , Yao-Ning Chan , Chih-Chiang Lu
CPC classification number: H01L33/382 , H01L33/08 , H01L33/22 , H01L33/46
Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.
Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。
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公开(公告)号：US09048345B2
公开(公告)日：2015-06-02
申请号：US14196708
申请日：2014-03-04
Applicant: EPISTAR CORPORATION
Inventor： Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsin-Ying Wang
CPC classification number: H01L33/005 , H01L21/02436 , H01L21/02664 , H01L33/0079
Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.
Abstract translation: 形成发光二极管的方法包括：提供具有穿过基板的一个或多个第一开口的基板; 在所述基板上形成牺牲层; 在牺牲层上形成外延层; 将支撑衬底与所述外延层连接; 以及通过选择性蚀刻牺牲层将衬底与外延层分离。
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公开(公告)号：USD725051S1
公开(公告)日：2015-03-24
申请号：US29486520
申请日：2014-03-31
Applicant: Epistar Corporation
Designer： Hui-Fang Kao , Chih-Chiang Lu , Tzu-Chieh Hsu , Yi-Ming Chen
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