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    52.
    发明专利
    未知

    公开(公告)号：DE602005001401D1

    公开(公告)日：2007-07-26

    申请号：DE602005001401

    申请日：2005-02-22

    Applicant: IBM

    Inventor： CHU JACK O ,  DEHLINGER GABRIEL K ,  GRILL ALFRED ,  KOESTER STEVEN J ,  OUYANG QIGING ,  SCHAUB JEREMY D

    IPC: H01L31/101

    Abstract: The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.

    AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE
    53.
    发明专利
    AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE 未知

    公开(公告)号：AU2003243631A1

    公开(公告)日：2004-01-06

    申请号：AU2003243631

    申请日：2003-06-18

    Applicant: IBM

    Inventor： GRILL ALFRED ,  PATEL VISHNUBHAI V

    IPC: H01L21/768 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/00

    Abstract: There is provided a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms and having a covalently bonded tri-dimensional network structure and a dielectric constant of not more than 2.6. The dielectric constant film may additionally have a covalently bonded ring network. The covalently bonded tri-dimensional (i.e., three dimensional) network structure comprises Si-O, Si-C, Si-H, C-H and C-C covalent bonds and may optionally contain F and N. In the film, the Si atoms may optionally be partially substituted with Ge atoms. The dielectric constant film has a thickness of not more than 1.3 micrometers and a crack propagation velocity in water of less than 10 meters per second. There is further provided a back-end-of-the-line (BEOL) interconnect structure comprising the inventive dielectric film as a BEOL insulator, cap or hardmask layer.

    54.
    发明专利
    未知

    公开(公告)号：DE19518044C2

    公开(公告)日：1997-04-24

    申请号：DE19518044

    申请日：1995-05-17

    Applicant: IBM

    Inventor： BEACH DAVID B ,  GRILL ALFRED ,  SMART CHRISTOPHER J

    IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

    Abstract: A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

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