公开(公告)号：DE502006009404D1

公开(公告)日：2011-06-09

申请号：DE502006009404

申请日：2006-08-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  EICHLER CHRISTOPH

IPC: H01L33/00

公开(公告)号：DE50115841D1

公开(公告)日：2011-05-19

申请号：DE50115841

申请日：2001-02-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LELL ALFRED ,  LUFT JOHANN ,  HAERLE VOLKER ,  HAHN BERTHOLD

IPC: H01L33/00 ,  H01S5/223 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

公开(公告)号：DE102008019268A1

公开(公告)日：2009-09-03

申请号：DE102008019268

申请日：2008-04-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： AVRAMESCU ADRIAN ,  EICHLER CHRISTOPH ,  STRAUS UWE ,  HAERLE VOLKER

IPC: H01S5/18 ,  H01L33/00 ,  H01L33/10 ,  H01S5/125

Abstract: An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0

公开(公告)号：DE102006061164A1

公开(公告)日：2008-06-26

申请号：DE102006061164

申请日：2006-12-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： OTT HUBERT ,  LELL ALFRED ,  STRAUS UWE ,  HAERLE VOLKER ,  STATH NORBERT

IPC: F21V8/00 ,  F21K2/00 ,  G02B6/00 ,  G02B6/02 ,  G02B6/036 ,  G02B6/42 ,  G02F1/13357

Abstract: One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.

公开(公告)号：DE102006043400A1

公开(公告)日：2008-03-27

申请号：DE102006043400

申请日：2006-09-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  BRUEDERL GEORG ,  HAERLE VOLKER ,  HOEPPEL LUTZ ,  STRASBURG MARTIN

IPC: H01L33/00 ,  H01L33/24 ,  H01S5/30

Abstract: The optoelectronic semiconductor chip has a growth substrate (1) with a structured growth surface, which has multiple projections (4) and hollows (3). An active series of deposits (5) are applied on the growth surface. The surface area of the active series of deposits is larger than the area of the lateral cross section (Q) of the growth substrate. The growth substrate consists of gallium nitride, silicon carbide, sapphire, indium gallium nitride, indium aluminum gallium nitride nad zinc oxide.

公开(公告)号：DE10244986B4

公开(公告)日：2008-02-07

申请号：DE10244986

申请日：2002-09-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  FEHRER MICHAEL ,  HAERLE VOLKER ,  BADER STEFAN ,  STEIN WILHELM ,  KAISER STEPHAN

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01S5/028 ,  H01S5/042 ,  H01S5/323

公开(公告)号：DE19943405B4

公开(公告)日：2007-12-20

申请号：DE19943405

申请日：1999-09-10

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER

IPC: H01L27/15 ,  H01L21/20 ,  H01L33/00 ,  H01L33/10 ,  H01S5/183 ,  H01S5/42

公开(公告)号：DE102006061167A1

公开(公告)日：2007-12-20

申请号：DE102006061167

申请日：2006-12-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  SABATHIL MATTHIAS ,  STRAUS UWE ,  EICHLER CHRISTOPH ,  MILLER STEPHAN

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/40 ,  H01L33/46 ,  H01S5/183

Abstract: An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.

公开(公告)号：DE19838810B4

公开(公告)日：2006-02-09

申请号：DE19838810

申请日：1998-08-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER

IPC: H01L33/00 ,  H01S5/02

公开(公告)号：DE10308646A1

公开(公告)日：2004-08-19

申请号：DE10308646

申请日：2003-02-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER

IPC: H01L33/10 ,  H01L33/00

Abstract: A semiconductor substrate (1) with a built in reflecting layer-like zone (3) which is introduced into the substrate and contains an implanted and distributed layer-like impurity material. An independent claim is included for preparation of substrate (1) with impurity material implanted into it.