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公开(公告)号：KR1020120102985A
公开(公告)日：2012-09-19
申请号：KR1020110020943
申请日：2011-03-09
Applicant: 한국화학연구원
CPC classification number: C07F7/2232 , C23C16/18 , C23C16/407 , C23C16/45525
Abstract: PURPOSE: A novel tin compound with fluoro-ligand is provided to ensure high vapor pressure and to be used as a material for thin film deposition. CONSTITUTION: A tin alkoxide compound is denoted by chemical formula 1(Sn[O-A-OR^1]_2) or formula 2(Sn[O-CR^2R^3(CH_2)_m-OR^1]_2). The tin alkoxide compound is Sn(OCMe_2CH_2OCH_2CF_3)_2, or Sn(OCMeEtCH_2OCH_2CF_3)_2. A method for preparing the tin alkoxide compound comprises a step of reacting a tin halide compound of chemical formula 3(SnX_2) with an alkali metal salt of alcohol of chemical formula 4(M[O-A-OR^1]). A thin film containing tin compounds is prepared by MOCVD(modified chemical vapor deposition) or ALD(atomic layer deposition) using the tin alkoxide compounds as a precursor.
Abstract translation: 目的：提供具有氟配体的新型锡化合物以确保高蒸气压，并用作薄膜沉积材料。 组成：锡化合物化合物由化学式1（Sn [O-A-OR 1] 2）或式2（Sn [O-CR 2 R 2 3（CH 2）m -OR 1] 2）表示。 锡醇盐化合物是Sn（OCMe 2 CH 2 OCH 2 CF 3）2或Sn（OCMeEtCH 2 OCH 2 CF 3）2。 制备锡醇盐化合物的方法包括使化学式3（SnX_2）的卤化锡化合物与化学式4的醇的碱金属盐（M [O-A-OR 1]）反应的步骤。 使用锡醇盐化合物作为前体，通过MOCVD（改性化学气相沉积）或ALD（原子层沉积）制备含有锡化合物的薄膜。
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公开(公告)号：KR1020120079282A
公开(公告)日：2012-07-12
申请号：KR1020110000493
申请日：2011-01-04
Applicant: 한국화학연구원
CPC classification number: C07F9/94 , C23C16/18 , C23C16/40 , C23C16/45525
Abstract: PURPOSE: A novel bismuth amino alkoxide compound with an amino alkoxide ligand and a method for preparing the same are provided to deposit a thin film or various alloys. CONSTITUTION: A bismuth amino alkoxide compound is denoted by chemical formula 1(Bi[O-A-NR^1R^2]_3) or formula 2(Bi[O-CR^3R^4(CH_2)_m-NR^1R^2]_3). A method for preparing the compound of chemical formula 1 comprises a step of reacting bismuth halide compound of chemical formula 2(BiX) with alkali metal salt of alcohol of chemical formula 4(M[O-A-NR_1R_2]). A bismuth compound of chemical formula 6(Bi[NR^5_2]_3) is prepared by reacting a bismuth halide compound of chemical formula 3(BiX_3) with alkali metal compounds of chemical formula 5(M[NR^5_2]). A bismuth-containing thin film is prepared using the bismuth amino alkoxide compounds as a precursor.
Abstract translation: 目的：提供一种具有氨基醇盐配体的新型铋氨基烷氧基化合物及其制备方法，以沉积薄膜或各种合金。 构成：铋氨基烷氧基化合物由化学式1（Bi [OA-NR] 1R ^ 2] _3）或式2（Bi [O-CR 3 3R 4（CH 2）m-NR 1 R 1）2] _3）。 制备化学式1化合物的方法包括使化学式2（BiX）的卤化铋化合物与化学式4的醇的碱金属盐（M [O-A-NR_1R_2]）反应的步骤。 通过使化学式3（BiX_3）的卤化铋化合物与化学式5的碱金属化合物（M [NR 5 - 5]]反应，制备化学式6的铋化合物（Bi [NR 5/2] _3）。 使用铋氨基醇盐化合物作为前体制备含铋的薄膜。
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公开(公告)号：KR1020120032720A
公开(公告)日：2012-04-06
申请号：KR1020100094200
申请日：2010-09-29
Applicant: 한국화학연구원
CPC classification number: C07F5/00 , C01G15/00 , C01P2004/64 , C23C16/40
Abstract: PURPOSE: A novel gallium glycolate compounds and a method for preparing the same are provided to ensure excellent thermal stability and easy storage. CONSTITUTION: A gallium glycolate compound is denoted by chemical formula 1. The gallium glycolate compound is prepared by reacting gallium compounds of chemical formula 2(GaX^1_3) and glycolate compound of chemical formulas 3(HOCOCH_2OR^3) and 4(HOCH_2COOR^3). A gallium oxide thin film is formed by MOCVD using gallium glycolate compounds as a precursor.
Abstract translation: 目的：提供新型的乙醇酸镓化合物及其制备方法，以确保优异的热稳定性和易于储存。 构成：化学式1表示乙酸羟乙酯化合物。通过使化学式2的镓化合物（GaX 3）和化学式3（HOCOCH 2 OR 3）和4（HOCH 2 COOR 3）的乙醇酸化合物 ）。 通过MOCVD，使用乙酸羟乙酯化合物作为前体形成氧化镓薄膜。
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Patent Agency Ranking
公开(公告)号：KR101799158B1
公开(公告)日：2017-11-17
申请号：KR1020150158237
申请日：2015-11-11
Applicant: 한국화학연구원
IPC: C07F7/22 , C23C16/06 , C23C16/455 , H01L21/205 , H01L21/02
Abstract: 본발명은열적안정성과휘발성이개선된신규한주석전구체에관한것으로, 상기주석전구체를이용하여낮은온도에서우수한성장속도로, 쉽게양질의주석산화물박막을제조하는방법및 이를통해제조된박막을제공할수 있다.
Abstract translation: 本发明提供了热稳定性，并通过使用锡前体，可容易地制造优良品质的氧化锡薄膜的方法以及通过制备该薄膜涉及一种新的前体的锡的挥发性的提高，与在较低温度下优于增长率 你可以。
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公开(公告)号：KR101742391B1
公开(公告)日：2017-05-31
申请号：KR1020150158224
申请日：2015-11-11
Applicant: 한국화학연구원
IPC: C07F5/00 , C23C16/06 , C23C16/455 , H01L21/205 , H01L21/02
Abstract: 본발명은열적안정성과휘발성이개선된신규한인듐전구체에관한것으로, 상기인듐전구체를이용하여낮은온도에서쉽게양질의인듐산화물박막을제조하는방법및 이를통해제조된박막을제공할수 있다.
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公开(公告)号：KR1020170055268A
公开(公告)日：2017-05-19
申请号：KR1020150158224
申请日：2015-11-11
Applicant: 한국화학연구원
IPC: C07F5/00 , C23C16/06 , C23C16/455 , H01L21/205 , H01L21/02
Abstract: 본발명은열적안정성과휘발성이개선된신규한인듐전구체에관한것으로, 상기인듐전구체를이용하여낮은온도에서쉽게양질의인듐산화물박막을제조하는방법및 이를통해제조된박막을제공할수 있다.
Abstract translation: 本发明涉及一种具有改善的热稳定性和挥发性的新型铟前体，并且提供一种通过使用该铟前体和由此制备的薄膜而在低温下容易地生产高质量氧化铟薄膜的方法。
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公开(公告)号：KR101653547B1
公开(公告)日：2016-09-02
申请号：KR1020150034669
申请日：2015-03-12
Applicant: 한국화학연구원
IPC: H01L51/42 , H01L31/0256
CPC classification number: Y02E10/549 , Y02P70/521
Abstract: 본발명은복합페로브스카이트계소재및 이를포함하는전자소자에관한것으로, 상세하게, 본발명에따른복합페로브스카이트계소재는유기양이온, 2종이상의금속양이온및 할로겐음이온을포함한다.
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公开(公告)号：KR101610623B1
公开(公告)日：2016-04-08
申请号：KR1020140085100
申请日：2014-07-08
Applicant: 한국화학연구원
IPC: C23C16/40 , C23C16/44 , C23C16/46 , H01L21/205
Abstract: 본발명은동일주석전구체로부터 HO의존재하에신규의 SnO 상태의 p형주석산화물박막을증착하는단계를포함하는주석산화물박막제조및 제어방법과이를이용한트랜지스터제조방법을제공하는것이다.
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