公开(公告)号：MY117703A

公开(公告)日：2004-07-31

申请号：MYPI20010672

申请日：2001-02-14

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  REUTER BETTE BERGMAN L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/52 ,  H01L23/58 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532

Abstract: A METHOD AND STRUCTURE FOR A SEMICONDUCTOR CHIP INCLUDES A PLURALITY OF LAYERS OF INTERCONNECT METALLURGY, AT LEAST ONE LAYER OF DEFORMABLE DIELECTRIC MATERIAL OVER THE INTERCONNECT METALLURGY, AT LEAST ONE INPUT/OUTPUT BONDING PAD, AND A SUPPORT STRUCTURE THAT INCLUDES A SUBSTANTIALLY RIGID DIELECTRIC IN A SUPPORTING RELATIONSHIP TO THE PAD THAT AVOIDS CRUSHING THE DEFORMABLE DIELECTRIC MATERIAL.

公开(公告)号：DE10110566A1

公开(公告)日：2001-09-27

申请号：DE10110566

申请日：2001-03-06

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  BERGMAN-REUTER BETTE L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532 ,  H01L23/50 ,  H01L21/314

Abstract: Over the coupling metallising is deposited at least one film of deformable dielectric material. A support structure, contg. rigid dielectric, is connected to the deformable dielectric and to an input-output bond island.The support structure also supports the bond island to prevent the fracture of the deformable dielectric material. Typically the support structure contains a cap over the deformable dielectric material, coplanar with the structured last metallising layer. Independent claims are included for integrated circuit chip and for mfr. of semiconductor chip.

公开(公告)号：GB2485714B8

公开(公告)日：2015-09-23

申请号：GB201203306

申请日：2010-08-12

Applicant: IBM ,  RF MICRO DEVICES INC

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K ,  HAMMOND JONATHAN HALE ,  COSTA JULIO CARLOS

IPC: B81C1/00

公开(公告)号：GB2510755A

公开(公告)日：2014-08-13

申请号：GB201408506

申请日：2012-10-03

Applicant: IBM

Inventor： LUCE STEPHEN E ,  STAMPER ANTHONY K

IPC: H03H3/02

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam (44) comprising amorphous silicon material (29) and providing an insulator material (32) over and adjacent to the amorphous silicon beam. The method further includes forming a via (50) through the insulator material and exposing a material (25) underlying the amorphous silicon beam (44). The method further includes providing a sacrificial material (36) in the via and over the amorphous silicon beam. The method further includes providing a lid (38) on the sacrificial material and over the insulator material. The method further includes venting, through the lid (vent hole 40), the sacrificial material and the underlying material to form an upper cavity (42a) above the amorphous silicon beam and a lower cavity (42b) below the amorphous silicon beam, respectively.

公开(公告)号：GB2498264B

公开(公告)日：2014-07-16

申请号：GB201300017

申请日：2013-01-02

Applicant: IBM

Inventor： JAHNES CHRISTOPHER VINCENT ,  STAMPER ANTHONY K

IPC: B81B3/00 ,  H01G5/18

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.

公开(公告)号：DE112012002979T5

公开(公告)日：2014-04-30

申请号：DE112012002979

申请日：2012-06-29

Applicant: IBM

Inventor： DUNBAR THOMAS J ,  JAFFE MARK D ,  WOLF RANDY L ,  CANDRA PANGLIJEN ,  ADKISSON JAMES W ,  GAMBINO JEFFREY P ,  STAMPER ANTHONY K

IPC: H03H9/64

Abstract: Hierin wird ein Oberflächen-Schallwellen(SAW)-Filter und ein Verfahren zur Herstellung desselben offenbart. Der SAW-Filter umfasst ein piezoelektrisches Substrat (110; 3); eine ebene Barriereschicht (120), welche über dem piezoelektrischen Substrat angeordnet ist, und mindestens einen Leiter (130), welcher in dem piezoelektrischen Substrat und der ebenen Barriereschicht vergraben ist.

公开(公告)号：GB2497649B

公开(公告)日：2013-11-06

申请号：GB201221916

申请日：2012-12-05

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  JAHNES CHRISTOPHER VINCENT

IPC: B81C1/00 ,  B81B3/00 ,  H01G5/019 ,  H03H9/02

Abstract: Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming for MEMS capacitor devices, and design structures are disclosed. The method includes identifying a process variation related to a formation of micro-electro-mechanical structure (MEMS) capacitor devices across a substrate. The method further includes providing design offsets or process offsets in electrode areas of the MEMS capacitor devices across the substrate, based on the identified process variation.

公开(公告)号：DE102013200215A1

公开(公告)日：2013-07-25

申请号：DE102013200215

申请日：2013-01-10

Applicant: IBM

Inventor： CANDRA PANGLIJEN ,  DUNBAR THOMAS J ,  JAFFE MARK D ,  STAMPER ANTHONY K ,  WOLF RANDY L ,  GAMBINO JEFFREY P ,  ADKISSON JAMES W

IPC: H03H9/64 ,  H01L41/08 ,  H03H3/08

Abstract: Hierin werden schaltbare und/oder abstimmbare Filter, Herstellungsverfahren und Entwurfsstrukturen offenbart. Das Verfahren zum Bilden der Filter schließt das Bilden mindestens einer piezoelektrischen Filterstruktur ein, die eine Vielzahl von Elektroden aufweist, die auf einem piezoelektrischen Substrat gebildet sind. Das Verfahren schließt außerdem das Bilden einer feststehenden Elektrode mit einer Vielzahl von Fingern auf dem piezoelektrischen Substrat ein. Das Verfahren schließt zudem das Bilden einer beweglichen Elektrode mit einer Vielzahl von Fingern über dem piezoelektrischen Substrat ein. Das Verfahren schließt außerdem das Bilden von Betätigungselementen ein, die mit einem oder mehreren von der Vielzahl von Fingern der beweglichen Elektrode ausgerichtet sind.

公开(公告)号：DE102012223968A1

公开(公告)日：2013-07-04

申请号：DE102012223968

申请日：2012-12-20

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02

Abstract: Es werden Strukturen mit mikroelektromechanischem System (MEMS), Verfahren zur Herstellung und Designstrukturen offenbart. Das Verfahren beinhaltet das Bilden von wenigstens einer festen Elektrode auf einem Substrat. Das Verfahren beinhaltet des Weiteren das Bilden eines Arms eines mikroelektromechanischen Systems (MEMS) mit einer variierenden Breitenabmessung von einer Oberseite des MEMS-Arms aus gesehen über der wenigstens einen festen Elektrode.

公开(公告)号：GB2497649A

公开(公告)日：2013-06-19

申请号：GB201221916

申请日：2012-12-05

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  JAHNES CHRISTOPHER VINCENT

IPC: B81C1/00 ,  B81B3/00 ,  H01G5/019 ,  H03H9/02

Abstract: Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming for MEMS capacitor devices, and design structures are disclosed. The method includes identifying a process variation related to a formation of micro-electro­mechanical structure (MEMS) capacitor devices across a substrate. The method further includes providing design offsets or process offsets in electrode areas of the MEMS capacitor devices across the substrate, based on the identified process variation. This method compensates for the variance in capacitance during fabrication of the MEMS capacitors across an array of capacitors on a single substrate.