公开(公告)号：DE10004393C1

公开(公告)日：2002-02-14

申请号：DE10004393

申请日：2000-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  PLOETZ FLORIAN ,  MICHAELIS SVEN

IPC: B81B3/00 ,  H01H1/20 ,  H01H59/00

Abstract: A microrelay has a switching part which is pivotably suspended on a substrate and can be moved into two alternative switching states like a rocker, by electrostatic attraction through the use of suitably attached electrodes. The switching function is brought about by electrodes which are fastened to the substrate above the rocker being shorted by metallizations or contact electrodes on an upper side of the switching part.

公开(公告)号：DE10035421A1

公开(公告)日：2002-02-07

申请号：DE10035421

申请日：2000-07-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  LUEDER ELBRECHT ,  HERZOG THOMAS RAINER ,  MARKSTEINERN STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H01L21/283 ,  H01L21/20 ,  H01L21/36 ,  H01L37/00 ,  H01L41/047 ,  H03H9/46

Abstract: At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositing a conductive material and then chemically-mechanically polished in order to smooth out surface roughness. The thickness of the deposited conductive material is preferably reduced by 10 nm to 100 nm by the chemical-mechanical polishing process.

公开(公告)号：DE10023872C1

公开(公告)日：2001-12-13

申请号：DE10023872

申请日：2000-05-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  AIGNER ROBERT ,  FRANOSCH MARTIN ,  SCHAEFER HERBERT

IPC: B81C1/00

Abstract: Producing microstructures layers comprises applying a layer (3) to be perforated on a sacrificial layer (2) applied on a substrate (1); depositing crystals (6) on the layer to be perforated and forming a mask layer which covers the regions left free by the crystals; producing perforations while the layer is removed from the mask and removing the sacrificial layer using perforations as etching openings. Preferred Features: The crystals are made from silicon. In the second step, a layer of material for the mask layer is deposited on the crystals and between the crystals, leveled and the crystals removed so that the leveled layer remains as the mask layer.

公开(公告)号：DE10007577C1

公开(公告)日：2001-09-13

申请号：DE10007577

申请日：2000-02-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H9/17 ,  H03H9/58 ,  B06B1/06 ,  H01L41/16

Abstract: The piezo resonator has a piezo layer between first and second electrode layers (3,4), a third electrode layer (5) and an electroactive or electrostrictive layer (2) between the third electrode layer and the second electrode layer. The piezo and electroactive or electrostrictive layers are formed on a series of layers (11,12) of alternately low and high acoustic impedance materials.

公开(公告)号：DE10004390A1

公开(公告)日：2001-08-16

申请号：DE10004390

申请日：2000-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRASSER MARC ,  FUELDNER MARC ,  AIGNER ROBERT

IPC: H01L35/32 ,  H01L35/34

Abstract: The thermoelectric generator has a doped semiconductor layer between thermally conductive materials in alignment with a layer plane. The semiconductor layer is structured in regions (1) with p- and n-type sections (11,12) having components (14,15) that lie outside the layer plane. An electrically insulating spacer region (21) is provided between an external component of a p-type section of one region (1) and an external component of an n-type section of an adjacent region (1). The spacer region is arranged vertically w.r.t. the layer plane. Each spacer region is bridged by a metal contact (5) that electrically connects the components separated by the spacer region.

公开(公告)号：DE10001127A1

公开(公告)日：2001-07-19

申请号：DE10001127

申请日：2000-01-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT

IPC: H04N9/31 ,  H04N5/74

Abstract: The invention relates to a video projection system that is provided with a laser that emits a laser beam. The laser beam is deflected onto the projection surface by means of a deflection unit. The projection surface contains luminous substances which generate light beams when the laser beam impinges, whereby said light beams have a predetermined wavelength. The light beams generated by the luminous substances are detected using a detection unit. The intensity of the laser beam is controlled according to desired video data and the detected light beams and by means of a control unit.

公开(公告)号：DE19949611A1

公开(公告)日：2001-06-07

申请号：DE19949611

申请日：1999-10-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  HANDTMANN MARTIN

IPC: G01C19/56 ,  G01P9/04

Abstract: An angular rate sensor includes a ring that is kept floating by electrostatic forces between electrodes without the ring being mechanically or electrically contacted. The ring is divided into segments of differing radial dimensions which cooperate with a multi-phase drive from segmented electrodes to exert a torque on the floating ring which causes the ring to rotate. A control of the position of the ring and a detection of the Coriolis force that occurs are achieved by the voltages applied to the electrodes.

公开(公告)号：CA2368551A1

公开(公告)日：2000-10-12

申请号：CA2368551

申请日：2000-03-01

Applicant: NOKIA MOBILE PHONES LTD ,  INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELLA JUHA

IPC: H03H9/00 ,  H03H9/02 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64

Abstract: The invention relates to a component comprising a piezoelectric layer which is positioned between a first lower electrode (151) and a first upper electrode (171) as well as between a second lower electrode (152) and a second upper electrode (172). The first lower electrode (151), the first upper electrode (171), the second lower electrode (152) and the second upper electrode (172) are each structured. The structures of the first upper electrode (171) and second upper electrode (172) as well as the structures of the first lower electrode (151) and second lower electrode (152) intermesh. The above component is suitable for use as a filter, transformer and impedance adapter in high-frequency applications.

公开(公告)号：AT555056T

公开(公告)日：2012-05-15

申请号：AT99952247

申请日：1999-08-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  BEVER THOMAS ,  TIMME HANS-JOERG

IPC: B81B3/00 ,  G01L9/12 ,  B81C1/00 ,  H01L29/84 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.

公开(公告)号：DE50312662D1

公开(公告)日：2010-06-10

申请号：DE50312662

申请日：2003-02-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  BRAUER MICHAEL ,  BEVER THOMAS ,  DEHE ALFONS ,  FUELDNER MARC

IPC: B81B3/00 ,  B81B7/02