公开(公告)号：DE102007043902A1

公开(公告)日：2009-03-19

申请号：DE102007043902

申请日：2007-09-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERMANN SIEGFRIED ,  BAUR JOHANNES ,  FISCHER HELMUT ,  PLAINE GLENN-YVES

IPC: H01L21/78 ,  H01L33/00 ,  H01L33/38

Abstract: The method involves carrying out mask exposure of a photoresist layer (4). Portions of the layer within areas between trenches (3) are removed for surmounting a residual portion of the photoresist layer to the trenches. A metallization is fabricated from an upper side of a semiconductor layer (20) on a substrate (1). The metallization is formed thinly so that residual portion lies freely on top and portions of metallization are separated according to the partition into semiconductor components by residual portion, which is removed. The semiconductor layer is a gallium nitride.

公开(公告)号：DE50310838D1

公开(公告)日：2009-01-08

申请号：DE50310838

申请日：2003-09-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER

IPC: H01L33/20

公开(公告)号：DE50309549D1

公开(公告)日：2008-05-15

申请号：DE50309549

申请日：2003-09-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  PLOESSL ANDREAS ,  STEIN WILHELM

IPC: H01L33/32 ,  H01L33/40

Abstract: A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18 ), a contact connected to the n-doped cladding layer ( 14 ) and a mirror layer ( 20 ) connected to the p-doped cladding layer ( 18 ). The mirror layer ( 20 ) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

公开(公告)号：DE10242360B4

公开(公告)日：2007-09-27

申请号：DE10242360

申请日：2002-09-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRUEDERL GEORG ,  BAUR JOHANNES ,  STATH NORBERT ,  FEHRER MICHAEL ,  HAHN BERTHOLD

IPC: H01L31/101 ,  H01L31/0264 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32

公开(公告)号：DE10340271A1

公开(公告)日：2005-04-14

申请号：DE10340271

申请日：2003-08-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  HAERLE VOLKER ,  HAHN BERTHOLD

IPC: H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/00

Abstract: A thin-layer LED chip ( 5 ) is claimed, comprising an epitaxial layer sequence ( 6 ) that is disposed on a carrier element ( 2 ) and contains an electromagnetic-radiation-generating active region ( 8 ), and a reflective layer ( 3 ) that is disposed on a principal surface of the epitaxial layer sequence ( 6 ) facing toward the carrier element ( 2 ) and reflects at least a portion of the electromagnetic radiation generated in the epitaxial layer sequence ( 6 ) back thereinto, in which a structured layer ( 1 ) containing a glass material is applied to a radiation extraction surface ( 7 ) of the epitaxial layer sequence ( 6 ) facing away from said carrier element ( 2 ) and has a structure that includes mutually adjacent protuberances ( 5 ) that taper in the direction away from the radiation extraction surface ( 7 ) and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence ( 6 ). The structured layer ( 1 ) is advantageously applied as spin-on glass and structured by grayscale lithography.

公开(公告)号：DE10208170A1

公开(公告)日：2003-09-11

申请号：DE10208170

申请日：2002-02-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRAUSS UWE ,  BAUR JOHANNES ,  BRUEDERL GEORG ,  EISERT DOMINIK ,  KAISER STEPHAN ,  LELL ALFRED ,  LUGAUER HANS-JUERGEN

IPC: H01L33/10 ,  H01L33/20 ,  H01L33/40 ,  H01L33/46 ,  H01S5/18 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component with a vertical emission direction comprises a radiation-decoupling layer (12) permeable to radiation emitted from the active layer during operation, a series (14) of semiconductor layers containing a photon-emitting active layer (18), a first reflecting layer (22) arranged between the radiation-decoupling layer and the series of semiconductor layers, and a second reflecting layer (24) arranged on the side of the series of semiconductor layers facing away from the radiation-decoupling layer. The first and second reflecting layers form a resonator arranged perpendicular to a main extension direction of the series of semiconductor layers. The axis (30) of the resonator represents the vertical emission direction of the component. The reflectivity of the first reflecting layer is lower than the reflectivity of the second reflecting layer so that the vertically emitted radiation is decoupled from the component via the decoupling layer. An Independent claim is also included for the production of the above radiation-emitting semiconductor element. Preferred Features: The active layer consists of GaN, InGaN, AlGaN or In AlGaN. The first reflecting layer has a succession of GaN and AlGaN layers.

公开(公告)号：DE10203801A1

公开(公告)日：2003-08-21

申请号：DE10203801

申请日：2002-01-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BRUEDERL GEORG ,  BAUR JOHANNES

IPC: H01L21/20 ,  H01L33/00 ,  H01L33/38

Abstract: A semiconductor component has a substrate and a semiconductor body that contains at least one nitride compound semiconductor and is arranged on a surface of the substrate. An electrically conductive masking layer with a predetermined mask structure is arranged between the substrate and the semiconductor body. The masking layer partly covers the surface of the substrate. Furthermore, the invention describes a method for fabricating such a semiconductor component.

公开(公告)号：DE10141352A1

公开(公告)日：2003-06-05

申请号：DE10141352

申请日：2001-08-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  NEU WALTER

Inventor： NEU WALTER ,  BRUEDERL GEORG ,  BAUR JOHANNES ,  LELL ALFRED ,  OBERSCHMID RAIMUND

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/324 ,  H01L33/00 ,  H01L21/225

Abstract: The invention relates to a method for the thermal treatment of a surface layer (4) on a semiconductor substrate (5). Laser pulses (2) generated by a laser (1) are emitted onto the surface layer (4). This method can be used to produce, in particular, ohmic contacts to III-V compound semiconductors.

公开(公告)号：DE10054966A1

公开(公告)日：2002-05-16

申请号：DE10054966

申请日：2000-11-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRAUS UWE ,  OBERSCHMID REIMUND ,  HAERLE VOLKER ,  BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  JACOB ULRICH ,  PLASS WERNER ,  VOELKL JOHANNES ,  ZEHNDER ULRICH

IPC: H01L33/02 ,  H01L33/08 ,  H01L33/20 ,  H01L33/40 ,  H01L33/00

Abstract: A light-emitting chip (3) comprises a lens-shaped output window (4), the base surface (5) of which is provided with a mirror surface (6). A sequence of layers (9) is arranged on an output surface (7) of the output window (4) with a photon-emitting p-n junction (10). The photons emitted by the p-n junction are reflected at the mirror surface (6) and can leave the output window (4) through the output surface (7).