METHOD FOR IMPEDANCE MATCHING THE OUTPUT IMPEDANCE OF A HIGH-FREQUENCY POWER SUPPLY ARRANGEMENT TO THE IMPEDANCE OF A PLASMA LOAD, AND HIGH FREQUENCY POWER SUPPLY ARRANGEMENT
    61.
    发明申请
    METHOD FOR IMPEDANCE MATCHING THE OUTPUT IMPEDANCE OF A HIGH-FREQUENCY POWER SUPPLY ARRANGEMENT TO THE IMPEDANCE OF A PLASMA LOAD, AND HIGH FREQUENCY POWER SUPPLY ARRANGEMENT 审中-公开
    方法阻抗匹配的高频电源装置的输出阻抗等离子体负载的阻抗和高频电源配置结构

    公开(公告)号:WO2012159620A2

    公开(公告)日:2012-11-29

    申请号:PCT/DE2012100142

    申请日:2012-05-16

    Inventor: MERTE ROLF

    Abstract: The invention relates to a method for impedance matching the output impedance of a high-frequency power supply arrangement (1) to the impedance of a plasma load (2), comprising the following method steps: a. generating a high-frequency signal by means of a high-frequency signal generator (6); b. in a first impedance matching mode, impedance matching the output impedance of the high-frequency power supply arrangement (1) exclusively by changing the frequency of the generated high-frequency signal; c. monitoring the frequency of the generated high-frequency signal to ascertain whether said frequency is within a predetermined frequency range; d. if the frequency is outside the predetermined frequency range, in a second impedance matching mode, impedance matching the output impedance of the high-frequency power supply arrangement (1) by mechanically and/or electrically changing a circuit (11) connected downstream of the high-frequency signal generator (6).

    Abstract translation: 高频电源装置(1)到等离子体负载的(2)的阻抗的输出阻抗的阻抗匹配的方法,包括的步骤:a。 由高频信号发生器产生高频信号(6); 湾 在该高频电源装置(1)的输出阻抗的第一阻抗匹配模式阻抗​​匹配仅仅通过改变高频信号的频率产生的; 温度。 监测它是否位于一个预定的频率范围中生成的高频信号的频率; 天。 当在第二阻抗匹配模式阻抗​​匹配的频率的输出阻抗是预定的频率范围之外,高频电源装置(1)由高频信号发生器(6)下游的电路(11)的机械和/或电的修改。

    CHARGED PARTICLE BEAM MODULATOR
    62.
    发明申请
    CHARGED PARTICLE BEAM MODULATOR 审中-公开
    充电颗粒光束调制器

    公开(公告)号:WO2012062934A1

    公开(公告)日:2012-05-18

    申请号:PCT/EP2011/070083

    申请日:2011-11-14

    Abstract: The invention relates to a charged particle lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator, a beam stop array and a modulation device. The beam generator is arranged for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column. The beam stop array has a surface for blocking beamlets from reaching the target surface and an array of apertures in the surface for allowing the beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets to prevent one or more of the beamlets from reaching the target surface or allow one or more of the beamlets to reach the target surface, by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. The modulation device comprises a plurality of apertures with associated modulators; and a plurality of light sensitive elements, both arranged in arrays. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for suitably powering elements within the modulation device. The power interface area being located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto.

    Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的带电粒子光刻系统。 该系统包括光束发生器,光束停止阵列和调制装置。 波束发生器布置成用于产生多个带电粒子子束,所述多个子束限定列。 光束停止阵列具有用于阻挡子束到达目标表面的表面和表面中的孔阵列,以允许子束到达目标表面。 调制装置被布置用于调制子束以防止一个或多个子束到达目标表面或允许一个或多个子束到达目标表面,通过偏转或不偏转子束,使得子束被阻挡或 不被光束挡块阻挡。 调制装置包括具有相关调制器的多个孔; 以及排列成阵列的多个光敏元件。 调制装置的表面区域包括细长的波束区域,其包括孔阵列和相关联的调制器,以及用于容纳用于为调制装置内的元件供电的功率装置的电源接口区域。 电源接口区域位于细长波束区域的长边旁边并沿与其大致平行的方向延伸。

    ARC QUENCHING CIRCUIT TO MITIGATE ION BEAM DISRUPTION
    64.
    发明申请
    ARC QUENCHING CIRCUIT TO MITIGATE ION BEAM DISRUPTION 审中-公开
    ARC熄灭电路,以减轻离子束的破坏

    公开(公告)号:WO2007106395A2

    公开(公告)日:2007-09-20

    申请号:PCT/US2007006073

    申请日:2007-03-09

    Abstract: The present invention is directed to a circuit for quenching an arc that may form between high voltage extraction or suppression electrodes associated with an ion source of an ion implantation system to mitigate an erratic ion beam current and avoid non-uniform ion implantations, for example. High voltage high speed switching circuits are added in series with the high voltage supplies for the suppression and/or extraction electrodes to extinguish the harmful arcs which may nearly discharge the high voltage capacitors of such HV power supplies, which dramatically affects the ion beam current and takes considerable time thereafter to recover. The high voltage switches are controlled by trigger circuits which detect current or voltages changes in the HV supplies to the electrodes. The arc quenching circuit also comprises protection circuits for the HV switches that absorb excess energy from reactive components and clamp any overvoltages to protect the HV switches.

    Abstract translation: 本发明涉及一种用于淬灭电弧的电路,其可以在与离子注入系统的离子源相关联的高电压提取或抑制电极之间形成,以减轻例如不规则的离子束电流并避免例如不均匀的离子注入。 高电压高速开关电路与用于抑制和/或提取电极的高电压电源串联,以消除可能几乎放电这些高压电源的高压电容器的有害电弧,这极大地影响离子束电流和 此后需要相当长的时间来恢复。 高压开关由触发电路控制,触发电路检测到电极的HV电源中的电流或电压变化。 灭弧电路还包括用于HV开关的保护电路,其从反应部件吸收多余的能量并夹紧任何过电压以保护HV开关。

    METHOD AND APPARATUS FOR ARC SUPPRESSION IN SCANNED ION BEAM PROCESSING EQUIPMENT
    65.
    发明申请
    METHOD AND APPARATUS FOR ARC SUPPRESSION IN SCANNED ION BEAM PROCESSING EQUIPMENT 审中-公开
    扫描式离子束加工设备中电弧抑制的方法和设备

    公开(公告)号:WO2006047564A3

    公开(公告)日:2006-10-26

    申请号:PCT/US2005038493

    申请日:2005-10-25

    Inventor: REGAN KENNETH P

    Abstract: In an ion bean acceleration system, transient electrical arc suppression and ion beam accelerator biasing circuitry. Two-terminal circuitry, connectable in series, for suppressing arcs by automatically sensing arc conditions and switch from at least a first operating state providing a relatively low resistance electrical pathway for current between source and load terminals to at least a second, relatively high resistance electrical pathway. Selection of circuit component characteristics permits controlling the delay in returning from the second state to the first state after the arc has been suppressed.

    Abstract translation: 在离子豆加速系统中,瞬态电弧抑制和离子束加速器偏置电路。 可串联连接的双端电路,用于通过自动感测电弧状态来抑制电弧,并且从至少第一操作状态切换到第二相对高电阻的电气,所述第一操作状态为电流源和负载端子之间的电流提供相对低电阻的电气通路 途径。 选择电路元件特性允许控制电弧被抑制之后从第二状态返回到第一状态的延迟。

    Ion implanter and method of controlling the same
    69.
    发明授权
    Ion implanter and method of controlling the same 有权
    离子注入机及其控制方法

    公开(公告)号:US09564289B2

    公开(公告)日:2017-02-07

    申请号:US14793265

    申请日:2015-07-07

    CPC classification number: H01J37/241 H01J37/3171

    Abstract: An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.

    Abstract translation: 离子注入机包括高压电源,产生控制高电压电源的输出电压的指令信号的控制单元,施加输出电压的电极单元和测量实际的测量单元 施加到电极单元的电压。 控制单元包括:第一生成部,其生成用于使高压电源输出目标电压的第一指令信号;第二生成部,生成用于补充第一指令信号的第二指令信号,使得测量的实际电压 通过测量单元变得或接近目标电压,以及命令部分,其通过合成第一命令信号和第二命令信号而产生合成命令信号给高压电源。

    ION ENERGY BIAS CONTROL APPARATUS
    70.
    发明申请
    ION ENERGY BIAS CONTROL APPARATUS 审中-公开
    离子能量偏差控制装置

    公开(公告)号:US20160020072A1

    公开(公告)日:2016-01-21

    申请号:US14803815

    申请日:2015-07-20

    CPC classification number: H01J37/32091 H01J37/241 H01J37/32146

    Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

    Abstract translation: 本公开描述了用于操作等离子体处理室的系统,方法和装置。 特别地,可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压,该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量,而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。

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