Abstract:
The invention relates to a method for impedance matching the output impedance of a high-frequency power supply arrangement (1) to the impedance of a plasma load (2), comprising the following method steps: a. generating a high-frequency signal by means of a high-frequency signal generator (6); b. in a first impedance matching mode, impedance matching the output impedance of the high-frequency power supply arrangement (1) exclusively by changing the frequency of the generated high-frequency signal; c. monitoring the frequency of the generated high-frequency signal to ascertain whether said frequency is within a predetermined frequency range; d. if the frequency is outside the predetermined frequency range, in a second impedance matching mode, impedance matching the output impedance of the high-frequency power supply arrangement (1) by mechanically and/or electrically changing a circuit (11) connected downstream of the high-frequency signal generator (6).
Abstract:
The invention relates to a charged particle lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator, a beam stop array and a modulation device. The beam generator is arranged for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column. The beam stop array has a surface for blocking beamlets from reaching the target surface and an array of apertures in the surface for allowing the beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets to prevent one or more of the beamlets from reaching the target surface or allow one or more of the beamlets to reach the target surface, by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. The modulation device comprises a plurality of apertures with associated modulators; and a plurality of light sensitive elements, both arranged in arrays. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for suitably powering elements within the modulation device. The power interface area being located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto.
Abstract:
Charged particle system are disclosed and include a first voltage source, a second voltage source electrically isolated from the first voltage source, a charged particle source electrically connected to the first voltage source, and an extractor electrically connected to the second voltage source. Methods relating to the charged particle systems are also disclosed.
Abstract:
The present invention is directed to a circuit for quenching an arc that may form between high voltage extraction or suppression electrodes associated with an ion source of an ion implantation system to mitigate an erratic ion beam current and avoid non-uniform ion implantations, for example. High voltage high speed switching circuits are added in series with the high voltage supplies for the suppression and/or extraction electrodes to extinguish the harmful arcs which may nearly discharge the high voltage capacitors of such HV power supplies, which dramatically affects the ion beam current and takes considerable time thereafter to recover. The high voltage switches are controlled by trigger circuits which detect current or voltages changes in the HV supplies to the electrodes. The arc quenching circuit also comprises protection circuits for the HV switches that absorb excess energy from reactive components and clamp any overvoltages to protect the HV switches.
Abstract:
In an ion bean acceleration system, transient electrical arc suppression and ion beam accelerator biasing circuitry. Two-terminal circuitry, connectable in series, for suppressing arcs by automatically sensing arc conditions and switch from at least a first operating state providing a relatively low resistance electrical pathway for current between source and load terminals to at least a second, relatively high resistance electrical pathway. Selection of circuit component characteristics permits controlling the delay in returning from the second state to the first state after the arc has been suppressed.
Abstract:
Even in a case where a disturbance is applied from an adjacently disposed power supply circuit or the like, in order to realize a reduction in ripple, a high-voltage power supply device is configured to include a drive circuit, a transformer that boosts an output voltage of the drive circuit, a boost circuit that further boosts a voltage boosted by the transformer, a shield that covers the transformer and the boost circuit, a filter circuit that filters, smoothes, and outputs a high voltage output from the boost circuit, and an impedance loop circuit configured by connection of a plurality of impedance elements into a loop shape. A grounding point of the boost circuit, a grounding point of the shield, and a grounding point of the filter circuit are configured to be grounded via the impedance loop circuit, and this is applied to a high-voltage power supply unit that applies a high voltage to an electron gun of a charged particle beam apparatus.
Abstract:
The system described herein relates to a high-voltage supply unit for providing an output voltage for a particle beam apparatus, wherein the particle beam apparatus is embodied as, for example, an electron beam apparatus and/or an ion beam apparatus. The system described herein is based on the fact that it was recognized that a bipolar voltage supply unit can be formed by means of a unipolar first current source and a unipolar second current source, said bipolar voltage supply unit enabling a load current in two directions. The high-voltage supply unit according to the system described herein can be operated in the 4-quadrant operation. In the 4-quadrant operation, a first voltage source for supplying the first current source and a second voltage source for supplying the second current source are embodied as different voltage sources.
Abstract:
A multicolumn charged particle beam exposure apparatus includes a plurality of column cells which generate charged particle beams, and the column cell includes a yoke which is made of a magnetic material and generates a magnetic field of a predetermined intensity distribution around an optical axis of the column, and a coil which is wound around the yoke. The coil includes a plurality of divided windings, which are driven by different power sources.
Abstract:
An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.
Abstract:
This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.