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公开(公告)号：KR1020150046912A
公开(公告)日：2015-05-04
申请号：KR1020130126493
申请日：2013-10-23
Applicant: (재)한국나노기술원
CPC classification number: H01L33/0079 , H01L21/308 , H01L33/22 , H01L2933/0016
Abstract: 본발명은고출력적색발광다이오드의제작방법에관한것으로서, 나노스케일로표면요철을형성하여광추출효율을증대시키는적색발광다이오드의제조방법에있어서, 박막상층에유전체마스크층을형성하는단계와, 상기유전체마스크층상층에고분자층을형성하는단계와, 상기고분자층상층에자외선경화레진층또는감광성금속유기물전구체층을형성하는단계와, 패턴이형성된나노임프린트용스탬프를준비하는단계와, 상기자외선경화레진층또는감광성금속유기물전구체층을상기나노임프린트용스탬프로가압하고, 빛조사또는가열방법중 어느하나또는혼용한방법으로상기자외선경화레진층또는감광성금속유기물전구체층을경화하여레진패턴층또는금속산화박막패턴층을형성하는단계와, 상기나노임프린트용스탬프를상기레진패턴층또는금속산화박막패턴층으로부터제거하는단계와, 상기레진패턴층또는금속산화박막패턴층, 고분자층및 유전체마스크층을건식식각마스크로이용하여상기박막을건식식각하는단계와, 잔류된유전체마스크층을제거하는단계및 상기제거된유전체마스크층영역일부에리프트오프공정에의해전극패턴을형성하는단계를포함하여이루어진것을특징으로하는고출력적색발광다이오드의제조방법을기술적요지로한다. 이에의해, 적색발광다이오드의제조시나노임프린트공정과건식식각을이용하여박막의표면에대면적의균일한표면요철을형성하여나노러프닝(nano-roughening)을유도하여광추출효율이향상된적색발광다이오드를제공하는이점이있다.
Abstract translation: 本发明涉及一种制造高功率红色发光二极管的方法，包括：在薄膜的上层上形成介电掩模层的步骤; 在介电掩模的上层形成聚合物层的步骤; 在聚合物层的上层形成紫外线固化性树脂层或感光性金属有机前体层的工序; 通过用光照射固化紫外线固化树脂层或感光金属 - 有机前体层来形成树脂图案层或金属氧化物薄膜图案层的步骤，加热方法或光辐射和加热方法的混合方法; 从树脂图案层或金属氧化物薄膜图案层去除纳米压印印模的步骤; 通过使用树脂图案层或金属氧化物薄膜图案层，聚合物层和介电掩模层作为干蚀刻掩模来干蚀刻薄膜的步骤; 去除残留电介质掩模层的步骤; 以及通过剥离处理在去除的电介质掩模层区域的一部分上形成电极图案的步骤。 本发明在制造红色发光二极管时，使用纳米压印加工和干法蚀刻在薄膜表面上形成大的均匀的表面凹凸，并引起纳米粗糙化，从而提供具有提高的光提取效率的发光二极管。
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72.发明授权정렬된 금속산화물 나노구조체에 금속나노입자가 결합된 하이브리드 나노구조체의 제조방법 및 그에 의한 하이브리드 나노구조체 有权金属纳米颗粒与对称金属氧化物纳米结构和混合纳米结构的混合纳米结构的制备方法
公开(公告)号：KR101477038B1
公开(公告)日：2014-12-29
申请号：KR1020130159283
申请日：2013-12-19
Applicant: (재)한국나노기술원
CPC classification number: B82B3/0095 , B82Y40/00
Abstract: The present invention relates to hybrid nanostructures in which metal nanoparticles are combined on metal oxide nanostructures and, more specifically, to a manufacturing method for hybrid nanostructures in which metal nanoparticles are combined on aligned metal oxide nanostructures comprising: a first step of forming a metal-organic precursor layer on a substrate or a thin film; a second step of forming a metal oxide seed layer by an imprinting and hardening process by locating a stamp for imprinting on the metal-organic precursor layer; a third step of forming a metal oxide seed pattern layer by exposing a part of the substrate or thin film by removing a residual layer of the metal oxide seed layer; a fourth step of removing a solvent by performing heat treatment on the metal oxide seed pattern layer; a fifth step of forming aligned metal oxide nanostructures on the metal oxide seed pattern layer in which the solvent is removed by using a hydrothermal synthesis method; and a sixth step of forming hybrid nanostructures by combining metal nanoparticles on the aligned metal oxide nanostructures by using photodecomposition reaction, and to hybrid nanostructures manufactured thereby. The present invention is economical since hybrid nanostructures with metal nanoparticles on metal oxide nanostructures are easily manufactured by using a simple process requiring low production costs such as an imprinting process, a hydrothermal synthesis method, photodecomposition reaction and the like.
Abstract translation: 本发明涉及其中金属纳米颗粒结合在金属氧化物纳米结构上的混合纳米结构，更具体地说，涉及将金属纳米颗粒结合在对准的金属氧化物纳米结构上的混合纳米结构的制造方法，其包括：第一步骤， 有机前体层在基材或薄膜上; 通过定位用于印刷在金属 - 有机前体层上的印模的印刷和硬化工艺来形成金属氧化物种子层的第二步骤; 通过去除所述金属氧化物种子层的残留层而暴露所述基板或薄膜的一部分来形成金属氧化物种子图案层的第三步骤; 通过对所述金属氧化物种子图案层进行热处理来除去溶剂的第四步骤; 在通过水热合成法除去溶剂的金属氧化物种子图案层上形成排列的金属氧化物纳米结构的第五步骤; 以及通过使用光分解反应在排列的金属氧化物纳米结构上结合金属纳米颗粒以及由其制造的混合纳米结构来形成混合纳米结构的第六步骤。 本发明是经济的，因为使用金属纳米颗粒在金属氧化物纳米结构上的杂化纳米结构很容易通过使用需要低生产成本的简单工艺（诸如压印法，水热合成法，光分解反应等）来制造。
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Patent Agency Ranking
公开(公告)号：KR1020130070962A
公开(公告)日：2013-06-28
申请号：KR1020110138243
申请日：2011-12-20
Applicant: (재)한국나노기술원
Abstract: PURPOSE: An electric component having a metal diffusion prevention graphene layer and a manufacturing method there of form a graphene layer between a bonding layer and a metal layer, increasing reproducibility. CONSTITUTION: A metal layer (203) comprises single metal or alloy. A graphene layer (202) is formed on the lower side of the metal. The thickness of the graphene layer is 0.2nm to 1.5μm. A bonding layer (201) is formed one the lower side of the graphene. The bonding layer is formed with one or more of single metal film, alloy film, oxide film, organic layer or inorganic film.
Abstract translation: 目的：具有金属扩散防止石墨烯层的电气部件及其制造方法，其在接合层和金属层之间形成石墨烯层，提高再现性。 构成：金属层（203）包括单一金属或合金。 石墨烯层（202）形成在金属的下侧。 石墨烯层的厚度为0.2nm至1.5μm。 在石墨烯的下侧形成有接合层（201）。 接合层由单金属膜，合金膜，氧化膜，有机层或无机膜中的一种以上形成。
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公开(公告)号：KR1020130052175A
公开(公告)日：2013-05-22
申请号：KR1020110117471
申请日：2011-11-11
Applicant: (재)한국나노기술원
CPC classification number: G03F7/0002 , B29C33/3807 , B82B3/0038 , B82Y40/00
Abstract: PURPOSE: A manufacturing method of a multilayer nanostructure is provided to suppress photo reflection due to difference of refractivity between semiconductor material and air and to minimize damages by etching. CONSTITUTION: A manufacturing method of a multilayer nanostructure comprises a step of forming a polymer layer on the upper part of a substrate; a step of forming a photosensitive metal-organic material precursor layer and an imprint resin layer with Si or metal oxide nanoparticle in the upper part thereof. The imprint resin layer pressurizes the photosensitive metal-organic material layer by a stamp and forms a resin pattern layer or metal oxide thin film pattern layer by heating or light irradiation. An undercut is formed to expose the substrate, by etching one or more of the resin pattern layer, oxide thin film pattern layer, or polymer layer thereof. One or more layers of the resin pattern layer, oxide thin film pattern layer, or polymer layer thereof is formed on one or more upper part of the substrate. A nanostructure(100) is obtained by lifting off one or more of the metal, metal oxide, fluoride, nitride, or sulfide film, by solvent.
Abstract translation: 目的：提供一种多层纳米结构的制造方法，以抑制由于半导体材料与空气之间的折射率差异引起的光反射，并且通过蚀刻使损伤最小化。 构成：多层纳米结构体的制造方法包括在基板的上部形成聚合物层的工序; 在其上部形成感光金属 - 有机材料前体层和用Si或金属氧化物纳米颗粒的压印树脂层的步骤。 压印树脂层通过印模对感光性金属有机材料层进行加压，通过加热或光照射形成树脂图案层或金属氧化物薄膜图案层。 通过蚀刻树脂图案层，氧化物薄膜图案层或其聚合物层中的一个或多个，形成底切以暴露基底。 树脂图案层，氧化物薄膜图案层或其聚合物层的一层或多层形成在基板的一个或多个上部上。 通过溶剂提取一种或多种金属，金属氧化物，氟化物，氮化物或硫化物膜来获得纳米结构（100）。
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公开(公告)号：KR1020120063716A
公开(公告)日：2012-06-18
申请号：KR1020100124812
申请日：2010-12-08
Applicant: (재)한국나노기술원
Abstract: PURPOSE: A method for manufacturing a semiconductor device for substrate reuse is provided to improve productivity of the semiconductor device by securing two thin film structures with one separation process. CONSTITUTION: A first device layer(320) is formed at one side of a substrate(300). The first device layer comprises a transparent electrode layer and a p-type electrode. A second device layer(340) is formed at the other side of the substrate. A first carrier substrate(360) is welded to the first device layer. A second carrier substrate(380) is welded to the second device layer. The first device layer and the substrate are separated and the second device layer and the second device layer are separated through a laser lift off method.
Abstract translation: 目的：提供一种用于制造用于衬底再利用的半导体器件的方法，以通过用一个分离工艺固定两个薄膜结构来提高半导体器件的生产率。 构成：第一器件层（320）形成在衬底（300）的一侧。 第一器件层包括透明电极层和p型电极。 第二器件层（340）形成在衬底的另一侧。 第一载体衬底（360）焊接到第一器件层。 第二载体衬底（380）焊接到第二器件层。 分离第一器件层和衬底，并通过激光剥离法分离第二器件层和第二器件层。
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公开(公告)号：KR101081416B1
公开(公告)日：2011-11-08
申请号：KR1020090110359
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L33/22
Abstract: 본발명은 n-오믹금속층과보호층을동일한물질을사용함으로써공정단계를감소시키고, 낮은온도에서플라즈마인가없이보호층을증착할수 있는발광다이오드제조방법에관한것이다. 본발명에따른발광다이오드제조방법은 n형질화물반도체상에 n-오믹(ohmic) 금속층이형성될부분이노출되도록포토레지스트패턴(photo resist pattern)을형성한다. 그리고포토레지스트패턴과상기 n형질화물반도체가덮이도록상기 n 형질화물반도체상에금속보호층(metallic protection layer)을형성한다. 그리고포토레지스트패턴상에형성되어있는금속보호층과포토레지스트패턴을함께제거하여, n형질화물반도체의표면일부를노출시킨다. 그리고 n형질화물반도체의표면이노출된부분을표면처리하여상기 n형질화물반도체표면을거칠게(roughening) 한다.
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77.发明公开
公开(公告)号：KR1020110053732A
公开(公告)日：2011-05-24
申请号：KR1020090110393
申请日：2009-11-16
Applicant: (재)한국나노기술원
IPC: H01L21/283
Abstract: PURPOSE: A method for forming an ohmic contact electrode using a dielectric thin film is provided to improve the morphology of an ohmic contact electrode surface by forming the dielectric thin film on an ohmic contact electrode. CONSTITUTION: An ohmic contact electrode(230) is formed on a semiconductor layer(220). A dielectric thin film(240) is formed on the ohmic contact electrode to prevent the morphology of the ohmic contact electrode surface from being curved in a thermal process. A contact resistance between a semiconductor layer and an ohmic contact electrode is improved by thermally processing a stack structure. A semiconductor layer, an ohmic contact electrode and a dielectric thin film are stacked on the stack structure. The dielectric thin film is removed.
Abstract translation: 目的：提供使用电介质薄膜形成欧姆接触电极的方法，以通过在欧姆接触电极上形成电介质薄膜来改善欧姆接触电极表面的形态。 构成：在半导体层（220）上形成欧姆接触电极（230）。 在欧姆接触电极上形成电介质薄膜（240），以防止欧姆接触电极表面的形态在热过程中弯曲。 通过热处理堆叠结构，提高了半导体层和欧姆接触电极之间的接触电阻。 半导体层，欧姆接触电极和电介质薄膜堆叠在堆叠结构上。 去除电介质薄膜。
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