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公开(公告)号：KR101345109B1
公开(公告)日：2013-12-26
申请号：KR1020110073391
申请日：2011-07-25
Applicant: (재)한국나노기술원
Abstract: 본발명은기판또는박막에고분자층 및패터닝된감광성금속-유기물전구체층을형성하여박막의식각선택비에따른식각으로언더컷(Undercut)을형성하고, 3차원구조의나노구조체제조를위한금속또는금속산화막증착시 기판의회전유무를조절하여 3차원구조의나노구조체를제조하는임프린트리소그래피와리프트오프공정을이용한 3차원구조의정렬된나노구조체및 그제조방법에관한것으로, 임프린트리소그래피(Imprint Lithography) 공정과리프트오프(Lift-Off) 공정을이용하여 3차원형태의금속또는금속산화막나노구조체를제조하는방법에있어서, 기판에고분자층을형성하는단계, 고분자층 상부에감광성금속-유기물전구체층을형성하는단계, 패턴(Pattern)이형성된임프린트용스탬프(Imprint Stamp)를준비하는단계, 감광성금속-유기물전구체층을임프린트용스탬프(Imprint Stamp)로가압하고, 가열또는빛 조사방법중 어느하나또는혼용한방법으로감광성금속-유기물전구체층을경화하여패턴층을형성하는단계, 임프린트용스탬프(Imprint Stamp)를패턴층으로부터제거하는단계, 건식식각으로패턴층하부의고분자층을식각하여, 기판이노출되도록언더컷(Undercut)을형성하는단계, 패턴층상부또는노출된기판의상부에전자빔 증착기를이용하여금속또는금속산화막을형성하는단계및 용매를이용하여패턴층을리프트오프(Lift-Off)하여나노구조체를취득하는단계를포함한다.
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公开(公告)号：KR101303005B1
公开(公告)日：2013-09-03
申请号：KR1020120029106
申请日：2012-03-22
Applicant: (재)한국나노기술원
IPC: H01L21/3065
CPC classification number: H01L21/67109 , H01L21/67069
Abstract: PURPOSE: A cooling apparatus for a wafer and a wafer cover using a gas is provided to prevent thermal damage to a wafer by forming a through hole in a tray for mounting a wafer. CONSTITUTION: A through hole (130) is formed in a tray. The tray transfers a low temperature gas to a wafer and a wafer cover. A tray body (110) is formed around a tray central part (120). An O-ring is in contact with the lower part of the wafer cover. An O-ring accommodating groove is formed along the cylindrical surface of the tray body.
Abstract translation: 目的：提供一种用于晶片的冷却装置和使用气体的晶片盖，以通过在用于安装晶片的托盘中形成通孔来防止对晶片的热损伤。 构成：在托盘中形成通孔（130）。 托盘将低温气体传送到晶片和晶片盖。 托盘主体（110）围绕托盘中心部分（120）形成。 O形圈与晶片盖的下部接触。 沿托盘体的圆筒面形成有O形环容纳槽。
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公开(公告)号：KR1020130012291A
公开(公告)日：2013-02-04
申请号：KR1020110073391
申请日：2011-07-25
Applicant: (재)한국나노기술원
CPC classification number: G03F7/0002 , B82B3/0038 , B82Y40/00
Abstract: PURPOSE: A 3-dimensional aligned nanostructure prepared by both imprint lithography and lift-off processes is provided to have a uniform size, various shape and constant arrangement by controlling the ratio of dry etching. CONSTITUTION: A manufacturing method a 3-dimensional aligned nanostructure comprises: a step of forming a polymer layer(102) on a substrate(101); a step of forming a photosensitive metal-organic material precursor layer on the upper part of the polymer layer; a step of preparing an imprint stamp; a step of pressurizing the photosensitive metal-organic precursor layer by the imprint stamp; and a step of forming a metal oxide thin-film pattern(105)by hardening the metal-organic precursor layer; a step of removing the imprint stamp from the metal oxide thin film pattern; a step of forming an undercut(106) by etching the polymer layer; a step of forming a metal oxide film(107); and a step of lift-offing the metal oxide thin film pattern and etching the polymer layer with an under cut.
Abstract translation: 目的：通过压印和剥离工艺制备的三维对准的纳米结构通过控制干蚀刻的比例来提供均匀的尺寸，各种形状和恒定的布置。 构成：三维排列纳米结构体的制造方法包括：在基板（101）上形成聚合物层（102）的步骤; 在聚合物层的上部形成感光性金属 - 有机材料前体层的工序; 制作印记邮票的步骤; 通过压印印模对感光金属 - 有机前体层加压的步骤; 以及通过硬化所述金属 - 有机前体层形成金属氧化物薄膜图案（105）的步骤; 从所述金属氧化物薄膜图案去除所述压印印模的步骤; 通过蚀刻聚合物层形成底切（106）的步骤; 形成金属氧化物膜（107）的步骤; 以及剥离金属氧化物薄膜图案并用下切割蚀刻聚合物层的步骤。
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公开(公告)号：KR102150898B1
公开(公告)日：2020-09-03
申请号：KR1020180170150
申请日：2018-12-27
Applicant: (재)한국나노기술원
IPC: H01L21/3213 , H01L21/311 , H01L21/3065 , H01L21/02
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公开(公告)号：KR101886056B1
公开(公告)日：2018-08-08
申请号：KR1020160095039
申请日：2016-07-26
Applicant: (재)한국나노기술원
IPC: B82B3/00 , B82Y15/00 , B82Y40/00 , C23C14/04 , C23C14/02 , C23C14/06 , C23C14/24 , C23C14/58 , C23C14/34
Abstract: 본발명은진공증착공정을이용하여나노구조체패턴을형성하기위한것으로서, 기재를준비하는제1단계와, 상기기재상부의일부영역을노출시키는마스크패턴층을형성하는제2단계와, 상기기재의노출된영역및 상기마스크패턴층상부에나노구조체의성장을위해필요한나노구조체의최소임계반지름을만족하는진공증착조건을설정하는제3단계와, 진공증착공정에의해상기기재의노출된영역및 상기마스크패턴층상부에나노구조체를성장시키는제4단계및 상기마스크패턴층을제거하여, 상기기재의노출된영역에나노구조체를형성하여상기기재상부에나노구조체패턴을형성하는제5단계;를포함하여이루어지되, 상기제1단계의기재의표면을소수성표면처리후 상기제2단계의마스크패턴층을형성하거나, 상기제2단계의마스크패턴층을형성한후에, 상기기재상부의노출된일부영역을소수성표면처리하는것을특징으로하는진공증착에의한나노구조체패턴형성방법및 이를이용한센서소자를기술적요지로한다. 이에의해본 발명은나노구조체의성장을위해필요한나노구조체의최소임계반지름을만족하는진공증착조건을설정하여진공증착공정을이용하여기재상부에나노구조체패턴을형성함으로써, 공정이간단하면서균일한나노구조체분포를가지는나노구조체패턴의형성이용이하며, 열처리공정이필요하지않아고온에취약한고분자기판과같은유연기판상에서의나노구조체패턴을형성할수 있고, 나노구조체의형태및 두께변형등을최소화함으로써고품질의소자를제공할수 있는이점이있다.
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Patent Agency Ranking
公开(公告)号：KR101548241B1
公开(公告)日：2015-08-28
申请号：KR1020130169387
申请日：2013-12-31
Applicant: (재)한국나노기술원
IPC: H01L21/20
Abstract: 본발명은반도체소자에관한것으로서,기판상에화합물반도체층이형성되는반도체소자의제조방법에있어서, 상기반도체소자에트렌치구조를형성하기위해패터닝된마스크를준비하는제1단계와, 상기화합물반도체층을상기패터닝된마스크를이용하여기판과화합물반도체층의계면까지에칭하여상기기판의표면이노출되도록하는제2단계와, 상기노출된기판을기판영역에서측면식각을이용하여상기기판과화합물반도체층의계면에서일정깊이로식각된 "凸" 형상의트렌치구조를형성하는제3단계를포함하여이루어지는것을특징으로하는트렌치구조를가진반도체소자의제조방법및 그에의한반도체소자를기술적요지로한다. 이에의해기판에트렌치구조를형성하여기판과화합물반도체층의계면에서일정깊이까지기판영역이제거된트렌치구조에의해기생경로를분리시킴으로반도체소자의항복전압을개선하는이점이있다.
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公开(公告)号：KR1020140081202A
公开(公告)日：2014-07-01
申请号：KR1020120150720
申请日：2012-12-21
Applicant: (재)한국나노기술원
CPC classification number: G03F7/0002 , B82Y30/00 , G03F7/11 , G03F7/2002 , H01L21/0274 , H01L21/288
Abstract: The present invention relates to a method for manufacturing a nano-patterned metal film. In terms of a method for manufacturing a nano-patterned metal film, the method for manufacturing a nano-patterned metal film using a nano-imprint lithography and a plating process comprises: a first step where a resin layer is formed on the upper layer of a substrate; a second step where nano-pattern is formed on the resin layer by an imprinting and a hardening process after locating a stamp for imprinting on the resin layer; a third step where a seed layer is vapour-deposited on the nano-patterned resin layer; a fourth step where a metal layer is formed on the seed layer by a plating process; and a fifth step where a nano-patterned metal film is produced by separating the seed and metal layers from the substrate after removing the resin layer. Hence, the present invention uses a nano-imprint lithography and a plating process which reduces cost and time for processing by simplifying the processes. Also, a nano-patterned metal film can simply be produced.
Abstract translation: 本发明涉及一种纳米图案化金属膜的制造方法。 关于纳米图案化金属膜的制造方法，使用纳米压印光刻法和电镀法制造纳米图案化金属膜的方法包括：第一步骤，在上层形成树脂层 底物; 第二步，其中在定影用于压印的印模在树脂层上之后通过压印和硬化处理在树脂层上形成纳米图案; 第三步骤，将种子层气相沉积在纳米图案化树脂层上; 第四步骤，通过电镀工艺在种子层上形成金属层; 以及第五步骤，其中通过在除去树脂层之后从晶片和金属层中分离晶种和金属层来制造纳米图案化的金属膜。 因此，本发明使用纳米压印光刻和电镀工艺，其通过简化工艺来降低处理的成本和时间。 此外，可以简单地制造纳米图案化金属膜。
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公开(公告)号：KR101335614B1
公开(公告)日：2013-12-02
申请号：KR1020120076381
申请日：2012-07-13
Applicant: (재)한국나노기술원
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/36 , H01L2933/0091
Abstract: The present invention relates to a vertical light emitting diode element and a manufacturing method thereof. The vertical light emitting diode element given in the present invention includes a conductive support layer; a light emitting structure which includes a p-type semiconductor layer , an active layer, and an n-type semiconductor layer of a bumpy structure which are formed on the conductive support layer in order; a p-type electrode which is formed to be electrically connected to the p-type semiconductor layer between the conductive support layer and the p-type semiconductor; and an n-type electrode which is formed on the n-type semiconductor layer. The bumpy structure of the n-type semiconductor layer under the n-type electrode is finer than the bumpy structure of the n-type semiconductor layer, which is not covered by the n-type electrode. By doing so, even if the thickness of the electrode is reduced, the characteristics can be maintained at the same or higher level compared to the existing case where the wiring resistance of a first electrode is formed on a big bump in the light emitting area.
Abstract translation: 本发明涉及垂直发光二极管元件及其制造方法。 本发明中给出的垂直发光二极管元件包括导电支撑层; 发光结构，其包括依次形成在导电支撑层上的p型半导体层，有源层和颠簸结构的n型半导体层; p型电极，形成为与导电性支持层和p型半导体之间的p型半导体层电连接; 以及形成在n型半导体层上的n型电极。 n型电极下面的n型半导体层的颠簸结构比n型半导体层的凹凸结构更细，n型半导体层未被n型电极覆盖。 通过这样做，即使电极的厚度减小，与在发光区域中的大凸块上形成第一电极的布线电阻的现有情况相比，也可以将特性维持在相同或更高的水平。
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公开(公告)号：KR101201262B1
公开(公告)日：2012-11-14
申请号：KR1020110049769
申请日：2011-05-25
Applicant: (재)한국나노기술원
CPC classification number: H04R31/003 , H04R1/02 , H04R19/04
Abstract: PURPOSE: A vibrating membrane and a back plate of a capacitance type microphone based on a MEMS(Micro Electro Mechanical System) and a method for manufacturing the same are provided to prevent oxidation due to external humidity by forming an insulating layer on the vibrating membrane and the back plate. CONSTITUTION: A first insulation layer is formed on the upper part of a substrate(101). A vibrating membrane(102) forms a second insulation layer on the top of a first metal layer. A sacrificial layer for an air gap is formed on the upper part of the vibrating membrane. An external surface of the sacrificial layer is patterned by a photolithography process. A third insulation layer is formed on the upper part of the patterned sacrificial layer. A second metal layer is formed on the upper part of the third insulation layer. An upper conductive line is formed on the patterned second metal layer. A fourth insulating layer is formed on the upper part of a second metal layer. A back plate is obtained by the photolithography process. A sound inlet hole and a vibration hole are formed.
Abstract translation: 目的：提供一种基于MEMS（微机电系统）的电容式麦克风的振动膜和背板及其制造方法，以通过在振动膜上形成绝缘层来防止由于外部湿气引起的氧化， 背板。 构成：在基板（101）的上部形成第一绝缘层。 振动膜（102）在第一金属层的顶部上形成第二绝缘层。 在振动膜的上部形成用于气隙的牺牲层。 通过光刻工艺对牺牲层的外表面进行图案化。 在图案化牺牲层的上部形成第三绝缘层。 在第三绝缘层的上部形成有第二金属层。 在图案化的第二金属层上形成上导电线。 在第二金属层的上部形成第四绝缘层。 通过光刻工艺获得背板。 形成声音入口孔和振动孔。
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公开(公告)号：KR101857647B1
公开(公告)日：2018-05-15
申请号：KR1020160095040
申请日：2016-07-26
Applicant: (재)한국나노기술원
Inventor： 박형호 , 황선용 , 이근우 , 임웅선 , 윤홍민 , 고유민 , 정해용 , 조주영 , 최재원 , 정상현 , 최영수 , 강성민 , 최원명 , 조영대 , 성호근 , 박경호 , 박원규
IPC: G03F7/20 , H01L21/027 , H01L29/06 , H01L29/41 , H01L21/203 , H01L21/306 , H01L21/02 , H01L21/324 , H01L21/033
Abstract: 본발명은진공증착공정을이용하여금속나노구조체패턴을형성하기위한것으로서, 기재상부의일부영역을노출시키는마스크패턴층을형성하는제1단계와, 상기기재의노출된영역및 상기마스크패턴층상부에금속나노구조체의성장을위해필요한금속나노구조체의최소임계반지름을만족하는진공증착조건을설정하는제2단계와, 진공증착공정에의해상기기재의노출된영역및 상기마스크패턴층상부에금속나노구조체를성장시키는제3단계와, 상기마스크패턴층을제거하여, 상기기재의노출된영역에금속나노구조체를형성하여상기기재상부에금속나노구조체패턴을형성하는제4단계및 상기금속나노구조체를이용하여상기기재의일부영역을습식식각하여하이브리드패턴을형성하는제5단계를포함하여이루어지는것을특징으로하는진공증착에의한하이브리드패턴형성방법을기술적요지로한다. 이에의해본 발명은금속나노구조체의성장을위해필요한금속나노구조체의최소임계반지름을만족하는진공증착조건을설정하여진공증착공정을이용하여기재상부에금속나노구조체패턴을형성하고이를이용하여기재를습식식각하여기재의일부영역에하이브리드패턴을제공하고자하는것이다.
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