81.
    发明专利
    未知

    公开(公告)号:FR2833411A1

    公开(公告)日:2003-06-13

    申请号:FR0115960

    申请日:2001-12-11

    Applicant: MEMSCAP

    Abstract: An electronic component is fabricated by: (a) incorporating an inductive microcomponent comprising stack(s) of layer of material (10a) having a low relative permittivity; (b) depositing an upper resin layer; (c) etching the resin layer to form channels defining the turns; (d) depositing a copper diffusion barrier layer; and (e) planarizing until the upper resin layer is revealed. Fabrication of an electronic component, incorporating an inductive microcomponent placed on top of a substrate and connected by a metal contact(s), comprises: (a) depositing on the substrate a stack(s) of layer of material having a low relative permittivity and a layer forming a hard mask (12a); (b) making an aperture in the hard mask layer placed in the upper position, vertically in line with the metal contacts; (c) etching the layers of material having a low relative permittivity and the subjacent hard mask layers down to the metal contact to form a via; (d) depositing a layer forming a copper diffusion barrier; (e) depositing a copper initiating layer; (f) depositing, electrolytically, a copper layer filling the via and covering the initiating layer; (g) planarizing the upper face until the upper hard mask layer is exposed; (h) depositing an upper resin layer formed from a material having a low relative permittivity; (i) etching the resin layer to form channels defining the turns of the inductive microcomponent and of possible other conductive features; (j) depositing a copper diffusion barrier layer; (k) depositing a copper initiating layer; (l) depositing electrolytically on the channels; and (m) planarizing until the upper resin layer is revealed.

    COMPOSANT MICROELECTOMECANIQUE
    83.
    发明专利

    公开(公告)号:CA2389820A1

    公开(公告)日:2003-01-02

    申请号:CA2389820

    申请日:2002-06-17

    Applicant: MEMSCAP

    Abstract: Composant microélectromécanique (1) assurant des fonctions de filtrage, réalisé sur un substrat à base de matériau semi-conducteur, et comportant de ux bornes d'entrée et deux bornes de sortie, caractérisé en ce qu'il comporte également : .cndot. un équipage mobile (4) relié au substrat par au moins une portion déformable, et incluant une région réalisée en un matériau ferromagnétique ; .cndot. un bobinage métallique (5) relié aux bornes d'entrée ou de sortie (3 0, 31), apte à interagir magnétiquement avec la région en matériau ferromagnétique de l'équipage mobile (4) ; .cndot. une surface formant une première électrode (6), reliée à une des bornes de sortie ou d'entrée, disposée en regard d'une surface complémentaire solidair e de l'équipage mobile (4), cette surface complémentaire formant une seconde électrode reliée à l'autre des bornes de sortie ou d'entrée, et étant apte à interagir électrostatiquement avec la première électrode (6).

    84.
    发明专利
    未知

    公开(公告)号:FR2817629A1

    公开(公告)日:2002-06-07

    申请号:FR0015625

    申请日:2000-12-01

    Applicant: MEMSCAP

    Abstract: The invention concerns a method for making an optical switch (1) comprising: an alignment structure (2) comprising several grooves (3, 4) produced on the surface (10) of a silicon-on-insulator substrate (9), each groove (3, 4) being designed to receive an optical fibre adapted to emit a light beam; a reflecting structure (6) adapted to move between two positions, namely: a reflecting position, wherein the reflecting structure (6) is designed to redirect the optical beam derived from a first optical fibre (45) towards a second optical fibre (46); a transmitting position, wherein the reflecting structure (6) is designed to enable the beam (45) of the first optical fibre (45) to continue its propagation in its initial direction. The invention is characterised in that it comprises two successive etching steps, namely: a step which consists in dry anisotropic etching of the substrate to define the general shape (17) of the reflecting structure (6); a subsequent wet etching step which enables both to define the final shape of the reflecting structure (6) and to define an alignment structure (2); an etching step carried out on the surface of the substrate opposite the reflecting structure, enabling to define the shape of deformable zones connecting the reflecting structure to the rest of the substrate; a final step which consists in eliminating the silicon dioxide layer enabling to release the reflecting structure.

    MICROCOMPOSANT DU TYPE MICRO-INDUCTANCE OU MICROTRANSFORMATEUR

    公开(公告)号:CA2357196A1

    公开(公告)日:2002-03-12

    申请号:CA2357196

    申请日:2001-09-11

    Applicant: MEMSCAP

    Inventor: FEDELI JEAN-MARC

    Abstract: Microcomposant inductif (1), tel que micro-inductance ou microtransformateur, comportant un bobinage métallique (2) ayant la forme d' un solénoïde, et un noyau magnétique (4) incluant un ruban en un matériau ferromagnétique, positionné au centre du solénoïde (2), caractérisé en ce qu e le noyau comporte au moins un ruban supplémentaire en un matériau ferromagnétique (13), séparé de l'autre ruban (12) par une couche de séparation (14) en un matériau amagnétique dont l'épaisseur est telle que les rubans (12,13) situés de part et d'autre de la couche de séparation (14) sont couplés antiferromagnétiquement.

    86.
    发明专利
    未知

    公开(公告)号:FR2811135A1

    公开(公告)日:2002-01-04

    申请号:FR0008413

    申请日:2000-06-29

    Applicant: MEMSCAP

    Abstract: Inductive microcomponent (1), such as a microinductor or microtransformer, comprising a metal winding (2) having the shape of a solenoid and a magnetic core (4) made of a ferromagnetic material positioned at the center of the solenoid (2), wherein the core (4) consists of several sections (13-16) separated by cutouts (17-19) oriented parallel to the main axis (20) of the solenoid (4).

    87.
    发明专利
    未知

    公开(公告)号:FR2808919A1

    公开(公告)日:2001-11-16

    申请号:FR0006142

    申请日:2000-05-15

    Applicant: MEMSCAP

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    88.
    发明专利
    未知

    公开(公告)号:FR2791470B1

    公开(公告)日:2001-06-01

    申请号:FR9903762

    申请日:1999-03-23

    Applicant: MEMSCAP

    Abstract: An IC (1), with a thick copper induction winding (20) located above a passivation layer (6) and having depending ends (12) connected to contact pads (5), is new. A new monolithic IC (1) has metallic contact pads (5), extending from flush with the upper surface (6) of a passivation layer (4) to an underlying semiconductor substrate layer (2), and an induction coil winding (20) which is located in a plane parallel to the passivation layer upper surface (6) and which consists of copper turns (21, 22, 23, 27, 28) of greater than 10 microns thickness, the winding ends (12) extending below the winding plane for connection to the contact pads (5). An Independent claim is also included for manufacturing a monolithic IC incorporating an inductive component by: (a) depositing a polyimide or benzocyclobutene layer on a semiconductor substrate (2) which is covered with a passivation layer (4) and which has metallic contact pads (5) extending from the passivation layer upper surface (6) to the substrate (2); (b) depositing a silica layer (16) on the polyimide or benzocyclobutene layer; (c) forming openings in the silica and polyimide or benzocyclobutene layers down to the contact pads (5); (d) applying a metal growth layer and a photosensitive resin layer on the structure; (e) exposing and developing the resin to form the lower face of the inductive component; (f) electrodepositing a copper layer on the exposed zones of the metal growth layer to form the inductive component strip; and (g) removing residues of the resin and the metal growth layer.

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