公开(公告)号：KR1020080048195A

公开(公告)日：2008-06-02

申请号：KR1020060118233

申请日：2006-11-28

Applicant: 삼성전자주식회사 ,  국민대학교산학협력단

Inventor： 배양호 ,  정창오 ,  김병범 ,  이재갑 ,  권태욱

IPC: G03F1/76 ,  G03F1/48

CPC classification number: H01L51/0021 ,  G03F7/0755 ,  G03F7/165 ,  H01L51/0023

Abstract: A method for forming a conductive polymer pattern is provided to improve the adhesive strength to an oxide layer and to enhance the precision of patterning. A method for forming a conductive polymer pattern comprises the steps of forming a self-assembly monolayer(30) on a substrate(10); patterning the self-assembly monolayer; forming a catalyst layer(60) on the self-assembly monolayer; and forming a conductive polymer layer on the self-assembly monolayer. Preferably an insulation layer(20) is formed between the substrate and the self-assembly monolayer. Preferably the conductive polymer layer is made of a polythiophene-based material or a polyaniline-based material.

Abstract translation: 提供形成导电聚合物图案的方法以改善对氧化物层的粘合强度并提高图案化的精度。 形成导电聚合物图案的方法包括以下步骤：在基底（10）上形成自组装单层（30）; 图案化自组装单层; 在所述自组装单层上形成催化剂层（60）; 并在自组装单层上形成导电聚合物层。 优选地，在衬底和自组装单层之间形成绝缘层（20）。 优选地，导电聚合物层由基于聚噻吩的材料或基于聚苯胺的材料制成。

公开(公告)号：KR100725251B1

公开(公告)日：2007-06-04

申请号：KR1020050034695

申请日：2005-04-26

Applicant: 국민대학교산학협력단

Inventor： 이재갑 ,  양희정 ,  이정길 ,  권태욱 ,  신현정 ,  성명모 ,  김지영

IPC: H01L29/786

Abstract: 본 발명은 마이크로 컨택 프린팅 방법에 의해 기판의 일부영역을 소수성 영역으로 표면개질을 실시한 후 저온에서 선택적인 증착방법으로 금속배선을 형성하고 이를 이용하여 TFT를 제작할 수 있는 단순화된 저온 선택 증착기술을 이용한 비광학적 방식의 금속배선과 그의 형성방법, 이를 이용하여 제조된 TFT와 TFT의 제조방법, 및 TFT 기판의 제조방법에 관한 것이다.
본 발명의 금속배선은 자기조립단분자막(SAMs)을 이용한 마이크로 컨택 프린팅 방법으로 표면의 선택적인 계면 처리를 통하여 자기조립단분자막을 패턴닝 한 후, ALD 또는 MOCVD 방법으로 처리된 표면위에 선택적으로 Co 및 Cu를 증착하여 금속배선 패턴을 형성한다. 본 발명은 저온 공정이 가능하여 증착면의 종류를 글래스, 실리콘, 플라스틱기판, 전도성 폴리머 등으로 다양화 할 수 있다.
금속배선, Co 선택 증착, 자기조립단분자막, 마이크로 컨택 프린팅, 저온증착, TFT, 유연기판

公开(公告)号：KR1020060112375A

公开(公告)日：2006-11-01

申请号：KR1020050034695

申请日：2005-04-26

Applicant: 국민대학교산학협력단

Inventor： 이재갑 ,  양희정 ,  이정길 ,  권태욱 ,  신현정 ,  성명모 ,  김지영

IPC: H01L29/786

CPC classification number: H01L21/28562 ,  H01L21/76817 ,  H01L21/76867 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

Abstract: A method for forming a metal interconnection is provided to guarantee a simplified process by forming a low-resistive multilayered thin film of a Cu/Co structure while using an ALD or MOCVD method of a Co thin film and a Cu thin film and a micro contact printing method. Metal is deposited on a substrate by a micro contact printing method wherein OTS(octadecyltrichlorosilane) of a second pattern made of a reverse pattern of a desired first pattern is formed. A Co thin film(24) is deposited on the front surface of the substrate. A Co thin film is selectively deposited only in a region where OTS(22a) is not formed, made of the same pattern as the first pattern. The substrate region of the first pattern in which the OTS is not formed is a hydrophilic region where a nucleus can easily be generated. The substrate region of the second pattern in which the OTS is formed is a hydrophobic region where a nucleus is difficult to generate.

Abstract translation: 提供一种用于形成金属互连的方法，以通过在使用Co薄膜和Cu薄膜和微触点的ALD或MOCVD方法的同时形成Cu / Co结构的低电阻多层薄膜来保证简化的工艺 打印方式。 金属通过微接触印刷法沉积在基底上，其中形成由所需第一图案的反向图案制成的第二图案的OTS（十八烷基三氯硅烷）。 Co基薄膜（24）沉积在衬底的前表面上。 仅在不形成OTS（22a）的区域中选择性地沉积Co薄膜，由与第一图案相同的图案制成。 不形成OTS的第一图案的基板区域是容易产生核的亲水区域。 其中形成OTS的第二图案的衬底区域是难以产生核的疏水区域。

公开(公告)号：KR101714613B1

公开(公告)日：2017-03-10

申请号：KR1020100106302

申请日：2010-10-28

Applicant: 삼성전자주식회사

Inventor： 임관용 ,  고정근 ,  강상범 ,  권의희 ,  이현정 ,  권태욱 ,  김석훈

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66659 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/6659 ,  H01L29/7835 ,  H01L29/7847

Abstract: 본발명은누설전류가감소되고채널전도성이향상된반도체소자및 이의제조방법을제공한다. 본발명의반도체소자의제조방법은, 기판상에게이트패턴을형성하는단계, 상기게이트패턴의일 측의기판상에마스크를형성하는단계, 상기기판내에불순물을주입하여비정질화영역을형성하고상기마스크를제거하는단계, 및상기기판상에상기게이트패턴을덮도록스트레스라이너를형성하고상기비정질화영역을결정화시켜재결정화영역을형성하는단계를포함한다.

Abstract translation: 半导体器件形成有形成在衬底上的栅极图案，以及在栅极图案一侧的衬底中具有层叠缺陷缺陷的再结晶区域。 半导体器件可以具有减小的漏电流和改善的沟道导电性。

公开(公告)号：KR1020120013747A

公开(公告)日：2012-02-15

申请号：KR1020100075943

申请日：2010-08-06

Applicant: 삼성전자주식회사

Inventor： 임관용 ,  고정근 ,  이현정 ,  권태욱 ,  김석훈 ,  차태호

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L21/823412 ,  H01L21/823807 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7847 ,  H01L21/823418 ,  H01L21/823814

Abstract: PURPOSE: A strained semiconductor device manufacturing method is provided to effectively transfer stress on a substrate from a stress film by not arranging a thick etching stopping film on the substrate. CONSTITUTION: A gate structure(130) is arranged on a substrate(100). A gate insulating film(110) and a gate electrode(120) are included in the gate structure. A diffusion barrier film(160) is arranged on the substrate and the gate structure. A stress film is formed on the diffusion barrier film using metal nitride or oxide materials. The stress film is formed into a tensile stress film(170a) by heat-treating the substrate.

Abstract translation: 目的：提供应变半导体器件制造方法，通过在衬底上不设置厚的蚀刻停止膜来有效地将应力从应力膜传递到衬底上。 构成：栅极结构（130）布置在衬底（100）上。 栅极结构中包括栅极绝缘膜（110）和栅电极（120）。 扩散阻挡膜（160）布置在衬底和栅极结构上。 使用金属氮化物或氧化物材料在扩散阻挡膜上形成应力膜。 通过热处理基板将应力膜形成为拉伸应力膜（170a）。

公开(公告)号：KR1020130108924A

公开(公告)日：2013-10-07

申请号：KR1020120030771

申请日：2012-03-26

Applicant: 삼성전자주식회사

Inventor： 권태욱 ,  강영진

IPC: H01Q1/12 ,  H04B1/38

CPC classification number: H01Q1/50 ,  H01Q1/10 ,  H01Q1/244

Abstract: PURPOSE: An antenna bushing in a portable terminal makes the length of an antenna exposed to the outside of the terminal longer when the antenna is expanded by placing a starting point of the antenna at the top of the terminal, thereby improving the performance of the antenna. CONSTITUTION: A bushing hole (10) overlaps and is connected to a boss hole of a rear cover (22). A bushing connection part (13) connects an antenna bushing (100) to the rear cover. An antenna guide part (12) transmits a broadcast signal received through an antenna to a circuit signal part through a signal staring point (15) of the antenna. A signal contact point part (11) is connected to the antenna guide part and the bushing connection part. The signal staring point of the antenna and the signal contact point part are formed at adjacent positions.

Abstract translation: 目的：便携式终端中的天线衬套通过将天线的起点放置在终端顶部，使天线暴露于终端外部的长度更长，从而提高天线的性能 。 构成：衬套孔（10）重叠并连接到后盖（22）的凸台孔。 衬套连接部件（13）将天线衬套（100）连接到后盖。 天线引导部分（12）通过天线的信号起始点（15）将通过天线接收的广播信号发送到电路信号部分。 信号接触点部分（11）连接到天线引导部分和套管连接部分。 天线和信号接触点部分的信号起始点形成在相邻位置。

公开(公告)号：KR1020130040527A

公开(公告)日：2013-04-24

申请号：KR1020110105356

申请日：2011-10-14

Applicant: 삼성전자주식회사

Inventor： 권태욱 ,  김종민 ,  홍상호 ,  오양택 ,  이옥경

IPC: H04B1/38 ,  H04M1/02

CPC classification number: H01Q1/52 ,  H01Q1/243 ,  H01Q1/528

Abstract: PURPOSE: A portable terminal is provided to improve reception performance when implementing an LTE(Long Term Evolution) system. CONSTITUTION: A main circuit board(20) is included in a neighboring body. The main circuit board includes a connecting terminal. An antenna(30) is formed on the main circuit board. A module(40) is arranged around an antenna. A ground unit(50) is included in between the module and the neighboring body. The ground unit applies an electric current from the module to the neighboring body in order to transfer noise, which is transferred to the antenna, to the neighboring body.

Abstract translation: 目的：提供便携式终端，以在实施LTE（长期演进）系统时提高接收性能。 构成：主电路板（20）包含在相邻的主体中。 主电路板包括连接端子。 天线（30）形成在主电路板上。 模块（40）围绕天线布置。 地面单元（50）被包括在模块和相邻体之间。 地面单元将来自模块的电流施加到邻近的身体，以将传送到天线的噪声传送到邻近的身体。

公开(公告)号：KR101222388B1

公开(公告)日：2013-01-15

申请号：KR1020110105475

申请日：2011-10-14

Applicant: 삼성전자주식회사

Inventor： 김종민 ,  권태욱 ,  홍상호

IPC: H04B1/38 ,  H04M1/02 ,  H01Q1/24

CPC classification number: H05K1/0218 ,  G06F1/1698 ,  H05K1/189

Abstract: PURPOSE: Apparatus for antenna receiving sensitivity enhancement in a portable terminal is provided to improve antenna receiving sensitivity by grounding the touch pad part around an antenna to a body around the touch pad part. CONSTITUTION: A touch pad part(50) is arranged around an antenna. The touch pad part is placed on a display unit bracket(42). A current carrying part is arranged between the display unit bracket and the touch pad part. The current carrying part leads noise flowing in from the touch pad part to the display unit bracket. The current carrying part blocks noise flowing into the antenna.

Abstract translation: 目的：便携式终端中用于天线接收灵敏度增强的装置被提供以通过将天线周围的触摸板部分接地到触摸板部分周围的身体来提高天线接收灵敏度。 构成：触摸板部分（50）围绕天线布置。 触摸板部分放置在显示单元支架（42）上。 在显示单元支架和触摸板部分之间布置有载流部件。 当前携带部分导致从触摸板部分流向显示单元支架的噪声。 电流承载部件阻止噪声流入天线。

公开(公告)号：KR1020120044800A

公开(公告)日：2012-05-08

申请号：KR1020100106302

申请日：2010-10-28

Applicant: 삼성전자주식회사

Inventor： 임관용 ,  고정근 ,  강상범 ,  권의희 ,  이현정 ,  권태욱 ,  김석훈

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66659 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/6659 ,  H01L29/7835 ,  H01L29/7847 ,  H01L29/1025

Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve mobility of a carrier in a channel area by applying extensible stress or compressive stress in the channel area. CONSTITUTION: A gate pattern(120) is formed on a substrate(110). The gate pattern includes a gate insulation layer(121) and a gate electrode(122). A gate spacer(124) is formed on the sidewall of the gate pattern. The gate spacer includes a first spacer(124a) and a second spacer(124b). A re-crystallization area(130) is formed on the substrate around the gate pattern and includes a laminate defect.

Abstract translation: 目的：提供半导体器件及其制造方法，通过在沟道区域中施加可伸长的应力或压缩应力来改善载流子在沟道区域中的移动性。 构成：在衬底（110）上形成栅极图案（120）。 栅极图案包括栅极绝缘层（121）和栅极电极（122）。 栅极间隔物（124）形成在栅极图案的侧壁上。 栅极间隔件包括第一间隔物（124a）和第二间隔物（124b）。 在栅极图案周围的基板上形成再结晶区域（130），并且包括层叠体缺陷。

公开(公告)号：KR1020110129079A

公开(公告)日：2011-12-01

申请号：KR1020100048511

申请日：2010-05-25

Applicant: 삼성전자주식회사

Inventor： 김석훈 ,  지정근 ,  신수진 ,  이우성 ,  권태욱

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L27/11558 ,  H01L21/2807 ,  H01L21/28273 ,  H01L21/28556 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7881 ,  H01L21/265

Abstract: PURPOSE: A non-volatile memory device and a manufacturing thereof are provided to prevent silicon migration in forming a first control gate film by crystallizing first and second reserved silicon films which have different compositions. CONSTITUTION: In a non-volatile memory device and a manufacturing thereof, a semiconductor substrate(100) is formed into a single-crystal silicon. An element isolation pattern(110) is arranged inside a trench(101). A tunnel oxide layer pattern(120) is arranged in the top side of an active region which is defined by the element isolation pattern. The top side of the tunnel oxide layer pattern is lower than that of the element isolation pattern. A Floating gate pattern(200) is arranged on a first dielectric layer pattern.

Abstract translation: 目的：提供一种非易失性存储器件及其制造，以通过结晶具有不同组成的第一和第二预留硅膜来防止硅形成第一控制栅极膜的迁移。 构成：在非易失性存储器件及其制造中，半导体衬底（100）形成为单晶硅。 元件隔离图案（110）布置在沟槽（101）内。 隧道氧化物层图案（120）布置在由元件隔离图案限定的有源区域的顶侧。 隧道氧化物层图案的顶侧低于元件隔离图案的顶侧。 浮置栅极图案（200）布置在第一电介质层图案上。