Abstract:
An apparatus (10, 30, 40, 50) is provided that relates to nanotubes as radiation elements for antennas and phased arrays, and more particularly to a macro-sized RF antenna for mobile devices. The antenna comprises a plurality of nanostructures (16), e.g., carbon nanotubes, forming an antenna structure on a substrate (12), and a radio frequency signal apparatus formed within the substrate (12) and coupled to the plurality of nanostructures (16). The radiation element length of a nested multiwall nanotube (161) of an exemplary embodiment may be tuned to a desirable frequency by an electromagnetic force (163).
Abstract:
A measurement device (103) and method determines various metrics between a vehicle (101) and a ground surface (105) using a transmitter-antenna (109) for emitting energy including a portion directed down toward the ground surface. A receiving antenna (115) has a portion oriented facing toward the transmitter-antenna for receiving a portion of the emitting energy along a direct path (117), and a portion oriented facing downwardly toward the ground surface for receiving a portion of the emitting energy reflected from the ground surface along a reflected path (113). A decoder provides separate indications of forward (121) and sideward (123) velocity relative to motion of the vehicle along the ground surface. Furthermore, the decoder comprises means for determining vehicle height (125) dependent on a measured difference in path length, vehicle level (127), or front to rear tilt angle, dependent on polarization elliptical ratio changes, and road surface conditions (129) dependent on amplitude and phase changes that occur versus time.
Abstract:
A meso-scale MEMS device having a cantilevered beam (113) is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material (71) to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.
Abstract:
One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode (415) overlaying a first substrate layer (505) of the printed circuit structure, a crystallized dielectric oxide core (405) overlaying the first electrode, a second electrode (615) overlying the crystallized dielectric oxide core, and a high temperature anti-oxidant layer (220) disposed between and contacting the crystallized dielectric oxide core and at least one of the first and second electrodes. The crystallized dielectric oxide core has a thickness that is less than 1 micron and has a capacitance density greater than 1000 pF/mm2. The material and thickness are the same for each of the plurality of capacitors. The crystallized dielectric oxide core may be isolated from crystallized dielectric oxide cores of all other capacitors of the plurality of capacitors.
Abstract:
An embedded assembly (200) and method for fabricating the same is provided. The embedded assembly includes an organic substrate (102) and at least one movable element (104). The embedded assembly also includes at least one antenna element (106). The method includes providing (502) the organic substrate, and embedding (504) the at least one moveable element on the organic substrate. The method also includes embedding (506) the at least one antenna element on the organic substrate.
Abstract:
A first and second capacitor plate are provided (101 and 102). Each capacitor plate has an opening disposed therethrough with the second capacitor plate being disposed substantially opposite the first capacitor plate. A first electrically conductive path interface is then disposed (103) in one of these openings as is at least a second electrically conductive path interface (104).
Abstract:
A meso-scale MEMS device having a cantilevered beam (113) is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material (71) to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.
Abstract:
High quality epitaxial layers of monocrystalline materials (126) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (104) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Further, various shaped piezoelectric structures (132) having optical surfaces (134) may be disposed on the overlying monocrystalline layer for optical switching and controlled manipulation of light signals.