NANOSTRUCTURED TUNABLE ANTENNAS FOR COMMUNICATION DEVICES
    3.
    发明申请
    NANOSTRUCTURED TUNABLE ANTENNAS FOR COMMUNICATION DEVICES 审中-公开
    用于通信设备的NANOSTRUCTURED TUNNABLE ANTENNAS

    公开(公告)号:WO2007089992A2

    公开(公告)日:2007-08-09

    申请号:PCT/US2007060732

    申请日:2007-01-19

    CPC classification number: H01Q1/243 H01Q1/368 H01Q21/0075 H01Q21/0087

    Abstract: An apparatus (10, 30, 40, 50) is provided that relates to nanotubes as radiation elements for antennas and phased arrays, and more particularly to a macro-sized RF antenna for mobile devices. The antenna comprises a plurality of nanostructures (16), e.g., carbon nanotubes, forming an antenna structure on a substrate (12), and a radio frequency signal apparatus formed within the substrate (12) and coupled to the plurality of nanostructures (16). The radiation element length of a nested multiwall nanotube (161) of an exemplary embodiment may be tuned to a desirable frequency by an electromagnetic force (163).

    Abstract translation: 提供了一种涉及作为天线和相控阵列的辐射元件的纳米管的装置(10,30,40,50),更具体地涉及用于移动装置的宏尺寸RF天线。 该天线包括在衬底(12)上形成天线结构的多个纳米结构(例如碳纳米管)和形成在衬底(12)内并耦合到多个纳米结构(16)的射频信号装置, 。 示例性实施例的嵌套多壁管(161)的辐射元件长度可以通过电磁力(163)调谐到期望的频率。

    VEHICLE-GROUND SURFACE MEASUREMENT SYSTEM
    4.
    发明公开
    VEHICLE-GROUND SURFACE MEASUREMENT SYSTEM 失效
    测量系统的变量之间的车间与路面

    公开(公告)号:EP0776488A4

    公开(公告)日:1998-11-18

    申请号:EP96913961

    申请日:1996-05-07

    Applicant: MOTOROLA INC

    CPC classification number: G01S13/003 G01S7/024 G01S13/325 G01S13/60

    Abstract: A measurement device (103) and method determines various metrics between a vehicle (101) and a ground surface (105) using a transmitter-antenna (109) for emitting energy including a portion directed down toward the ground surface. A receiving antenna (115) has a portion oriented facing toward the transmitter-antenna for receiving a portion of the emitting energy along a direct path (117), and a portion oriented facing downwardly toward the ground surface for receiving a portion of the emitting energy reflected from the ground surface along a reflected path (113). A decoder provides separate indications of forward (121) and sideward (123) velocity relative to motion of the vehicle along the ground surface. Furthermore, the decoder comprises means for determining vehicle height (125) dependent on a measured difference in path length, vehicle level (127), or front to rear tilt angle, dependent on polarization elliptical ratio changes, and road surface conditions (129) dependent on amplitude and phase changes that occur versus time.

    EMBEDDED ASSEMBLY INCLUDING MOVEABLE ELEMENT AND ANTENNA ELEMENT
    7.
    发明申请
    EMBEDDED ASSEMBLY INCLUDING MOVEABLE ELEMENT AND ANTENNA ELEMENT 审中-公开
    嵌入式组件,包括移动元件和天线元件

    公开(公告)号:WO2007084811A3

    公开(公告)日:2008-12-04

    申请号:PCT/US2007060221

    申请日:2007-01-08

    Abstract: An embedded assembly (200) and method for fabricating the same is provided. The embedded assembly includes an organic substrate (102) and at least one movable element (104). The embedded assembly also includes at least one antenna element (106). The method includes providing (502) the organic substrate, and embedding (504) the at least one moveable element on the organic substrate. The method also includes embedding (506) the at least one antenna element on the organic substrate.

    Abstract translation: 提供一种嵌入式组件(200)及其制造方法。 嵌入式组件包括有机衬底(102)和至少一个可移动元件(104)。 嵌入式组件还包括至少一个天线元件(106)。 该方法包括提供(502)有机衬底,并将至少一个可移动元件嵌入(504)到有机衬底上。 该方法还包括将至少一个天线元件嵌入(506)到有机衬底上。

    MICRO ELECTRO-MECHANICAL SYSTEM METHOD
    9.
    发明申请
    MICRO ELECTRO-MECHANICAL SYSTEM METHOD 审中-公开
    微机电系统方法

    公开(公告)号:WO03092048B1

    公开(公告)日:2004-10-07

    申请号:PCT/US0308255

    申请日:2003-03-17

    Applicant: MOTOROLA INC

    CPC classification number: H01H59/0009 H01G5/16 H01H2001/0073 H01H2059/0054

    Abstract: A meso-scale MEMS device having a cantilevered beam (113) is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material (71) to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

    Abstract translation: 使用标准印刷线路板和高密度互连技术和实践形成具有悬臂梁(113)的中尺度MEMS器件。 梁包括至少一些聚合物材料(71)以构成其长度,并且在一些实施例中还包括导电材料作为其承载部件。 在不同的实施例中,梁被附接在靠近其端部或远离其端部的位置处。

    PIEZOELECTRIC STRUCTURES HAVING CONTROLLABLE OPTICAL SURFACES
    10.
    发明申请
    PIEZOELECTRIC STRUCTURES HAVING CONTROLLABLE OPTICAL SURFACES 审中-公开
    具有可控光学表面的压电结构

    公开(公告)号:WO03005100A3

    公开(公告)日:2003-10-02

    申请号:PCT/US0212913

    申请日:2002-04-24

    Applicant: MOTOROLA INC

    CPC classification number: G02B26/0858 H01L41/319

    Abstract: High quality epitaxial layers of monocrystalline materials (126) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (104) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Further, various shaped piezoelectric structures (132) having optical surfaces (134) may be disposed on the overlying monocrystalline layer for optical switching and controlled manipulation of light signals.

    Abstract translation: 通过形成用于生长单晶层的顺应性衬底,可以将单晶材料(126)的高质量外延层生长在覆盖单晶衬底(102),例如大硅晶片上。 容纳缓冲层(104)包括通过氧化硅的非晶界面层(108)与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外,顺应性衬底的形成可以包括利用表面活性剂增强的外延,将单晶硅外延生长到单晶氧化物上,以及Zintl相材料的外延生长。 此外,具有光学表面(134)的各种成形的压电结构(132)可以设置在上覆单晶层上,用于光信号的光学切换和受控操纵。

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