Abstract:
A thermocompression bonder is provided. The thermocompression bonder includes: a bond head including a heated bonding tool for bonding a semiconductor element to a substrate; and a flux application tool for applying a flux material to conductive contacts of the substrate prior to bonding of the semiconductor element to the substrate.
Abstract:
A packaging substrate includes a circuit board, a number of first conductive posts, and a number of second conductive posts. The circuit board includes a first base and a first conductive pattern layer formed on a first surface of the first base. The first conductive posts extend from and are electrically connected to the first conductive pattern layer. The second conductive posts extend from and are electrically connected to the first conductive pattern layer. The height of each of the second conductive posts is larger than that of each of the first conductive posts. A manufacturing method thereof is also provided.
Abstract:
[Theme] A compact and refined chip resistor, with which a plurality of types of required resistance values can be accommodated readily with the same design structure, was desired.[Solution Means] A chip resistor 10 is arranged to have a resistor network 14 on a substrate. The resistor network 14 includes a plurality of resistor bodies R arrayed in a matrix and having an equal resistance value. A plurality of types of resistance units are respectively arranged by one or a plurality of the resistor bodies R being connected electrically. The plurality of types of resistance units are connected in a predetermined mode using connection conductor films C and fuse films F. By selectively fusing a fuse film F, a resistance unit can be electrically incorporated into the resistor network 14 or electrically separated from the resistor network to make the resistance value of the resistor network 14 the required resistance value.
Abstract:
A package structure includes a selective-electroplating epoxy compound, a first patterned circuit layer, second patterned circuit layers, metal studs, contact pads and conductive vias. The selective-electroplating epoxy compound includes cavities, a first surface and a second surface. The cavities disposed on the first surface in array arrangement. The selective-electroplating epoxy compound is formed by combining non-conductive metal complex. The metal studs are disposed in the cavities respectively and protruded from the first surface. The first patterned circuit layer is directly disposed on the first surface. The selective-electroplating epoxy compound exposes a top surface of the patterned circuit layer. The top surface is lower than or coplanar with the first surface. The second patterned circuit layers are directly disposed on the second surface. The conductive vias are disposed at the selective-electroplating epoxy compound to electrically connect the second patterned circuit layers to the corresponding metal studs.
Abstract:
In a method for manufacturing a multilayer substrate for having a BGA-type component thereon, a conductive through hole for restricting a signal interference and a resist film are formed on the multilayer substrate, an occurrence of a fault caused by a residual of a resist in the conductive through hole is reduced. In the method for manufacturing the multilayer substrate for having the BGA-type component thereon, a step of forming the resist film includes an applying step of applying a photosensitive resist to an entirety of a front surface portion of a base. The applying step is performed while restricting the resist from entering the conductive through hole by supplying a high pressure air to a rear surface of the base to pass through the conductive through hole using an air supply mechanism.
Abstract:
A printed wiring board includes a first circuit board having a first surface and a second surface, and a second circuit board having a third surface and a fourth surface and having a mounting area on the third surface of the second circuit board. The first circuit board is laminated on the third surface of the second circuit board such that the first surface of the first circuit board is in contact with the third surface of the second circuit board, the first circuit board includes reinforcing material and has an opening portion exposing the mounting area of the second circuit board, and the first circuit board and the second circuit board are formed such that a ratio H1/h1 is in a range of from 0.75 to 2.4, where H1 represents a thickness of the first circuit board and h2 represents a thickness of the second circuit board.
Abstract:
An electric component assembly comprising a semiconductor component (1) and a carrier is specified, wherein the carrier contains a highly thermally conductive ceramic and is connected to a varistor body. Heat from the semiconductor component can be at least partially dissipated to the carrier (3) by means of the varistor body.
Abstract:
The various embodiments of the present invention provide a stress-relieving, second-level interconnect structure that is low-cost and accommodates TCE mismatch between low-TCE packages and PCBs. The various embodiments of the interconnect structure are reworkable and can be scaled to pitches from about 1 millimeter (mm) to about 150 micrometers (μm). The interconnect structure comprises a dielectric body element and at least one interconnection array that provides a conductive path between two electronic components. Each interconnection array comprises a plurality of wires that provide both conductivity and compliance to the overall interconnect structure. The versatility and scalability of the interconnect structure of the present invention make it a desirable structure to utilize in current two-dimensional and ever-evolving three-dimensional IC structures.
Abstract:
Dual interface modules, and methods for manufacturing the same, are described. A substrate layer is provided with at least one dual interface section. At least two first through-holes are formed in the substrate in each dual interface section. A first connection element is arranged in each first through-hole. Each first connection element is connected to a contact pad that is arranged on a first side of the substrate. Each first connection element is connected to a connection pad that is arranged on a second side of the substrate. At least one electronic element is arranged on the second side of the substrate in each dual interface section. Two second through-holes are formed in the substrate in each dual interface section. Two soldering pads with a first side and a second side are arranged on the second side of the substrate layer.
Abstract:
A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the die to be attached. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having narrow interconnect pads on electrically conductive traces in a die attach surface, in which the bumps are mated onto the narrow pads on the traces.