公开(公告)号：US09991089B2

公开(公告)日：2018-06-05

申请号：US15788338

申请日：2017-10-19

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Ingo Mueller ,  Nicole Rauwolf ,  Christof Riedesel ,  Thomas Kemen ,  Joerg Jacobi ,  Arne Thoma ,  Markus Doering ,  Dirk Zeidler ,  Juergen Kynast ,  Gerd Benner

IPC: H01J37/21 ,  H01J37/28 ,  H01J37/10

CPC classification number: H01J37/21 ,  H01J37/10 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/0492 ,  H01J2237/28 ,  H01J2237/31764 ,  H01J2237/31774

Abstract: A method for operating a multi-beam particle optical unit comprises includes providing a first setting of effects of particle-optical components, wherein a particle-optical imaging is characterizable by at least two parameters. The method also includes determining a matrix A, and determining a matrix S. The method further includes defining values of parameters which characterize a desired imaging, and providing a second setting of the effects of the components in such a way that the particle-optical imaging is characterizable by the parameters having the defined values.

公开(公告)号：US09978560B2

公开(公告)日：2018-05-22

申请号：US15199350

申请日：2016-06-30

Applicant: International Business Machines Corporation

Inventor： Marc Adam Bergendahl ,  James John Demarest ,  Christopher J. Penny ,  Roger Allen Quon ,  Christopher Joseph Waskiewicz

IPC: H01J37/26 ,  H01J37/28

CPC classification number: H01J37/261 ,  H01J37/28 ,  H01J2237/206 ,  H01J2237/2802 ,  H01J2237/3114

Abstract: A system for performing nano beam diffraction (NBD) analysis, includes a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample, a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample, and a strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data.

公开(公告)号：US20180130634A1

公开(公告)日：2018-05-10

申请号：US15620144

申请日：2017-06-12

Applicant: JEOL Ltd.

Inventor： Yukihito Kondo ,  Ryusuke Sagawa

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/28 ,  H01J37/09 ,  H01J37/04

CPC classification number: H01J37/22 ,  H01J37/045 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/2443 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/2449 ,  H01J2237/28 ,  H01J2237/2802 ,  H01J2237/2803

Abstract: There is provided an electron microscope capable of recording images in a shorter time. The electron microscope (100) includes: an illumination system (4) for illuminating a sample (S) with an electron beam; an imaging system (6) for focusing electrons transmitted through the sample (S); an electron deflector (24) for deflecting the electrons transmitted through the sample (S); an imager (28) having a photosensitive surface (29) for detecting the electrons transmitted through the sample (S), the imager (28) being operative to record focused images formed by the electrons transmitted through the sample (S); and a controller (30) for controlling the electron deflector (24) such that an active electron incident region (2) of the photosensitive surface (29) currently hit by the beam is varied in response to variations in illumination conditions of the illumination system (4).

公开(公告)号：US09966226B2

公开(公告)日：2018-05-08

申请号：US14728004

申请日：2015-06-02

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Atsushi Uemoto ,  Xin Man ,  Tatsuya Asahata

IPC: G01N23/225 ,  H01J37/304 ,  H01J37/26 ,  H01J37/30 ,  G01N23/22 ,  G01N23/04 ,  G01T1/36 ,  H01J37/28 ,  G01N1/32

CPC classification number: H01J37/265 ,  G01N1/32 ,  G01N23/04 ,  G01N23/2208 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2255 ,  G01T1/36 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/2611 ,  H01J2237/28 ,  H01J2237/2807 ,  H01J2237/2812 ,  H01J2237/30472 ,  H01J2237/30483 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A cross-section processing and observation method performed by a cross-section processing and observation apparatus comprises a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections. In a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material or of a non-specified material that is different from a pre-specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed.

公开(公告)号：US09952272B2

公开(公告)日：2018-04-24

申请号：US14958354

申请日：2015-12-03

Applicant: Nikhilesh Chawla ,  James E Mertens

Inventor： Nikhilesh Chawla ,  James E Mertens

IPC: G01N21/01 ,  G01R31/12 ,  H01J37/28 ,  H01J37/20 ,  G01R31/28

CPC classification number: G01R31/1218 ,  G01R31/2858 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/2008

Abstract: Systems and fixtures for mounting, under mechanical constraint, wire-like or fiber-like samples of a high aspect ratio and down to 100 micrometers in diameter are disclosed. A region of interest along the length of the sample resides between and beyond a mechanical constraint on either side, allowing access to the region of interest for a wide number of characterization probes. The fixture may provide electrical isolation between two retaining blocks by means of a dielectric support member. The design may achieve minimal thermal expansion along the length of the sample by the material selection for the dielectric support member. Electrical contact may be introduced to the sample through conductive constraints in the retaining blocks. The fixture may have a minimal size perpendicular to the length axis of the sample to facilitate high probe fluxes when a diverging probe is used. The fixture may provide high x-ray transparency between the retaining blocks. The systems and fixtures as described therefore may provide a means for performing electrical and thermal testing on samples, including but not limited to solder butt-joints, across multimodal in situ characterization and imaging techniques to analyze dynamic electromigration.

公开(公告)号：US09934938B2

公开(公告)日：2018-04-03

申请号：US14224164

申请日：2014-03-25

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Atsushi Uemoto ,  Xin Man ,  Tatsuya Asahata

IPC: H01J37/04 ,  H01J37/28 ,  H01J37/22 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/2255 ,  G01N2223/045 ,  H01J37/222 ,  H01J2237/226 ,  H01J2237/24585 ,  H01J2237/2804 ,  H01J2237/2806 ,  H01J2237/2807

Abstract: A focused ion beam apparatus includes a focused ion beam irradiation mechanism that forms first and second cross-sections in a sample. A first image generation unit generates respective first images, either reflected electron images or secondary electron images, of the first and second cross-sections, and a second image generation unit generates a second image that is an EDS image of the first cross-section. A control section generates a three-dimensional image of a specific composition present in the sample based on the first images and the second image.

公开(公告)号：US20180090296A1

公开(公告)日：2018-03-29

申请号：US15418946

申请日：2017-01-30

Applicant: KLA-Tencor Corporation

Inventor： Mark Allen Neil ,  Frank Laske

IPC: H01J37/20 ,  H01J37/244 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/20 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/20285 ,  H01J2237/2448 ,  H01J2237/2817

Abstract: Methods and systems for performing measurements of multiple die with an array of electron beam columns are presented herein. The wafer is scanned in a direction parallel to the die rows disposed on the wafer. The electron beam measurement columns are spatially separated in a column alignment direction. The wafer is scanned in a direction that is oriented at an oblique angle with respect to the column alignment direction such that each electron beam column measures the same row of die features on different die during the same wafer pass. The wafer is oriented with respect to the array of electron beam columns by rotating the wafer, rotating the electron beam columns, or both. In further aspects, each measurement beam is deflected to correct alignment errors between each column and the corresponding die row to be measured and to correct wafer positioning errors reported by the wafer positioning system.

公开(公告)号：US09922799B2

公开(公告)日：2018-03-20

申请号：US15213781

申请日：2016-07-19

Applicant: Hermes Microvision, Inc.

Inventor： Shuai Li ,  Weiming Ren ,  Xuedong Liu ,  Juying Dou ,  Xuerang Hu ,  Zhongwei Chen

IPC: H01J37/28 ,  H01J37/10 ,  H01J37/20 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/10 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/0453 ,  H01J2237/0492 ,  H01J2237/04924 ,  H01J2237/04926 ,  H01J2237/04928 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/1502 ,  H01J2237/2446 ,  H01J2237/2448 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

公开(公告)号：US09922796B1

公开(公告)日：2018-03-20

申请号：US15366455

申请日：2016-12-01

Applicant: APPLIED MATERIALS ISRAEL LTD. ,  Technische Universiteit Delft

Inventor： Jürgen Frosien ,  Pieter Kruit

IPC: H01J37/28 ,  H01J37/147 ,  H01J37/145 ,  H01J37/09 ,  H01J37/22

CPC classification number: H01J37/145 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/0453 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/2817

Abstract: A method for inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device having an optical axis. The method includes generating a primary charged particle beam; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; and correcting a field curvature of the charged particle beam device with a first and a second field curvature correction electrode. The method further includes applying a voltage to the first and to the second field curvature correction electrode. At least one of the field strength provided by the first and the second field curvature correction electrode varies in a plane perpendicular to the optical axis of the charged particle beam device. The method further includes focusing the primary charged particle beamlets on separate locations on the specimen with an objective lens.

公开(公告)号：US20180053627A1

公开(公告)日：2018-02-22

申请号：US15783054

申请日：2017-10-13

Applicant: Fibics Incorporated

Inventor： Michael William Phaneuf ,  Ken Guillaume Lagarec

IPC: H01J37/305 ,  H01J37/304

CPC classification number: H01J37/26 ,  G06T2207/10061 ,  H01J37/222 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3056 ,  H01J2237/226 ,  H01J2237/2811 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.