公开(公告)号：US20160068959A1

公开(公告)日：2016-03-10

申请号：US14845998

申请日：2015-09-04

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Mehmet Tugrul SAMIR ,  Nyi O. MYO ,  Aaron MILLER ,  Aaron Muir HUNTER ,  Errol Antonio C. SANCHEZ ,  Paul BRILLHART ,  Joseph M. RANISH ,  Kartik SHAH ,  Dennis L. DEMARS ,  Satheesh KUPPURAO

IPC: C23C16/48 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48 ,  C30B25/08 ,  C30B29/06 ,  C30B29/08 ,  C30B29/406 ,  C30B29/42 ,  F27D1/025 ,  F27D2003/0086 ,  H01L21/67115 ,  H01L21/6719

Abstract: Implementations described herein disclose epitaxial deposition chambers and components thereof. In one implementation, a chamber can include a substrate support positioned in a processing region, a radiant energy assembly comprising a plurality of radiant energy sources, a liner assembly having an upper liner and a lower liner, and a dome assembly positioned between the substrate support and the radiant energy assembly. The epitaxial deposition chambers described herein allow for processing of larger substrates, while maintaining throughput, reducing costs and providing a reliably uniform deposition product.

Abstract translation: 本文所述的实施方式公开了外延沉积室及其部件。 在一个实施方式中，室可以包括位于处理区域中的基板支撑件，包括多个辐射能源的辐射能组件，具有上衬垫和下衬垫的衬套组件，以及位于衬底支撑件 和辐射能组件。 本文所述的外延沉积室允许处理较大的基底，同时保持生产量，降低成本并提供可靠均匀的沉积产物。

公开(公告)号：US20230028054A1

公开(公告)日：2023-01-26

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Kartik SHAH ,  Hansel LO ,  Tobin KAUFMAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Erika HANSEN

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20210175115A1

公开(公告)日：2021-06-10

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20200270747A1

公开(公告)日：2020-08-27

申请号：US16791264

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC: C23C16/02 ,  C23C16/513 ,  C23C16/56 ,  C23C16/40

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20200219703A1

公开(公告)日：2020-07-09

申请号：US16823936

申请日：2020-03-19

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20200020511A1

公开(公告)日：2020-01-16

申请号：US16412109

申请日：2019-05-14

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Mats LARSSON ,  Kevin A. PAPKE ,  Rajasekhar PATIBANDLA ,  Sathyanarayana BINDIGANAVALE ,  Umesh M. KELKAR

IPC: H01J37/32 ,  C23C28/04

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

公开(公告)号：US20190032216A1

公开(公告)日：2019-01-31

申请号：US16049239

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC: C23C16/455

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20180366363A1

公开(公告)日：2018-12-20

申请号：US16109945

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20170175265A1

公开(公告)日：2017-06-22

申请号：US14974541

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Schubert S. CHU ,  Nyi O. MYO ,  Karthik RAMANATHAN ,  Richard O. COLLINS ,  Zhepeng CONG ,  Nitin PATHAK

IPC: C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4583 ,  C23C16/4581 ,  C23C16/4584 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68714 ,  H01L21/68735

Abstract: In one embodiment, a susceptor is provided and includes a first major surface opposing a second major surface, and a plurality of contact structures disposed on the first major surface, each of the contact structures being at least partially surrounded by one or more of a plurality of radially oriented grooves and an annular groove, wherein each of the plurality of contact structures includes a substrate contact surface, each of the substrate contact surfaces is between two parallel planes separated by a distance of 0.1 millimeters, and the substrate contact surfaces define a substrate receiving surface.

公开(公告)号：US20160215393A1

公开(公告)日：2016-07-28

申请号：US15000971

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Karthik RAMANATHAN ,  Kartik SHAH ,  Nyi O. MYO ,  Schubert S. CHU ,  Jeffrey TOBIN ,  Errol Antonio C. SANCHEZ ,  Palamurali GAJENDRA

IPC: C23C16/458

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.

Abstract translation: 本公开的实施例一般涉及用于半导体衬底的热处理的基座。 在一个实施例中，基座包括第一边缘，耦合到第一边缘并被第一边缘包围的内部区域，以及形成在内部区域上的一个或多个环形突起。 一个或多个环形突起可以在对应于在基底上形成谷的位置的位置处的内部区域上形成，并且一个或多个环形突起有助于减少或消除谷的形成。