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    METHOD AND SYSTEM FOR MANUFACTURING NANOSTRUCTURES
    11.
    发明申请
    METHOD AND SYSTEM FOR MANUFACTURING NANOSTRUCTURES 审中-公开
    制造纳米结构的方法和系统

    公开(公告)号：US20110303634A1

    公开(公告)日：2011-12-15

    申请号：US12992883

    申请日：2009-05-14

    Applicant: Massimo Tormen ,  Roberto Gotter ,  Mauro Prasciolu

    Inventor： Massimo Tormen ,  Roberto Gotter ,  Mauro Prasciolu

    IPC: B05D5/00 ,  C23F1/08 ,  B05C9/12 ,  B05C11/00 ,  B05D3/06 ,  C23F1/00

    CPC classification number: B05D5/00 ,  B33Y10/00 ,  B81C1/00031 ,  B81C2201/0159 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/042

    Abstract: A method and a system for manufacturing two-dimensional and three-dimensional nanostructures and nanodevices are described, wherein the formation of the nanostructure (of the nanodevice) on a target substrate is made, at a millimetric or super-millimetric distance from the substrate, by the deposition of material emitted in the form of an atomic/molecular beam having a selected pattern corresponding, at an enlarged scale, to the desired pattern of the nanostructure (nanodevice). The projection of the patterned beam through a diaphragm, associated with the substrate at a micrometric or sub-micrometric distance and having at least one shaped aperture of nanometric size, brings about the formation of a nanostructure pattern which is a convolution of the patterned beam with the diaphragm aperture.

    Abstract translation: 描述了用于制造二维和三维纳米结构和纳米器件的方法和系统，其中在目标衬底上形成纳米结构（在纳米器件上）以距离衬底的毫米或超毫米的距离形成， 通过以具有选定图案的原子/分子束的形式发射的材料以放大的方式沉积到纳米结构（纳米器件）的期望图案上。 图案化光束通过隔膜的投影，其与基底在微米或亚微米距离处相关联并且具有至少一个具有纳米尺寸的成形孔径，导致纳米结构图案的形成，其是图案化的光束与 光圈孔径。

    Direct incident beam lithography for patterning nanoparticles, and the articles formed thereby
    12.
    发明授权
    Direct incident beam lithography for patterning nanoparticles, and the articles formed thereby 失效
    用于图案化纳米颗粒的直接入射光刻，以及由此形成的制品

    公开(公告)号：US07846642B2

    公开(公告)日：2010-12-07

    申请号：US12193437

    申请日：2008-08-18

    Applicant: Yuval Ofir ,  Vincent Martin Rotello ,  Mark Thomas Tuominen ,  Qijun Xiao ,  Bappaditya Samanta

    Inventor： Yuval Ofir ,  Vincent Martin Rotello ,  Mark Thomas Tuominen ,  Qijun Xiao ,  Bappaditya Samanta

    IPC: G03F7/26 ,  G03F7/20

    CPC classification number: G03F7/0042 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00031 ,  B81C1/00126 ,  B81C2201/0159 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/2059 ,  Y10T428/24893

    Abstract: Disclosed herein is a method for generating a three-dimensional structure on a surface. The method comprises forming a layer comprising a plurality of nanoparticles on a surface; and exposing a portion of the layer to incident radiation having a defined pattern at a dosage effective to aggregate the nanoparticles in the exposed portion of the layer into a three-dimensional structure, wherein the three-dimensional structure has a shape defined by the pattern of the radiation and a height defined by the dosage of the incident radiation and a thickness of the nanoparticle layer. Alternatively, the method comprises forming a layer comprising a plurality of nanoparticles on a surface of a three-dimensional template; and exposing at least a portion of the layer to incident radiation at a dosage effective to aggregate the nanoparticles in the exposed portion of the layer into a three-dimensional structure that corresponds to the three-dimensional template.

    Abstract translation: 本文公开了一种用于在表面上产生三维结构的方法。 该方法包括在表面上形成包含多个纳米颗粒的层; 以及将所述层的一部分暴露于具有限定图案的入射辐射，其剂量有效地将所述层的暴露部分中的纳米颗粒聚集成三维结构，其中所述三维结构具有由 辐射和由入射辐射的剂量和纳米颗粒层的厚度限定的高度。 或者，该方法包括在三维模板的表面上形成包含多个纳米颗粒的层; 以及将所述层的至少一部分以有效将所述层的暴露部分中的纳米颗粒聚集成对应于所述三维模板的三维结构的剂量暴露于入射辐射。

    Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure
    14.
    发明授权
    Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure 有权
    用于在微电子或微机械结构的沟槽中制造荫罩的方法

    公开(公告)号：US07250336B2

    公开(公告)日：2007-07-31

    申请号：US11154943

    申请日：2005-06-17

    Applicant: Jörn Regul ,  Dietmar Temmler

    Inventor： Jörn Regul ,  Dietmar Temmler

    IPC: H01L21/8242

    CPC classification number: H01L21/26586 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00404 ,  B81C2201/0159 ,  H01L21/32139 ,  H01L27/10867 ,  Y10S438/944

    Abstract: The present invention provides a method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure, comprising the steps of: providing a trench in the microelectronic or micromechanical structure; providing a partial filling in the trench; providing a first liner mask layer on the partial filling; providing a sacrificial filling on the liner mask layer to completely fill the trench; shallow etching back of the sacrificial filling into the trench; forming a first mask on the top side of the sacrificial filling in the trench; removing a subregion of the sacrificial filling in the trench using the first mask; and optionally removing a subregion of the first liner mask layer below it on the partial filling, the remaining subregion of the sacrificial filling in the trench serving as a second mask.

    Abstract translation: 本发明提供了一种在微电子或微机械结构的沟槽中制造荫罩的方法，包括以下步骤：在微电子或微机械结构中提供沟槽; 提供在沟槽中的部分填充; 在部分填充上提供第一衬垫掩模层; 在衬垫掩模层上提供牺牲填充物以完全填充沟槽; 将蚀刻后的浅层刻蚀成沟槽; 在沟槽中的牺牲填充物的顶侧上形成第一掩模; 使用所述第一掩模去除所述沟槽中的牺牲填充的子区域; 并且可选地在部分填充上去除其下方的第一衬垫掩模层的子区域，在沟槽中牺牲填充的剩余子区域用作第二掩模。

    Method for manufacturing a patterned structure
    15.
    发明申请
    Method for manufacturing a patterned structure 失效
    图案化结构的制造方法

    公开(公告)号：US20060183309A1

    公开(公告)日：2006-08-17

    申请号：US10547798

    申请日：2004-03-04

    Applicant: Micha Asscher ,  Gabriel Kerner

    Inventor： Micha Asscher ,  Gabriel Kerner

    IPC: H01L21/44

    CPC classification number: G03F7/2051 ,  B23K2103/14 ,  B41M5/24 ,  B81C1/00031 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0159 ,  H01L21/0272 ,  H01L21/32131 ,  H01L21/76838 ,  H05K3/027 ,  H05K3/048

    Abstract: A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.

    Abstract translation: 提出了在衬底上形成材料的微观或纳米图案的方法。 该方法利用缓冲层辅助激光图案化（BLALP）。 在基板上形成分层结构，该分层结构是由要形成的图案限定的衬底的间隔开的区域的形式，每个区域包括弱物理缓冲层和待图案化的材料层 缓冲层顶部。 然后将热处理施加到层状结构以去除所述区域中的剩余缓冲层，从而由缓冲层辅助激光图案化形成在衬底上的所述材料的稳定图案。 该方法可以利用正光刻或负光刻。 可以通过经由用于光学光刻的标准掩模的单个均匀激光脉冲的照射来实现图案化。

    Systems and methods for three-dimensional lithography and nano-indentation
    16.
    发明申请
    Systems and methods for three-dimensional lithography and nano-indentation 审中-公开
    三维光刻和纳米压痕的系统和方法

    公开(公告)号：US20050257709A1

    公开(公告)日：2005-11-24

    申请号：US10699287

    申请日：2003-10-31

    Applicant: Tony Mule ,  Paul Kohl ,  Muhannad Bakir ,  Kevin Martin ,  James Meindl ,  Hiren Thacker

    Inventor： Tony Mule ,  Paul Kohl ,  Muhannad Bakir ,  Kevin Martin ,  James Meindl ,  Hiren Thacker

    IPC: B41F1/00 ,  B81C1/00 ,  G03F7/00

    CPC classification number: G03F7/00 ,  B81B2201/042 ,  B81B2201/047 ,  B81B2201/058 ,  B81B2203/0384 ,  B81C1/00119 ,  B81C2201/0108 ,  B81C2201/0152 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0015

    Abstract: Systems and methods for three dimensional lithography, nano-indentation, and combinations thereof are disclosed. One exemplary three dimensional lithography method, among others, includes: providing a substrate having at least one optical element, wherein the optical element is selected from a refractive element and a diffractive element; disposing a polymer layer on the substrate and the at least one optical element, wherein the polymer layer includes a polymer material selected from a positive-tone polymer material and a negative-tone polymer material; positioning a mask adjacent the polymer layer, wherein the mask does not cover at least one directly exposed portion of the polymer material directly overlaying the at least one element; and exposing the at least one directly exposed portion of the polymer material to optical energy, wherein the optical energy passes through the at least one directly exposed portion of the polymer material and interacts with the element, and the element redirects the optical energy through the polymer material forming at least one area of indirectly exposed polymer material.

    Abstract translation: 公开了用于三维光刻，纳米压痕及其组合的系统和方法。 一种示例性的三维光刻方法，其中包括：提供具有至少一个光学元件的衬底，其中所述光学元件选自折射元件和衍射元件; 在所述基板和所述至少一个光学元件上设置聚合物层，其中所述聚合物层包括选自正性聚合物材料和负性聚合物材料的聚合物材料; 将掩模定位在所述聚合物层附近，其中所述掩模不覆盖直接覆盖所述至少一个元件的聚合物材料的至少一个直接暴露部分; 并且将所述聚合物材料的至少一个直接暴露部分暴露于光能，其中所述光能通过所述聚合物材料的所述至少一个直接暴露部分并且与所述元件相互作用，并且所述元件将所述光能重定向通过所述聚合物 形成间接暴露的聚合物材料的至少一个区域的材料。

    Three dimensional microstructures and method of making
    17.
    发明授权
    Three dimensional microstructures and method of making 失效
    三维微结构及其制作方法

    公开(公告)号：US06861205B2

    公开(公告)日：2005-03-01

    申请号：US10072360

    申请日：2002-02-06

    Applicant: Lawrence E. Bowman ,  Glen C. Dunham

    Inventor： Lawrence E. Bowman ,  Glen C. Dunham

    IPC: B81C1/00 ,  G03F7/00

    CPC classification number: B81C99/0095 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0109 ,  B81C2201/0159

    Abstract: A method of forming complex three-dimensional microstructures wherein an external stimulus is applied to a first layer of a photosensitive material, thereby creating voids in the first layer, and any material present in those voids is removed. A sacrificial material is then provided within at least a portion of the voids. This sacrificial layer fills the voids, either in whole or in part, and enables a second layer of photosensitive material to be stacked upon the first, while still preserving the pattern formed in the first layer. Once the sacrificial layer has been applied, a second layer of photosensitive material may then be stacked onto the first. Successive layers of photosensitive material and sacrificial material may be added until a final, complex three-dimensional structure is created. The sacrificial material may then be removed with a solvent such as carbon dioxide.

    Abstract translation: 形成复合三维微结构的方法，其中将外部刺激施加到感光材料的第一层，从而在第一层中产生空隙，并且去除存在于那些空隙中的任何材料。 然后在空隙的至少一部分内提供牺牲材料。 该牺牲层全部或部分地填充空隙，并且使第二层感光材料首先堆叠在一起，同时仍然保留形成在第一层中的图案。 一旦施加了牺牲层，则可以将第二层感光材料层叠在第一层上。 可以加入感光材料和牺牲材料的连续层，直到产生最终的复杂三维结构。 然后可以用诸如二氧化碳的溶剂除去牺牲材料。

    Method for forming a structure
    19.
    发明授权
    Method for forming a structure 失效
    形成结构的方法

    公开(公告)号：US5926716A

    公开(公告)日：1999-07-20

    申请号：US829255

    申请日：1997-03-31

    Applicant: Dirk Tobben ,  Peter Weigand

    Inventor： Dirk Tobben ,  Peter Weigand

    IPC: H01L27/04 ,  B81B3/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

    CPC classification number: B81C1/00111 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91 ,  B81C2201/0109 ,  B81C2201/0159 ,  H01L28/88 ,  H01L28/92

    Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 .mu.m. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.

    Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱体，以在衬底表面的一部分上提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。

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