公开(公告)号：US20250101578A1

公开(公告)日：2025-03-27

申请号：US18975559

申请日：2024-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher R. Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Grace Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi ,  SeoYoung Lee

IPC: C23C16/34 ,  C23C16/40 ,  H10B41/20 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.

公开(公告)号：US20240087882A1

公开(公告)日：2024-03-14

申请号：US17941347

申请日：2022-09-09

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Hang Yu ,  Deenesh Padhi ,  Sung-Kwan Kang ,  Abdul Wahab Mohammed ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/0217 ,  C23C16/342 ,  C23C16/345 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32724 ,  H01J37/32844 ,  H01L21/02274 ,  H01L21/0228

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the one or more deposition precursors. The methods may include forming a silicon-containing material on the substrate. The methods may include providing a fluorine-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the silicon-containing material on the substrate with the fluorine-containing precursor to form a fluorine-treated silicon-containing material. The methods may include contacting the fluorine-treated silicon-containing material with plasma effluents of argon or diatomic nitrogen.

公开(公告)号：US20240038833A1

公开(公告)日：2024-02-01

申请号：US18222086

申请日：2023-07-14

Applicant: Applied Materials, Inc.

Inventor： Fredrick Fishburn ,  Tomohiko Kitajima ,  Qian Fu ,  Srinivas Guggilla ,  Hang Yu ,  Jun Feng ,  Shih Chung Chen ,  Lakmal C. Kalutarage ,  Jayden Potter ,  Karthik Janakiraman ,  Deenesh Padhi ,  Yifeng Zhou ,  Yufeng Jiang ,  Sung-Kwan Kang

IPC: H10B12/00

CPC classification number: H01L28/91 ,  H01L28/92 ,  H10B12/03 ,  H10B12/30

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

公开(公告)号：US11710631B2

公开(公告)日：2023-07-25

申请号：US17078793

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Yichuen Lin ,  Kevin Hsiao ,  Hang Yu ,  Deenesh Padhi ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505

CPC classification number: H01L21/0234 ,  C23C16/345 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.

公开(公告)号：US20220130661A1

公开(公告)日：2022-04-28

申请号：US17078793

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Yichuen Lin ,  Kevin Hsiao ,  Hang Yu ,  Deenesh Padhi ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505

Abstract: Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.

公开(公告)号：US11929278B2

公开(公告)日：2024-03-12

申请号：US17324495

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4583 ,  H01J37/32724 ,  H01J37/32091 ,  H01J37/32899 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

公开(公告)号：US20220384189A1

公开(公告)日：2022-12-01

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/34 ,  C23C16/50 ,  C23C16/458 ,  C23C16/04

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11276570B2

公开(公告)日：2022-03-15

申请号：US16935423

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Byung Kook Ahn ,  SeoYoung Lee ,  Hang Yu

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/50 ,  C23C16/34

Abstract: Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.

公开(公告)号：US20220068630A1

公开(公告)日：2022-03-03

申请号：US17009002

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/34

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US20220028680A1

公开(公告)日：2022-01-27

申请号：US16935423

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Byung Kook Ahn ,  SeoYoung Lee ,  Hang Yu

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/34 ,  C23C16/56

Abstract: Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.