公开(公告)号：US20180261727A1

公开(公告)日：2018-09-13

申请号：US15981855

申请日：2018-05-16

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/38 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L33/60

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

公开(公告)号：US10050183B2

公开(公告)日：2018-08-14

申请号：US15405323

申请日：2017-01-13

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yu-Feng Lin ,  Yi-Ru Huang

IPC: H01L33/48 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

公开(公告)号：US20180190887A1

公开(公告)日：2018-07-05

申请号：US15908779

申请日：2018-02-28

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54

CPC classification number: H01L33/60 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

Abstract: A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. The molding compound at least encapsulates the upper surface and the side surface, and exposes the first pad and the second pad. The transparent substrate is disposed above the upper surface of the light emitting device, and the molding compound is located between the transparent substrate and the light emitting device. The reflective layer directly covers the side surface of the light emitting device, wherein the molding compound encapsulates the reflective layer and exposes a bottom surface of the reflective layer.

公开(公告)号：US20160343910A1

公开(公告)日：2016-11-24

申请号：US15135584

申请日：2016-04-22

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

Abstract translation: 发光装置包括基板和第一发光单元。 第一发光单元设置在基板上，并且包括第一半导体层，第一发光层和第二半导体层。 第一半导体层设置在基板上。 第一发光层设置在第一半导体层和第二半导体层之间。 第二半导体层设置在第一发光层上。 第一半导体层具有第一侧壁和第二侧壁。 第一角度在衬底和第一侧壁之间。 第二角度在衬底和第二侧壁之间。 第一角度小于第二角度。

公开(公告)号：US20160276554A1

公开(公告)日：2016-09-22

申请号：US15168218

申请日：2016-05-30

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  H01L33/54

CPC classification number: H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

公开(公告)号：US20160247788A1

公开(公告)日：2016-08-25

申请号：US15045426

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Yi-Ru Huang ,  Chih-Ming Shen ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/54 ,  H01L33/58 ,  H01L33/00 ,  H01L33/20 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.

Abstract translation: 本发明涉及一种高压发光二极管（HV LED）及其制造方法。 在基板上形成串联，并联或串联并联的多个LED管芯。 LED芯片的一部分的第一半导体层的侧表面与衬底的侧表面对准，使得在LED管芯和衬底的边缘之间不保留露出衬底的空间，衬底的比例 被LED芯片覆盖的面积增加，即，每单位面积的发光面积增加，HV LED的光提取效率提高。

公开(公告)号：US20160240732A1

公开(公告)日：2016-08-18

申请号：US15045264

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L33/10

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract translation: 发光部件包括外延结构，粘合层，第一反射层，第二反射层，阻挡层，第一电极和第二电极。 外延结构包括衬底，第一半导体层，发光层和第二半导体层。 粘合剂层设置在外延结构的第二半导体层上。 第一反射层设置在粘合剂层上。 第二反射层设置在第一反射层上并延伸到粘合剂层上。 第二反射层的投影面积大于第一反射层的投影面积。 阻挡层设置在第二反射层上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。

公开(公告)号：US20160190390A1

公开(公告)日：2016-06-30

申请号：US15064578

申请日：2016-03-08

Applicant: Genesis Photonics Inc.

Inventor： Yun-Li Li ,  Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/20 ,  H01L33/58

Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

公开(公告)号：US20160104815A1

公开(公告)日：2016-04-14

申请号：US14877948

申请日：2015-10-08

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/22 ,  H01L33/48 ,  H01L33/38 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract translation: 提供了具有粗糙表面的薄膜倒装芯片发光二极管（LED）及其制造方法。 首先，提供在基板的表面上具有图案化结构的基板，并使表面粗糙化。 然后在表面上形成第一半导体层; 然后在第一半导体层上形成发光结构层; 然后在发光结构层上形成第二半导体层。 第一和第二半导体层具有相反的电特性。 然后分别在第一半导体层和第二半导体层上形成第一接触电极和第二接触电极。 最后，在第一接触电极和第二接触电极上形成子座，并且移除衬底以形成具有粗糙表面的薄膜倒装芯片LED。 这里，提高了薄膜倒装芯片LED的发光效率。

公开(公告)号：US09236542B1

公开(公告)日：2016-01-12

申请号：US14582207

申请日：2014-12-24

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/00 ,  H01L33/58 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56

Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first anti-reflection film arranged on the transparent light guide structure, wherein a thickness of the first anti-reflection film is an odd multiple of λ/4n, λ is a wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first anti-reflection film.

Abstract translation: 发光元件结构包括配置为发光的发光单元; 被配置为覆盖所述发光单元的封装单元; 布置在所述封装单元上的透明导光结构; 以及布置在所述透明导光结构上的第一防反射膜，其中所述第一抗反射膜的厚度为λ/ 4n的奇数倍，λ是从所述发光单元经过所述封装单元的光的波长 ，n为第一防反射膜的折射率。