公开(公告)号：US20160190390A1

公开(公告)日：2016-06-30

申请号：US15064578

申请日：2016-03-08

Applicant: Genesis Photonics Inc.

Inventor： Yun-Li Li ,  Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/20 ,  H01L33/58

Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

公开(公告)号：US09236542B1

公开(公告)日：2016-01-12

申请号：US14582207

申请日：2014-12-24

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/00 ,  H01L33/58 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56

Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first anti-reflection film arranged on the transparent light guide structure, wherein a thickness of the first anti-reflection film is an odd multiple of λ/4n, λ is a wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first anti-reflection film.

Abstract translation: 发光元件结构包括配置为发光的发光单元; 被配置为覆盖所述发光单元的封装单元; 布置在所述封装单元上的透明导光结构; 以及布置在所述透明导光结构上的第一防反射膜，其中所述第一抗反射膜的厚度为λ/ 4n的奇数倍，λ是从所述发光单元经过所述封装单元的光的波长 ，n为第一防反射膜的折射率。

公开(公告)号：US20150188014A1

公开(公告)日：2015-07-02

申请号：US14535333

申请日：2014-11-07

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

公开(公告)号：US20150102378A1

公开(公告)日：2015-04-16

申请号：US14513218

申请日：2014-10-14

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Shao-Ying Ting ,  Kuan-Yung Liao ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/50 ,  H01L33/52 ,  H01L33/60

Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.

Abstract translation: 发光二极管封装结构包括封装载体，导光部件和发光单元。 导光部件设置在封装载体上。 发光单元设置在相对远离封装载体的导光部件的上表面上。 导光部件的水平投影面积大于发光部件的水平投影面积。 发光单元适于发射光束，并且光束的一部分进入导光部件并从导光部件的上表面发射。 存在于光束与上表面的法线方向之间的夹角为0度〜75度。

公开(公告)号：US10784307B2

公开(公告)日：2020-09-22

申请号：US16564053

申请日：2019-09-09

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/20

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

公开(公告)号：US10580934B2

公开(公告)日：2020-03-03

申请号：US16195812

申请日：2018-11-19

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/06

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：US20200052159A1

公开(公告)日：2020-02-13

申请号：US16659548

申请日：2019-10-21

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/36

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

公开(公告)号：US20190131490A1

公开(公告)日：2019-05-02

申请号：US16231914

申请日：2018-12-24

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H05B33/08 ,  H01L25/075 ,  H01L33/62 ,  H01L33/64 ,  H01L33/48

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/005 ,  H01L33/08 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/507 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H05B33/0803 ,  H05B33/0806 ,  H05B33/0827 ,  H01L2924/00

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

公开(公告)号：US10177113B2

公开(公告)日：2019-01-08

申请号：US15680225

申请日：2017-08-18

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L21/683 ,  H01L21/78 ,  H01L27/15 ,  H01L33/06 ,  H01L33/60 ,  H01L23/00 ,  H01L25/075 ,  H01L33/62

Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

公开(公告)号：US10038121B2

公开(公告)日：2018-07-31

申请号：US15045279

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/38

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.